4,478 research outputs found
禮記
No full text孔穎達疏.綫裝.匡17.9 x 12.5 公分, 9行21字, 小字雙行同, 白口, 無魚尾, 左右雙邊, 版心下刻"汲古閣".Xian zhuang.Kuang 17.9 x 12.5 gong fen, 9 hang 21 zi, xiao zi shuang hang tong, bai kou, wu yu wei, zuo you shuang bian, ban xin xia ke"ji gu ge".Kong Yingda shu
書經
No full text孔頴達疏.綫裝.匡17.9 x 12.5 公分, 9行21字, 小字雙行同, 白口, 無魚尾, 左右雙邊, 版心下刻"汲古閣".Xian zhuang.Kuang 17.9 x 12.5 gong fen, 9 hang 21 zi, xiao zi shuang hang tong, bai kou, wu yu wei, zuo you shuang bian, ban xin xia ke "Ji gu ge".Kong Yingda shu
詩經
No full text孔頴達疏.綫裝.框17.9 x 12.5 公分, 9行21字, 小字雙行同, 白口, 無魚尾, 左右雙邊, 版心下刻"汲古閣".Xian zhuang.Kuang 17.9 x 12.5 gong fen, 9 hang 21 zi, xiao zi shuang hang tong, bai kou, wu yu wei, zuo you shuang bian, ban xin xia ke "Ji gu ge".Kong Yingda shu
Chun qiu Zuo zhuan zhu shu: [60 juan]. v.92
No full text杜氏[預]註 ; 孔頴達疏.綫裝.框17.9 x 12.5 公分, 9行21字, 小字雙行同, 白口, 無魚尾, 左右雙邊, 版心下刻"汲古閣".Xian zhuang.Kuang 17.9 x 12.5 gong fen, 9 hang 21 zi, xiao zi shuang hang tong, bai kou, wu yu wei, zuo you shuang bian, ban xin xia ke"ji gu ge".Du shi [Yu] zhu ; Kong Yingda shu
易經
No full text王弼, 韓康伯注 ; 孔頴達正義.綫裝.《周易兼義》卷一至六卷端題"魏王弼注 ; 唐孔穎達正義", 卷七至九題"晉韓康伯注 ; 唐孔穎達正義".匡17.9 x 12.5 公分, 9行21字, 小字雙行同, 白口, 無魚尾, 左右雙邊, 版心下刻"汲古閣".附: 陸德明釋文, 王弼周易畧例.Xian zhuang."Zhou yi jian yi" juan yi zhi liu juan duan ti "Wei Wang Bi zhu ; Tang Kong Yingda zheng yi", juan qi zhi jiu ti "Jin Han Kangbo zhu ; qi Tang Kong Yingda zheng yi".Kuang 17.9 x 12.5 gong fen, 9 hang 21 zi, xiao zi shuang xing tong, bai kou, wu yu wei, zuo you shuang bian, ban xin xia ke "Ji gu ge".Fu: Lu Deming shi wen, Wang Bi Zhou yi lü li.Wang Bi, Han Kangbo zhu ; Kong Yingda zheng yi
Ge1-ySny (y=0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties
No full textabstract: Novel hydride chemistries are employed to deposit light-emitting Ge [subscript 1- y] Sn [subscript y] alloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ≤ 0.06, the CVD precursors used were digermane Ge [subscript 2]H[subscript 6] and deuterated stannane SnD[subscript 4]. For y ≥ 0.06, the Ge precursor was changed to trigermane Ge [subscript 3]H[subscript 8], whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge [subscript 4]H[subscript 10] as the Ge source. The photoluminescence intensity from Ge [subscript 1− y] Sn [subscript y] /Ge films is expected to increase relative to Ge [subscript 1− y] Sn [subscript y] /Si due to the less defected interface with the virtual substrate. However, while Ge [subscript 1− y] Sn [subscript y] /Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge [subscript 1− y] Sn [subscript y] /Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge [subscript 1− y] Sn [subscript y] /Ge makes it possible to approach film thicknesses of about 1 μm, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge [subscript 1− y] Sn [subscript y] /Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si[subscript 1− x] Ge [subscript x] /Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 116, 13 (2014) and may be found at http://dx.doi.org/10.1063/1.489678
Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications
No full textabstract: The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10[superscript −5] A/cm[superscript 2] at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (Dit ) is estimated to be as low as ∼2 × 10[superscript 12] cm[superscript −2] eV[superscript −1] under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased Dit value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in JOURNAL OF APPLIED PHYSICS 117, 5 (2015) and may be found at http://dx.doi.org/10.1063/1.490695
OB00040 - Damodarpur Copper Plate 1 (GE 163) of Budhagupta
No full textDamodarpur Copper Plate 1 (GE 163) of Budhagupt
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