1,309 research outputs found
Study on a NiTiHfTa shape memory alloy with high-pressure torsion and subsequent annealing
No full textAn alloy with the composition of 49.6Ni-35.4Ti-9Hf-6Ta (at%) was processed by high-pressure torsion (HPT) and postHPT annealing treatment. The microhardness of HPT-processed samples increased obviously, and amorphous featureappeared in 2 turns sample. The microhardness further increased and amorhozation was enhanced in 16 turns sample. After annealing at 750 ℃ for 3h, almost full crystallization occurs in 16 turns sample. In-situ high temperature X-ray diffraction experiment reveals that martensite to austenite transformation took place, indicating the alloy would exhibit SMA effect
A novel strategy for fabricating phase transforming NiTi shape memory alloy via multiple processes of severe plastic deformation
No full textNiTi shape memory alloy was successfully fabricated from Ni/Ti multilayers via an innovatively combinative route consisting of accumulative roll bonding (ARB), high-pressure torsion (HPT) and annealing. Due to the severe plastic deformation induced by ARB and HPT, the subsequently post annealing time was significantly reduced. Differential scanning calorimetry (DSC) analysis confirms the occurrence of austenitic and martensitic transformations during heating and cooling process, implying that the shape memory effect was obtained
Oxide diffusion barrier between ferromagnetic electrodes and GaAs(001)
No full textThe goal of the work is integrating half metallic ferromagnetic materials into semiconductors for spinstronics applications. Previous work of our group revealed a strong interdffusion between ferromagnetic layers and GaAs(001) substrates which affects spin-injection effciency and the semiconductor properties. In order to solve the problem, we insert here a thin MgO layer between them to act as both, diffusion and tunneling barrier.
MgO is deposited onto the As-rich GaAs(001)-c(4x4) surface at various temperature of 25-200 °C. The structural properties of the MgO flms are investigated by high energy electron diffraction (RHEED), x-ray diffraction (XRD), atomic force microscopy (AFM) and high resolution tunneling electron microscopy (HRTEM). Single-crystal MgO(001) films of high quality are obtained at a deposition temperature of 200 °C; the epitaxial relationship is MgO[100] II GaAs[100]. The high misfit strain of 34.2% is relieved to 0.65% by formation of a 4 : 3 commensurate lattice registry. This is corroborated by stress measurements performed in situ during film growth, which reveal the evolution of tensile strain due to the residual lattice misfit as well as layer-by-layer growth of the MgO film above 0.4 nm.
For real-space structure investigations of the surface of the GaAs(001)- c(4x4) substrates and thin MgO(001) films without breaking the vacuum, a Besocke-Beetle type scanning tunneling microscope (STM) attached to the III-V molecular beam epitaxy system was developed and built. We succeeded to resolve the c(4x4) reconstruction of the GaAs(001) surface after carefully degassing the amorphous As layer at 350 °C for 40 min after reducing the As flux to 1x10-8 mbar. STM images of ultrathin MgO layers (0.2-2 monolayers) show that the MgO grows as clusters extending along the [100] or [010] directions.
In order to study the capability of a MgO(001) layer to act as diffusion barrier, epitaxial Fe/MgO (1.5-3 nm)/GaAs(001) heterostructures have been prepared and investigated by cross sectional HRTEM, XRD and Auger electron spectroscopy depth-profiling (AES-DP). XRD and HRTEM results indicate the good film quality of Fe and MgO at 200 °C. The AES-DP results reveal that more than 2.5 nm of MgO layer can electively suppress interdiffusion.eingereicht von: Shibo WangZsfassung in engl. SpracheLinz, Univ., Diss., 201
Oxide diffusion barrier between ferromagnetic electrodes and GaAs(001)
No full textThe goal of the work is integrating half metallic ferromagnetic materials into semiconductors for spinstronics applications. Previous work of our group revealed a strong interdffusion between ferromagnetic layers and GaAs(001) substrates which affects spin-injection effciency and the semiconductor properties. In order to solve the problem, we insert here a thin MgO layer between them to act as both, diffusion and tunneling barrier.
