Engineering Conferences International
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Escaping patents using generative machine learning
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A growth selection system for the directed evolution of Sucrose Synthases
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Laboratory evolution of a fungal heme-thiolate enzyme promoting peroxidase or peroxygenase activity
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Pet recycling: From enzyme and process optimization to an industrial plant
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Engineering Hydroxylase and Ketoreductase Activity, Selectivity, and Stability for a Scalable Concise Synthesis of Belzutifan
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Novel enzymes from the biosynthetic pathways of anthraquinone-fused enediynes
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Discovery and engineering of nylon hydrolases for PA66 recycling
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A growth selection system for the directed evolution of amine-forming or converting enzymes
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Donor activation in boron and phosphorus implanted self-aligned bottom-gate Igzo Tfts
Get PDFSelf-aligned channel regions in thin-film transistors (TFTs) have advantages in reduced parasitic capacitance and stage delay, and a reduction in overhead real estate. A common method used to fabricate self-aligned a‑Si:H TFTs is to utilize a through-glass exposure of photoresist which is blocked by the opaque metal bottom-gate electrode [1,2]. This process does not require an additional photomask or lithographic alignment, and thus supports low production cost. Sputtered IGZO has been introduced into flat panel display product manufacturing, exhibiting a channel mobility of approximately an order of magnitude higher than a-Si:H. The working source/drain electrodes in IGZO TFTs can be direct metal contact regions to the IGZO, without the need for additional processes such as doping to render the IGZO conductive. Proper metallurgy and annealing processes can provide ohmic behavior with minimal series resistance, however this usually requires several microns of gate-to-source/drain overlap to ensure such behavior.
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