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Zwischen Faden und Fassade : Ökologische Transformation des Bestands der historischen Baumwollspinnerei Gronau (BSG) : [Wintersemester 2024/2025]
No full textPreußenstadion : Erweiterung und Modernisierung der traditionsreichen Spielstätte des SC Preußen Münster an der Hammer Straße : [Wintersemester 2024/2025]
No full textVerzerrungen durch (generative) Künstliche Intelligenz im Gesundheitswesen veranschaulichen
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Database Analysis of Application Areas and Global Trends in Ketogenic Diets from 2019 to 2024
Full text linkTrinkwasser – Gesund und appetitlich!? Münsters Wissenschaftsfestival SchlauRaum, Wieso? Weshalb? Gesund?, 7. Juli 2025, Münster
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Secondary Ion Mass Spectrometry Study of Hydrogenated Amorphous Silicon Layer Disintegration upon Rapid (Laser) Annealing
No full textDouble layers of deuterated and hydrogenated amorphous silicon (a-Si:H) on glass are heated in the ambient by scanning with a green (532 nm) continuous wave laser. The hydrogen diffusion length in the laser spot is obtained from the deuterium (D)–hydrogen (H) interdiffusion measured by secondary ion mass spectrometry (SIMS), the temperature in the laser spot is obtained by calculation. Under certain conditions, detachment of the deuterated layer from the hydrogenated layer is observed in the SIMS depth profiles, visible by rising oxygen and carbon signals at the D/H interface attributed to in-diffusion of atmospheric gas species like water vapor, oxygen, and carbon oxide. Stacks involving both undoped and boron-doped a-Si:H films show disintegration. The results suggest that the parameters leading to the disintegration effects are the presence of a plane of reduced material cohesion at the D/H interface, a sizeable H diffusion length and a rather high heating rate. Herein, it is likely considered that the observed layer disintegration process is involved in the peeling of a-Si:H films upon fast heating. Furthermore, the results show that rapid laser heating can be used to detect planes of reduced material cohesion which may compromise the electronic properties of a-Si:H-based stacks