MgO is deposited onto the As-rich GaAs(001)-c(4x4) surface at various temperature of 25-200 °C. The structural properties of the MgO flms are investigated by high energy electron diffraction (RHEED), x-ray diffraction (XRD), atomic force microscopy (AFM) and high resolution tunneling electron microscopy (HRTEM). Single-crystal MgO(001) films of high quality are obtained at a deposition temperature of 200 °C; the epitaxial relationship is MgO[100] II GaAs[100]. The high misfit strain of 34.2% is relieved to 0.65% by formation of a 4 : 3 commensurate lattice registry. This is corroborated by stress measurements performed in situ during film growth, which reveal the evolution of tensile strain due to the residual lattice misfit as well as layer-by-layer growth of the MgO film above 0.4 nm.
For real-space structure investigations of the surface of the GaAs(001)- c(4x4) substrates and thin MgO(001) films without breaking the vacuum, a Besocke-Beetle type scanning tunneling microscope (STM) attached to the III-V molecular beam epitaxy system was developed and built. We succeeded to resolve the c(4x4) reconstruction of the GaAs(001) surface after carefully degassing the amorphous As layer at 350 °C for 40 min after reducing the As flux to 1x10-8 mbar. STM images of ultrathin MgO layers (0.2-2 monolayers) show that the MgO grows as clusters extending along the [100] or [010] directions.
In order to study the capability of a MgO(001) layer to act as diffusion barrier, epitaxial Fe/MgO (1.5-3 nm)/GaAs(001) heterostructures have been prepared and investigated by cross sectional HRTEM, XRD and Auger electron spectroscopy depth-profiling (AES-DP). XRD and HRTEM results indicate the good film quality of Fe and MgO at 200 °C. The AES-DP results reveal that more than 2.5 nm of MgO layer can electively suppress interdiffusion.eingereicht von: Shibo WangZsfassung in engl. SpracheLinz, Univ., Diss., 201
Sarcinodes yeni Sommerer 1996
No full textSarcinodes yeni Sommerer, 1996 (Figs 10, 19, 25) Sarcinodes yeni Sommerer, 1996, Spixiana suppl., 22: 24. Type locality: China, Taiwan. Material examined. China: Guangxi (SCAU): 1♂, Napo county, Tongbiguan, 31. VI. 2008. Guangdong (SCAU): 2♂, Shenzhen, Wutongshan national forest park, 550 m, 19. VI. 2015, leg. Beiman Lin; 2♂, same collecting locality, 20. XII. 2015, 550 m, leg. Tiantian Yu; 1♀, same collecting locality, 07. V. 2015. leg. Shibo Bao; 1♂, same collect- ing locality, 440 m, 17. III. 2016, leg. Beiman Lin; 1♂, same collecting locality, 500 m, 05. I. 2016, leg. Beiman Lin; 1♂, same collecting locality, 16. III. 2018, leg. Tiantian Yu; 1♂, Huizhou, Nankunshan, 05. XII. 2002; 1♂, same collecting locality, 17. V. 2002; 1♂, same collecting locality, 17. III. 2006; 4♂, Yingde, Shimentai, 04. IV. 2017. Hainan (SCAU): 1♂, Ledong Li autonomous county, Yinggeling national nature reserve, 06. IX. 2006, leg. Liusheng Chen; 1♂, same collecting locality, 22. XI. 2005, leg. Min Wang; 1♂, same collecting locality, 04. XII. 2005, leg. Min Wang; 2♂, same collecting locality, 06. IX. 2005, leg. Min Wang; 3♂, same collecting locality, 19. X. 2005, leg. Min Wang; 2♂, Baisha Li autonomous county, Hongkan reservoir of Yinggeling national nature reserve, 29. V. 2018. Distribution. China (Guangxi, Guangdong, Hainan, Taiwan).Published as part of Yu, Tiantian & Wang, Min, 2020, A new species of the genus Sarcinodes (Lepidoptera, Geometridae) from China, pp. 553-562 in Zootaxa 4779 (4) on page 561, DOI: 10.11646/zootaxa.4779.4.6, http://zenodo.org/record/383952
A dual-mode microfluidic chip embedded with photoelectrochemical sensing and fluorescence imaging for phenotypic analysis of tumor cells
