13 research outputs found
Study of electrical and radio frequency properties of structures (IIIA-N) for filter applications for GNSS receivers
No full text146 p. : ill. ; 30 cmSatellite positioning and navigation systems (GNSS) are among the fastest-growing technologies of the 21st century. They face new challenges such as improving receiver sensitivity, acquiring precise positions, reducing production costs, and lowering energy consumption. To meet these challenges, current research is focusing on the use of high-quality high-frequency devices. Unfortunately, interference in GNSS receivers can arise either from the mixing of spurious harmonics from adjacent transmitters or from intentional interference. Consequently, in most GNSS receivers, the application of filtering is essential and must be applied to the RF input. The study in question is based on the design of an RF filtering block for the GNSS receiver, consisting of two bandpass filters (BPFs) and a low-noise amplifier (LNA). The basic element of the low-noise amplifier is the transistor, which largely determines the performance of the final block. To meet current and future challenges, a substitute for the silicon-based transistor is being considered. To date, transistors based on compounds in class IIIA-N of the Mendeleyev table have been presented as the most promising for radio frequency applications, thanks to their exceptional physical and electrical characteristics. Different AlGaN/GaN MOSHEMT (Metal-Oxide-Semiconductor High Electron Mobility Transistor) structures were investigated in this thesis using the TCAD SILVACO software, and finally, the AlGaN/AlInGaN/GaN MOSHEMT on 4H-SiC substrate was chosen for implementation in the single-stage LNA circuit. To this end, we are interested in the design of two filtering block (BPF + LNA + BPF), which operate in the two spectral bands used by the GNSS system: [1190 MHz -1300 MHz] and [1550 MHz -1610 MHz] using the ADS simulator. The first frequency band corresponds to the L2-GPS and L2-GLONASS signals. The second corresponds to the L1-GPS, B1-COMPASS and E1-GALILEO signal
Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications
No full textIn this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric. The DC and RF characteristics of the proposed GaN MOS-HEMT structure are analyzed by using a TCAD Software. The device features are heavily doped (n++ GaN) source/drain regions for reducing the contact resistances and gate capacitances, which uplift the microwave characteristics of the MOS-HEMT. The enhancement-mode GaN MOS-HEMTs showed an outstanding performance with a threshold voltage of 1.07 V, maximum extrinsic transconductance of 1438 mS/mm, saturation current at VGS = 2 V of 1.5 A/mm, maximum current of 2.55 A/mm, unity-gain cut-off frequency of 524 GHz, and with a record maximum oscillation frequency of 758 GHz. The power performance characterized at 10 GHz to give an output power of 29.6 dBm, a power gain of 24.2 dB, and a power-added efficiency of 43.1%. Undoubtedly, these results place the device at the forefront for high power and millimeter wave applications. Keywords: Enhancement-mode, MOS-HEMT, High-k, TiO2, Regrown source/drain, TCA
RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga 2 O 3 as Dielectric Layer
No full textAbstract—In this research paper, a novel heterostructure AlGaN/GaN metal-oxide-semiconductor high electron mobility
transistor (MOSHEMT) is proposed, using an ultra-wide
bandgap Oxide Gallium (β-Ga2O3) as dielectric layer growth on
GaN substrate. The transfer and RF characteristics of the
developed device with a recessed T-gate are compared with a
conventional T-gate structure by using a two-dimensional (2D)
simulation of the TCAD Silvaco Software at 300 K. A positive
value of the threshold voltage VTH of 0.56 V and the highest peak
transconductance (Gm, max) of 1.15 S/μm were achieved for 2 nm
recess gate depth. A very small sub-threshold slope of 66mV/dec was reached. The microwave frequency performances of this device showed an outstanding result. The E-mode device exhibited a cut-off frequency (Ft) of 49 GHz, and a maximum
frequency (Fmax) of 60 GHz while the MOSHEMT with
conventional gate structure attained to only 38 GHz and 47 GHz
respectively. The simulation results make this improved AlGaN/GaN MOSHEMT using a β-Ga2O3 as a dielectric layer suitable for high-frequency electronic applications
RF performance analysis of conventional and recessed gate AlGaN/GaN MOSHEMT using β–Ga2O3 as dielectric layer
No full textIn this research paper, a novel heterostructure AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, using an ultra-wide bandgap Oxide Gallium(O−2Ga2O3) as dielectric layer growth on GaN substrate. The transfer and RF characteristics of the developed device with a recessed T-gate are compared with a conventional T-gate structure by using a two-dimensional (2D) simulation of the TCAD Silvaco Software at 300 K. A positive value of the threshold voltage V TH of 0.56 V and the highest peak transconductance (Gm,max) of 1.15 S/μm were achieved for 2 nm recess gate depth. A very small sub-threshold slope of 66mV/ dec was reached. The microwave frequency performances of this device showed an outstanding result. The E-mode device exhibited a cut-off frequency (Ft) of 49GHz, and a maximum frequency (Fmax) of 60GHz while the MOSHEMT with conventional gate structure attained to only 38GHz and 47GHz respectively. The simulation results make this improved AlGaN/GaN MOSHEMT using a β–Ga 2 O 3 as a dielectric layer suitable for high-frequency electronic application
