402 research outputs found
Supplemental material for A Data-Driven Test for Cross-Cultural Differences in Face Preferences
No full textSupplemental Material for A Data-Driven Test for Cross-Cultural Differences in Face Preferences by Lingshan Zhang, Iris J. Holzleitner, Anthony J. Lee, Hongyi Wang School of Psychology and Cognitive Science, East China Normal University, Shanghai, China Chengyang Han, Vanessa Fasolt, Lisa M. DeBruine and Benedict C. Jones in Perception</p
Synthesis and Electrical Behavior Of Vo2Thin Films Grown on Srruo3 Electrode Layers
No full textOwing to the fascinating metal-insulator transition, VO2 has attracted significant research interest in terms of material physics, synthesis, and device applications. Upon heating above ~340 K, VO2 undergoes an abrupt insulator-metal transition showing several orders of resistivity drop, as well as a change in the crystal structure. Electric-field induced metal-insulator transition of VO2 is of particular interest for its potential applications in emerging electronic device paradigms. Previous studies on planar-type VO2 devices fabricated on sapphire or similar insulating substrates revealed that an electric field on the order of 105 - 106 V/cm is required to trigger the electric-field induced metal-insulator transition. Therefore, a short gap between electrodes is essential to realize switching under low voltage bias. Growing VO2thin films on conductive layers is a promising approach that is expected to reduce the voltage required for switching in vertical devices and is of interest to cross-bar type memory and neuromorphic devices.In this study, VO2 films were grown on conducting oxide SrRuO3 layers. Apart from applications in magnetism, SrRuO3 is a widely studied template material to create multi-functional oxide heterostructures. Here, SrRuO3 buffered SrTiO3 (111) and Si/SiO2 were selected as platforms for VO2 growth. The properties of VO2 thin films grown on SrRuO3 buffer layers, as well as thermally and electric-field induced metal-insulator transition were systematically studied. Numerous growth experiments were conducted to identify the optimal growth conditions. Utilizing the current shunting associated with the conductive underlayer, electric-field induced metalinsulator transition was investigated in both the in-plane and out-of-plane configurations. A distributed resistance network with general applicability to understanding metal-insulator transitions is proposed to predict the electrical behavior of VO2grown on conducting layers
Political connections and corporate overinvestment: evidence from Chinese A-Share listed companies
No full textFull text is available to authenticated members of The University of Auckland only.This thesis examines the overinvestment issue of politically connected firms in China. Using a sample of Chinese A-share listed companies during the period from 2008 to 2013, the thesis shows that in general, firms with political connections at the top managerial level (CEO or CFO) overinvest compared to firms with no such connection. Specifically, by constructing a detailed set of political connection variables, I find that this phenomenon is primarily exhibited in the private firms with connections (at top managerial level) in central-type government with high-level political status. It is also exhibited in state-owned firms’ connections (at top managerial level) in local-type government with low-level political status. However, firms with political connections on the board of directors and among management team members (managers other than CEO and CFO), do not show an overinvestment issue on average. The thesis also finds that the overinvestment behavior of the politically connected firms (at top managerial level) leads to a deterioration in firm performance in subsequent years. This coincides with the proposition that Chinese companies, especially private companies, seek political connections as a complement to underdeveloped formal institutions and market contracting. The cost of obtaining and maintaining these political ties is potentially channeled through corporate overinvestment. This thesis provides a rich foundation for understanding the nature of political connections, as well as the underlying incentives of each party in the political network in China
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Toward a Data-Type-Based Real Time Geospatial Data Stream Management System
Get PDFThe advent of sensory and communication technologies enables the generation and consumption of large volumes of streaming data. Many of these data streams are geo-referenced. Existing spatio-temporal databases and data stream management systems are not capable of handling real time queries on spatial extents. In this thesis, we investigated several fundamental research issues toward building a data-type-based real time geospatial data stream management system. The thesis makes contributions in the following areas: geo-stream data models, aggregation, window-based nearest neighbor operators, and query optimization strategies. The proposed geo-stream data model is based on second-order logic and multi-typed algebra. Both abstract and discrete data models are proposed and exemplified. I further propose two useful geo-stream operators, namely Region By and WNN, which abstract common aggregation and nearest neighbor queries as generalized data model constructs. Finally, I propose three query optimization algorithms based on spatial, temporal, and spatio-temporal constraints of geo-streams. I show the effectiveness of the data model through many query examples. The effectiveness and the efficiency of the algorithms are validated through extensive experiments on both synthetic and real data sets. This work established the fundamental building blocks toward a full-fledged geo-stream database management system and has potential impact in many applications such as hazard weather alerting and monitoring, traffic analysis, and environmental modeling
Synthesis and Electrical Behavior of VO2 Thin Films Grown on SrRuO3 Electrode Layers
No full text
In this study, VO2 films were grown on conducting oxide SrRuO3 layers. Apart from applications in magnetism, SrRuO3 is a widely studied template material to create multi-functional oxide heterostructures. Here, SrRuO3 buffered SrTiO3 (111) and Si/SiO2 were selected as platforms for VO2 growth. The properties of VO2 thin films grown on SrRuO3 buffer layers, as well as thermally and electric-field induced metal-insulator transition were systematically studied. Numerous growth experiments were conducted to identify the optimal growth conditions. Utilizing the current shunting associated with the conductive underlayer, electric-field induced metal-insulator transition was investigated in both the in-plane and out-of-plane configurations. A distributed resistance network with general applicability to understanding metal-insulator transitions is proposed to predict the electrical behavior of VO2 grown on conducting layers.</p
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