1,724,313 research outputs found
09-0079 VENKATESWARLU THOTA, M.D. v. YOUNG
No full text09-0079 Venkateswarlu Thota, M.D., and North Texas Cardiology Center v. Margaret Young from Wichita County and the Second District Court of Appeals, Fort Worth For petitioners: Diana L. Faust, Dallas For respondents: J. Mark Perrin, Dallas In this medica
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Centrifugal distortion constants of Methyl acetylene and Methyl haloacetylenes
No full textThe centrifugal distortion constants of Methyl acetylene and Methylhaloacetylenes have been evaluated for the first time using the potential energy constants and following the method suggested by Kivelson and Wilson and Cyvin et al.Sabapathy K., Ramasamy R, Venkateswarlu K. Centrifugal distortion constants of Methyl acetylene and Methyl haloacetylenes. In: Bulletin de la Classe des sciences, tome 66, 1980. pp. 792-795
HZO (>10 nm) Films for Achieving High-κ Near Morphotropic Phase Boundary at Low-Temperature Furnace Annealing Process
No full textRecently,hafniumzirconiumoxide(HfxZr1-xO2, HZO) films gained considerable attentionin sensors, displays, and memory devices. However,one of the main drawbacks of HZO material is that asthe film thickness increases, the dielectric constant (kappa)can deteriorate. To address this issue, we investigateda study on the enhancement of dielectric constantfor HZO films (>10 nm) at a low thermal budget.We experimentally demonstrated the existence of amorphotropic phase boundary (MPB) in the HZO filmsby employing postmetallization annealing (PMA) processat 350 degrees C. A high dielectric constant was achieved byoptimizing process parameters, such as HZO compositions(1:1, 1:3, and 1:5), HZO film thicknesses (15, 30, and45 nm), and different annealing conditions (PMA 350 degrees Cand PDA 350 degrees C). The maximum dielectric constant ofTiN electrodes was found to be around 38 near MPB forthe 15-nm-thick HZO (1:5) films due to the formation of ahigh tetragonal phase (t-phase) in Zr-rich films. As the filmthickness increases, the dielectric constant also decreases.On the other hand, the PDA devices exhibit exclusivelyferroelectric behavior due to the higher orthorhombicphase (o-phase). Also, endurance measurements wereperformed on both PMA and PDA, revealing that thesedevices are endurable up to 10(10)cycles. Furthermore,the dielectric constant was enhanced greatly to 43 at15-nm-thick HZO and 39 at 30-nm-thick HZO by utilizing theMo top electrode. This work provides a promising methodfor achieving a high dielectric constant in HZO films forsmart electronic systems
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Centrifugal distortion constants of mixed boron halides
No full textThe centrifugal distortion constants of twelve mixed boron halides have been calculated for the first time, using the method suggested by Wilson and Kivelson and Cyvin et al., and the results have been discussed in relation to the force constants and the moments of inertia.Kamaraj V., Ramasamy R, Venkateswarlu K. Centrifugal distortion constants of mixed boron halides. In: Bulletin de la Classe des sciences, tome 66, 1980. pp. 381-388
/TiN Capacitors
No full textIn recent years, hafnium zirconium oxide (HZO) has received significant attention of the research community due to the demontsrattion of ferroelectricity at sub 10 nm thickness and good CMOS-compatibility. However, ferroelectricity in HZO is dependent on various factors such as the HZO composition, materials used as top or bottom electrode, post metallization technique, annealing pressure and temperature etc. Herein, we have systematically investigated the effect of high pressure post metallization annealing (HPPMA) temperature on the ferroelectric properties of TiN/Hf0.25Zr0.75O2/TiN capacitors. Hf0.25Zr0.75O2, that show antiferroelectric behavior in rapid thermal annealing, demonstrate antiferroelectric to ferroelectric phase transition depending on the HPPMA temperature. Maximum remanent polarization (P-r) of similar to 29 mu C/cm(2) is achieved for HPPMA temperature 550 degrees C whereas the maximum dielectric constant (k) of similar to 46 is achieved for HPPMA temperature 350 degrees C. The interfacial capacitance of the MFM capacitors increased with increasing the HPPMA annealing temperature. The results obtained in this study open up the possibility of achieving high-k ferroelectric capacitors using Zr rich HZO films that can be applicable to various electronic devices
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