Investigation of Temperature and Channel Dimension Effects on CMOS Circuit Performance
Get PDFThis paper presents the impact of temperature variations and alterations in transistor channel dimensions on CMOS (Complementary Metal-Oxide-Semiconductor) circuit technology. To facilitate this investigation, we first identified critical parameters characterizing the device's performance, which could exhibit susceptibility to these influences. The analysis encompassed critical metrics such as the transfer characteristic, drain current, logic levels, inflection points, and truncation points. These parameters enabled us to validate the results obtained from the PSPICE simulator, which demonstrated unequivocal effectiveness. Notably, our simulation results unveiled significant effects resulting from a wide temperature range spanning from -100°C to 270°C, offering valuable in-sights into thermal-induced failures. Additionally, the influence of channel dimension changes on factors like drain current and transfer characteristics, as well as temporal parameters including signal propagation delay and rise and fall times, were meticulously examined and appreciated
Numerical study of T-GATE AlGaN/AlInGaN/GaN moshemt with single and double barrier for THZ frequency applications
No full textThis paper presents a comprehensive investigation into the DC analog and AC microwave performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor) implemented on a 4H-SiC substrate. The study involves meticulous numerical simulations and an extensive comparison with a single barrier design, utilizing the TCAD-Silvaco software. The observed disparity in performance can be attributed to the utilization of double barrier technology, which enhances electron confinement and current density by augmenting the polarization-induced charge during high-frequency operations. Remarkably, when compared to the single barrier design, the double barrier MOSHEMT exhibits a notable 15% increase in drain current, a 5% increase in transconductance, and an elevated breakdown voltage (VBR) of 140 V in E-mode operation. Furthermore, the radio frequency analysis of the double barrier device showcases exceptional performance, setting new records with a maximum oscillation frequency (fmax) of 1.148 THz and a gain cutoff frequency (ft) of 891 GHz. These impressive results obtained through deck-simulation affirm the immense potential of the proposed double barrier AlGaN/AlInGaN/GaN MOSHEMT for future applications in high-power and terahertz frequency domains
Numerical study of 2DEG carrier density of quaternary AlInGaN-based T-gate MOSHEMT grown on UWBG-β-Ga2O3 substrate
No full textThis paper presents a numerical simulation study of an E-mode AlInGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) grown on an ultra-wide bandgap beta oxide gallium substrate (UWBG-β-Ga2O3) using the two-dimensional device simulator Silvaco-Atlas. The study investigates the influence of aluminum (x) and indium (y) concentrations and the downscaling of the AlxInyGazN barrier layer on various electrical characteristics, including polarization, 2D electron gas (2DEG) concentration, sheet charge density, threshold voltage, and Ion/Ioff ratio. The impact of introducing an AlN spacer layer is also examined. The results demonstrate that increasing the alloy composition and barrier thickness leads to significantly improved analog performance, accompanied by a reduction in the threshold voltage. Notably, an optimal 20nm-Al0.80In0.18Ga0.02N barrier grown over β-Ga2O3 substrate achieves a high 2DEG carrier density of 1.54 × 1013 cm-2, a positive threshold voltage of 1.09 V, and a higher Ion/Ioff ratio of around 5. 5 × 1012.The proposed numerical simulation model proves to be well-suited for the investigation of quaternary nitride-based MOSHEMTs grown on UWBG-β-Ga2O3 substrates, offering valuable insights prior to device manufacturing
Leveraging artificial intelligence for competitive advantage: a case study of Samsung
Get PDFThe author examines how it is possible to use artificial intelligence to the advantage of an organization that operates in the technology industry. The main focus of the research was to identify how effectively and in what ways Samsung used AI technologies in its smart phones and home appliance product segments to improve functionality and usability as well as operational effectiveness. This was to have been achieved through the use of Artificial Intelligence in manufacturing processes as well as in various ways to deliver unique customized services to customer unlike the rival companies. This work also shows how Bixby, Samsung’s own AI assistant or smart IoT solutions all help towards creating a smarter environment, thereby building goodwill for the brand and generating additional revenue streams. The study further shows how Samsung supports that the application of AI can enhance a firm’s competitive position by pushing product differentiation, monitoring and anticipating equipment wear and tear and making better decisions from analyzed data
Stromal Claudin14-Heterozygosity, but Not Deletion, Increases Tumour Blood Leakage without Affecting Tumour Growth
No full textPMCID: PMC3652830This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited
