95 research outputs found
E-field induced keep-out zone determination method of through-silicon vias for 3-D ICs
An increase in the number of the through-silicon vies (TSVs) per unit area causes the electrical channel in neighboring semiconductor devices to be closer to the depletion region induced by the electric-field (E-field) around the TSV. A keep-out zone (KOZ) is required to ensure the proper operation of three-dimensional integrated circuits (3-D ICs) using TSVs given these negative effects. The proposed method with which to determine the KOZ for 3-D ICs includes procedures for extracting the charges produced during the TSV formation process and for calculating the depletion region from a nonlinear metal-oxide-semiconductor (MOS) capacitance model. The results of a comparison of the proposed method with a previous method show that the charge carriers in the depletion region and charge-type imperfections of in TSV must be considered for an accurate KOZ.
Dual Resonant Reactive Shield for Reducing the Electromagnetic Fields from Wireless Charging Electric Vehicle
A LCL-LCL Topology for Odd Harmonic Magnetic Fields Reduction in Over-Coupled WPT System
Electrolytic C-H Oxygenation via Oxidatively Induced Reductive Elimination in Rh Catalysis
© 2021 American Chemical Society.Herein, we describe the development of a Rh-catalyzed C-H acyloxylation under mild electrolytic conditions. Anodic oxidation of a key rhodacyclic carboxylate intermediate was found to enable the product-releasing C-O bond-forming reductive elimination process. An accumulation of carboxylate near the electrode surface was rationalized to further induce the desired C-O bond formation, allowing an ambient catalytic C-H oxygenation using stoichiometric amounts of readily accessible carboxylic acid coupling partners.11Nsciescopu
EMI Reduction Method in Wireless Power Transfer System with Increasing Efficiency using Frequency Split Phenomena
This paper describes a method to reduce magnetic field leakage from a Wireless Power Transfer (WPT) systems. By using frequency split phenomena, the reactive shield can reduce the magnetic field of the target frequency band with increasing power transfer efficiency. The simulation results of the suggested reactive shielding coil structure are verified with a 50 W-WPT system
Wireless Torque Transfer using Rotating Magnetic Field with Multiple Coils
Various methods of wireless torque transfer have been introduced to the fields of applications and highly utilized. In this paper, a method of wirelessly transmitting torque to a magnetic material by generating a rotating magnetic field using multi-coils is proposed. The rotating magnetic field generated by the current flowing in the proposed coil arrangement can be proved by using Biot-Savart law. Therefore, when a magnetic material is placed between the proposed coils, torque is generated due to the rotating magnetic field. Furthermore, since the torque by the magnetic field is closely related to the current applied to the coils, so that the torque can be changed through current. The proposed method was verified through theoretical analysis and simulation
Foreign Object Detection of Wireless Power Transfer System Using Sensor Coil
Wireless Power Transfer (WPT) system are used in many areas due to their advantages such as safety, aesthetics, and convenience. The WPT system are being applied not only smartphones that are common around us, but also to various electronics and medical devices. In particular, in the case of Electric Vehicle (EV), researches are steadily underway to apply the WPT system to solve the problem of battery dependence. Inductive power transfer (IPT) is the most popular WPT method to transfer power using the magnetic field. However, Foreign Object (FO) in WPT system can be heated by strong magnetic field and can lead to fires. Also, it can reduce power transfer efficiency. The risk of fire in a WPT system such as EVs, which require large power, is a major obstacle. Therefore, FO detection method is necessary for the safety and good performance. In this paper, we propose a Foreign Object Detection method using sensor coils. The proposed method is simple and shows the good performance compared with conventional method
Deterministically-grown GaN microrods on a mask-free plateau patterned substrate
In this study, a polished plateau-patterned sapphire substrate (PP-PSS) was developed to grow epitaxial GaN microrods using an AlN buffer layer via pulsed metal-organic chemical vapor deposition. The diameter of the plateau region could be easily adjusted in the range of 600-1600 nm by altering the polishing time, allowing the selective growth of the GaN microrods in only the plateau region and subsequent deposition on the AlN layer. The GaN microrod growth mechanism on the PP-PSS was explained using the morphology of the grown GaN microrods. Transmission electron microscopy revealed that the single-crystalline GaN microrods had a GaN (0002) d spacing of 0.263 nm, and a measured lattice constant ratio of the (0001) and (10 1 0) planes of 0.535, which is similar to the theoretical value of 0.532 for a fully relaxed GaN. Through Raman spectroscopy, the GaN microrod E2 (high) mode was 566.70 cm 1, which was shifted by only 0.50 cm -1 compared to that of the strain -free reference. These results suggest that stress-free GaN microrod epitaxial growth is possible on PP-PSS.
A COMPREHENSIVE ANALYTICAL MODEL FOR PNEUMATIC TIRES
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Presynaptic Dopamine Capacity in Patients with Treatment-Resistant Schizophrenia Taking Clozapine: An [18F]DOPA PET Study
Some patients with schizophrenia show poor response to first-line antipsychotic treatments and this is termed treatment resistant schizophrenia. The differential response to first-line antipsychotic drugs may reflect a different underlying neurobiology. Indeed, a previous study found dopamine synthesis capacity was significantly lower in patients with treatment resistant schizophrenia. However, in this study, the treatment resistant patients were highly symptomatic whilst the responsive patients showed no or minimal symptoms. The study could not distinguish whether this was a trait effect or reflected the difference in symptom levels. Thus we aimed to test whether dopaminergic function is altered in patients with a history of treatment resistance to first-line drugs relative to treatment responders when both groups are matched for symptom severity levels by recruiting treatment resistant patients currently showed low symptom severity with the clozapine treatment. Healthy controls(n=12), patients treated with clozapine(n=12) who had not responded to first-line antipsychotics and patients who had responded to first-line antipsychotics(n=12) were recruited. Participants were matched for age and sex, and symptomatic severity level in patient groups. Participants' dopamine synthesis capacity was measured by using [(18)F]DOPA PET. We found that patients treated with clozapine show lower dopamine synthesis capacity than patients who have responded to first-line treatment(Cohen's d=0.9191(whole striatum), 0.7781(Associative striatum), 1.0344(Limbic striatum), 1.0189(Sensorimotor striatum) in line with the hypothesis that the dopaminergic function is linked to treatment response. This suggests that a different neurobiology may underlie treatment resistant schizophrenia and that dopamine synthesis capacity may be a useful biomarker to predict treatment responsiveness.Neuropsychopharmacology accepted article preview online, 18 November 2016. doi:10.1038/npp.2016.258
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