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Resource allocation decision-making in dementia care with and without budget constraints: a qualitative analysis
Additional file 4 of Succession of physiological stages hallmarks the transcriptomic response of the fungus Aspergillus niger to lignocellulose
Additional file 2 of Reduction of Salmonella contamination on the surface of chicken skin using bacteriophage
Additional file 1 of TWIST1 DNA methylation is a cell marker of airway and parenchymal lung fibroblasts that are differentially methylated in asthma
Interview with Diane Ravitch, 30 September 2019
N/AInterview obtained in connection with the PhD thesis of Graham Ashurst, entitled "A Contrarian in Search of Tradition: Post-War American Education and the Career of Diane Ravitch", designed to add value to the research by providing first-hand information from the subject of the thesis
Transcript of interview with Diane Ravitch, 30 September 2019
Transcript (omitting non-material content) of interview obtained in connection with the PhD thesis of Graham Ashurst, entitled "A Contrarian in Search of Tradition: Post-War American Education and the Career of Diane Ravitch", designed to add value to the research by providing first-hand information from the subject of the thesis
Supplementary questions to Diane Ravitch, with replies.
Supplementary questions to Diane Ravitch, with replies, following interview obtained in connection with the PhD thesis of Graham Ashurst, entitled "A Contrarian in Search of Tradition: Post-War American Education and the Career of Diane Ravitch", designed to add value to the research by providing first-hand information from the subject of the thesis
Direct band-gap crossover in epitaxial monolayer boron nitride
Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of monolayer boron nitride remain largely unexplored. In particular, the theoretically expected crossover to a direct-gap in the limit of the single monolayer is presently not
con rmed experimentally. Here, in contrast to the technique of exfoliating few-layer 2D hexagonal boron nitride, we exploit the scalable approach of high-temperature molecular beam epitaxy to grow high-quality monolayer boron nitride on graphite substrates. We combine deep-ultraviolet photoluminescence and reflectance spectroscopy with atomic force microscopy to reveal the presence
of a direct gap of energy 6.1 eV in the single atomic layers, thus conforming a crossover to direct gap in the monolayer limit. The giant exciton binding energy in monolayer boron nitride requires selective optical pumping through resonant excitation of phonons. These results on large area monolayer boron nitride demonstrate its potential within the family of van der Waals crystals for photonic and light-matter applications in the deep ultraviolet