IR@NEIST - North East Institute of Science and Technology (CSIR)
Not a member yet
    339 research outputs found

    Study of Au, Ni-(n)ZnSe thin film Schottky barrier junctions

    Get PDF
    Schottky barrier junctions of Al-doped n-type Zinc selenide (ZnSe) thin films of doping concentrations up to 9.7×1014cm−3 have been fabricated with Au and Ni electrodes on glass substrates by sequential thermal evaporation. All of the junctions of different doping concentrations exhibited rectifying current-voltage characteristics with a non-saturating reverse current. From the current-voltage characteristics, the different junction parameters such as ideality factor, saturation current density, series resistance, etc., were measured. Both types of junctions were found to possess a high ideality factor and a high series resistance. The barrier heights of the junctions were measured from Richardson plots and found to be around 0.8 eV. The structures were found to exhibit a poor photovoltaic effect with a fill factor not greater than 0.4. The diode quality as well as the photovoltaic performance of the diodes were improved following a short heat treatment in vacuum

    336

    full texts

    339

    metadata records
    Updated in last 30 days.
    IR@NEIST - North East Institute of Science and Technology (CSIR)
    Access Repository Dashboard
    Do you manage Open Research Online? Become a CORE Member to access insider analytics, issue reports and manage access to outputs from your repository in the CORE Repository Dashboard! 👇