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    1531 research outputs found

    Why e-money still fails

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    Was dem EWS geschehen ist

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    DVD/R 16x high quality mass production - Vortrag auf der Conference Replication Expo, September 2005, Shanghai, China

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    Vortrag auf der Conference Replication Expo September 2005, Shanghai, Chin

    RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells - the influence of InGaAs cap layers

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    A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined

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