No full textCirculating tumor cells (CTCs) in peripheral blood are a heterogeneous population responsible for tumor metastasis. Therefore, the isolation of CTCs and precise analysis of their phenotypes are crucial for early cancer diagnosis and effective treatment. In this study, we developed an integrated microfluidic chip capable of efficiently isolating CTCs from whole blood and performing dual-mode detection using near-infrared photoelectrochemical (PEC) aptasensors and fluorescence imaging. This dual-mode strategy enhances phenotypic screening and improves detection accuracy. The chip features a herringbone-shaped microfluidic channel coupled with a PEC sensing system based on Yb-Bi2S3@AuNPs nanocomposites, which serve as photoelectric conversion elements, and an aptamer-functionalized surface for CTC capture. Utilizing a "rail transit" principle, different CTC phenotypes were selectively captured and screened based on spatial effects. Following capture, the CTCs were labeled with a hemicyanine fluorescent probe for fluorescence imaging. The system achieved a tumor cell separation efficiency of up to 90 %. The combination of PEC aptasensor sensitivity and fluorescence imaging ensures the high accuracy of tumor cell detection. This dual-mode system provides both highly sensitive PECbased detection and fluorescence-based cell counting, enabling the phenotypic screening and quantification of CTCs with exceptional performance.This work is financially supported by the National Natural Science Foundation of China (No. 22074160, 21874157, 22474158); the Fundamental Research Funds for the South-Central Minzu University (No. CZZ22003); the Fund for Scientific Research Platforms of SouthCentral Minzu University (No.PTZ24010); the Fund for Academic Innovation Teams of South-Central Minzu University (No. XTZ24010); Open Project Funding of Ministry of Education Key Laboratory for the Synthesis and Application of Or
Infinitely Many Solutions for Schrödinger–Poisson Systems and Schrödinger–Kirchhoff Equations
No full textBy applying Clark’s theorem as altered by Liu and Wang and the truncation method, we obtain a sequence of solutions for a Schrödinger–Poisson system −Δu+V(x)u+ϕu=f(u)inR3,−Δϕ=u2inR3 with negative energy. A similar result is also obtained for the Schrödinger-Kirchhoff equation as follows:−1+∫RN∇u2Δu+V(x)u=f(u)u∈H1(RN)
On ground states of superlinear p-Laplacian equations in RN
No full textAbstractWe consider superlinear p-Laplacian equations in RN with a potential which is periodic or has a bounded potential well. Without assuming the Ambrosetti–Rabinowitz type condition and the monotonicity of the function t↦f(x,t)|t|p−1, we prove the existence of ground states. Even for the case p=2, our results extend the recent results of Li, Wang and Zeng [Ann. Inst. H. Poincaré Anal. Non Linéaire 23 (2006) 829–837]
Sarcinodes mongaku Marumo 1920
No full textSarcinodes mongaku Marumo, 1920 (Figs 6, 15, 22) Sarcinodes mongaku Marumo, 1920, J. Coll. Agric. imp. Univ. Tokyo, 6: 263. Type locality: Japan, Honshu. Material examined. China: Zhejiang (SCAU): 1♂, Jiangshan, Xikou village, 04. VII. 2017, leg. Zhipeng Miao. Guangdong (SCAU): 1♂, Yingde, Shimentai national nature reserve, 18. IV. 2003; 2♂, 1♀, same collecting local- ity, 150 m, 15–29. IV. 2018, leg. Zhipeng Miao; 1♂, same collecting locality, VII. 2001; 2♂, same collecting local- ity, 05. V. 2016; 1♂, same collecting locality, 03. IV. 2017, leg. Fuhong Wei; 1♂, Shenzhen, Wutongshan national forest park, 500 m, 14. IV. 2015, leg. Tiantian Yu; 1♂, same collecting locality, 600 m, 23. IV. 2015, leg. Tiantian Yu; 1♂, same collecting locality, 100 m, 24, IV. 2015, leg. Beiman Lin; 1♂, same collecting locality, 550 m, 19. VI. 2015, leg. Shibo Bao; 1♂, same collecting locality, 440 m, 05. I. 2016, leg. Tiantian Yu. 1♂, Huizhou, Nankunshan, 19. III. 2006. Distribution. China (Zhejiang, Guangdong, Taiwan), Japan, Vietnam.Published as part of Yu, Tiantian & Wang, Min, 2020, A new species of the genus Sarcinodes (Lepidoptera, Geometridae) from China, pp. 553-562 in Zootaxa 4779 (4) on page 560, DOI: 10.11646/zootaxa.4779.4.6, http://zenodo.org/record/383952
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