Engineering Conferences International
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    9271 research outputs found

    Vertical oxide semiconductor field-effect transistor with extremely low off-state current

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    Oxide semiconductor field-effect transistors (OSFETs) are actively developed for display applications. An OSFET exhibits a lower off-state current than a silicon FET and enables low-frequency driving. We developed the measurement method and revealed the OSFET exhibits an extremely low off-state current [1]. In addition, we discovered a c-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) which was unique crystal morphology [2]. A display with a backplane formed using CAAC-IGZO FETs achieves low power consumption owing to idling-stop driving that allows an extremely low refresh rate [3]. Please click Download on the upper right corner to see the full abstract

    Invited; Solid-phase crystallization of hydrogen-doped indium oxide for low temperature processed TFTs

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    An amorphous In–Ga–Zn–O (IGZO) has attracted particular attention for thin-film transistor (TFT) applications owing to its high field effect mobility (μFE) of more than 10 cm2V−1s−1, steep subthreshold swing, extremely low leakage current, large-area uniformity, and good bias stress stability. Although the μFE of an IGZO TFT is over one order of magnitude higher than that of an amorphous Si TFT, further improvement of the μFE of oxide TFTs is required to expand their range of applications for both the displays and LSIs. An indium oxide (InOx) is known as a potential material for enhancing the μFE of oxide TFTs. However, undoped InOx exhibit a high background carrier density of over 1020 cm-3, making them unsuitable for a channel material of the TFTs. Please click Download on the upper right corner to see the full abstract

    Invited; An overview of the three-dimensionally stacked dynamic random access memory

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    As the DRAM scaling proceeds, challenges related to device integration are becoming overwhelming. The challenges include securing the cell transistor performance, cell capacitance, and low wire resistance. The current two-dimensional integration will meet a significant barrier for further device integration near the design rule of ~ 10nm, which will happen within the next ten years. The die-stacking technology, making the highbandwidth memory, is an alternative approach but lacks cost-competitiveness. Therefore, cell-stacking technology will be needed for the higher-density DRAM fabrication up to tera-bit, which has been implemented in the vertical-NAND flash. However, DRAM requires a much higher cell transistor performance than the NAND flash, where the polycrystalline Si could meet cell transistor requirements. Please click Download on the upper right corner to see the full abstract

    Formation and luminescence studies of Ge/Si core-shell quantum dots

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    Si-based quantum dots (QDs) have attracted much attention as an active element in Si-based optoelectronic applications because their light emission properties due to carrier confinement have the potential to combine photonic processing with electronic processing on a single chip. We have focused on CVD formation and characterization of Si-QDs with Ge core and reported their photoluminescence (PL) properties attributable to type II energy-band alignment between the Ge–core and the Si-shell [1-2]. In addition, we have also demonstrated stable electroluminescence in the near–infrared region from diode structures having a 3-fold stacked Si-QDs with Ge core with an areal dot density of ~2.0×1011 cm−2 under pulsed bias applications [3]. To gain fundamental knowledge and better understanding of the PL properties and to enhance the radiative recombination rate in photoexcited QDs, it would be effective to increase electronic states assisting radiative transition with impurity doping into the QDs and to reduce or not to increase in non-radiative centers if any. Please click Download on the upper right corner to see the full abstract

    Chemical Speciation of constituents in pyrolytic liquid from cassava harvest residues by APPI-Orbitrap MS

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    On-line Photoionisation Mass Spectrometry: an Interesting Technique to Study Biomass Pyrolysis

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    Functionalized Pyrolysis Products for High Value Chemical Production

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    Fast pyrolysis of contaminated biomass: The chemical and thermodynamic description of the intermediate liquid compound

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    A scalable single-use perfusion system: Are single-use bioreactors suitable & scalable?

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