75392 research outputs found
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Zastosowanie układów reprogramowalnych do realizacji wydajnego systemu przeciwdziałania włamaniom
No full textscore: 4collation: 152-15
A scheme for cooperative optimization of flows on inter-domain links
No full textscore: 3collation: 83-9
An Efficient Nonlinear Predictive Control Algorithm with Neural Models and Its Application to a High-Purity Distillation Process
No full textscore: 0collation: 76-8
Nonlinear model of light generation in one-dimensional photonic crystal F-P laser
No full textabstractEN: We present an analysis of above threshold laser generation in F-P laser having 1D Photonic Crystal active medium. Our approach is based on matrix approach including gain saturation effect.score: 0collation: 19-2
Study of resonant tunneling of electrons in the silicon MOS transistor structure
No full textscore: 3collation: 397-40
Study of frequency conversion process of two optically transmitted signals to P-I-N photodiodes
No full textscore: 4collation: 878-88
Fluorine-doped SiO2 and CF low-k dielectrics obtained during RIE process in fluorine plasmas
No full textscore: 20collation: 1040-104
Reactive-ion-etching (RIE) process in CF4 plasma as a method of fluorine implantation
No full textabstractEN: We have investigated the concentration of fluorine in a newly formed film, which is located on the etched surface during modification of thermal silicon dioxide layer in reactive-ion-etching (RIE) system in CF4 plasma. We try to find the correlation between parameters of the RIE process, depth and concentration of implanted fluorine ions, and finally, the thermal stability of fluorine ions incorporated into etched layer.During the RIE of silicon dioxide in fluorine plasma, on the etched surface a layer containing fluorine atoms is formed. This layer is very thin (about 1.5 nm) and has high concentration of fluorine ions. This concentration can be changed with r.f. power, CF4 gas pressure and CF4 flow. The suitable selection of etching parameters makes inspection of concentration and of the depth of fluorine ions incorporated into silicon possible, during the etching process. Unfortunately, ultra-shallow junction formed in this way does not show resistance to high temperature. So it is recommended only for low-budget technologies.score: 20collation: 1046-105
