IR@NEIST - North East Institute of Science and Technology (CSIR)
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High yield and quality silk fibre production by muga silkworm,Antheraea assama through application of plant growth promoting rhizobacteria
Alcohol oxidation in ionic liquid with USP and recyclable amberlite IR-120 acidic resin : a green approach
Amberlite IR-120 acidic resin, an age old polymer matrix,
plays a significant role as catalyst in the oxidation of aromatic
alcohols with urea 13hydrogen peroxide in ionic liquid at 70 �C
to disproportionate into phenols and carbonyl compounds in
30 1360 min following two pathways. Under similar condition
tertiary aromatic alcohol gave exclusively monohydroxyphenol
accompanied by acetone. However, aliphatic and alicyclic
alcohols yielded carbonyl compounds in moderate to good yields
in 1 135 h
Expedient method for oxidation of alcohol by hydrogen peroxide in the presence of amberlite IRA 400 resin (basic) as phase-transfer catalyst
Amberlite IRA 400 (strongly basic), a classical polymer imparts phasetransfer
catalysis in the oxidation of primary and secondary alcohols by hydrogen
peroxide to give excellent yields of the corresponding carbonyl compounds or carboxylic
acids in acetonitrile solvent at reflux temperature in 4–6 h. The catalytic
system is inert to other susceptible oxidation sites such as carbon–carbon double bond
Non-uniform, patchy stomatal closure of a plant is a strong determinant of plant growth under strassful situation
Morphological and biochemical characteristics of a cecidomyiid leaf gall of Machilus bombycina - a silkworm host plant,
Impact of submerged culture conditions on growth and bioactive metabolite produced by endophyte Hypocrea spp. NSF-08 isolated from Dillenia indica Linn. in North-East India
Effect of substrate temperature on structural properties of thermally evaporated ZnSe thin films
The ZnSe, a wide band gap semiconductor has high potential for application in optoelectronic applications. The structural
parameters of a thin film semiconductor largely depend on the preparation method and condition. Transparent ZnSe thin
films of thicknesses from 200