290 research outputs found
An analytical model for the lateral insulated gate bipolar transistor(LIGBT) on thin SOI
No full textWhile there are several analytical models dedicated
to vertical insulated gate bipolar transistors (IGBTs) there is virtually
no reliable model for lateral IGBTs (LIGBTs). LIGBTs are
increasingly popular in smart power and power integrated circuits,
especially in those applications where high voltage (e.g., 600 V) and
high current capability (e.g., 30 A/cm2) are required. In this paper,
we report for the first time a complete analytical model for the
LIGBT based on semiconductor physics with very few fitting parameters.
The model is implemented in the widely available circuit
simulator PSpice. The model consistently describes the current and
voltage waveforms for all loading conditions. The model is assessed
against finite element device simulations and experimental results
Modeling Turn-off Voltage rise in SOI LIGBT
No full textThe behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise. In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT
Author response to: Cardiovascular risk factors in offspring exposed to gestational diabetes mellitus in utero: systematic review and meta-analysis
No full textLetter to the EditorThis commentary is an author response to Yu and colleagues regarding the manuscript entitled ‘Cardiovascular risk factors in offspring exposed to gestational diabetes mellitus in utero: Systematic review and meta-analysis’. We address their concern regarding minor errors in our manuscript, our search strategy and assessment of heterogeneity.Maleesa M. Pathirana, Zohra S. Lassi, Claire T. Roberts, and Prabha H. Andraweer
Modeling Voltage Derivative During Inductive Turnoff in Thin SOI LIGBT
No full textThe lateral insulated gate bipolar transistor (IGBT)
behavior differs in many aspects from the well-studied vertical
IGBT. In this paper, the voltage derivative during inductive turnoff
for a silicon-on-insulator (SOI) lateral IGBT (LIGBT) is analyzed
in detail. A complete model which accounts for the voltage rise is
implemented through an accurate calculation of the equivalent
output capacitance. The model is in excellent agreement with
two-dimensional simulations and experimental results across a
wide range of conditions. Further, the paper shows that previously
proposed models, which targeted the vertical IGBT, are not adequate
for the description of the turnoff voltage rise in the LIGBT
ACCURATE PHYSICAL MODEL FOR THE LATERAL IGBT IN SILICON ON INSULATOR TECHNOLOGY
No full textMany vertical IGBT models are currently available. They have also been implemented in commercial simulators and describe device behavior both in steady-state and transient. However, no reliable device models have been proposed for the Lateral IGBT that is widely used in the field of smart power integrated circuits. In this paper a complete physical model for the Lateral IGBT fabricated in Silicon On Insulator technology is developed. The model is implemented in Pspice circuit simulator. Model results are compared against finite element device simulation. A comparison with the most common vertical IGBT Pspice model shows that vertical IGBT models are not able to correctly predict lateral IGBT behavior
Complete Isothermal Model for the Lateral Insulated Gate Bipolar Transistor on SOI technology
No full textWhile there are several analytical models dedicated to the vertical IGBT there is virtually no reliable model for the Lateral IGBT (LIGBT). LIGBTs are increasingly popular in smart power and power integrated circuits, especially in those applications where high voltage and high current capabilities are required. Silicon on insulator (SOI) could be the future technology for power devices and integrated circuits due to its much improved device isolation. In this work we report for the first time a complete analytical model for the SOI LIGBT based on semiconductor physics with very few fitting parameters. The model is assessed against finite element device simulations and experimental results
A desk review of Sri Lankan migrant worker deaths in 2009
No full textObjectives A desk review and indirect standardisation techniques are used to describe the mortality risk for Sri Lankan migrant workers.
Methods Annonymised data were extracted from Sri Lanka Bureau of Foreign Employment case files recording deaths during 2009. Indirect standardisation is used to compare death rates taking into account age-sex distribution of the groups. As the actual age death distribution of the departures for 2009 was not available, estimates were derived using departure for 2007, 2008 and 2009.
Results Out of 333 deaths reported in 2009, 328 were analysed. The mortality rates for males and females based on 2007, 2008 and 2009 estimates were consistent for all age groups. Females aged 25-29 years were at an increased risk of death relative to their counterparts in Sri Lanka.
Conclusions Although information from the country of death is inaccessible, data available locally can be analysed systematically to highlight pertinent migrant workers' issues.Full Tex
Effect of Bandgap Narrowing on Performance of Modern Power Devices
No full textThe effect of the bandgap narrowing (BGN) on
performance of power devices has been investigated in detail in
this paper. The analysis has revealed that the change in the
energy band structure caused by bandgap narrowing can
strongly affect the conductivity modulation of the bipolar devices
resulting in completely different performance. This is due to the
modified injection efficiency under high level injection
conditions. Using a comprehensive analysis of the injection
efficiency in a p-n junction an analytical model for this
phenomenon has been developed. Bandgap narrowing model
tuning has been proved to be essential in accurately predicting
the performance of a Lateral IGBT. Other devices such as PIN
diodes or PT IGBTs are significantly affected by the BGN while
others, such as FS IGBT or the power MOSFET, are only
marginally affected
A compact model for thin SOI LIGBTs: description, experimental verification and system application
No full textA complete physical model for the Lateral IGBT in Thin Silicon On Insulator technology is presented for the first time. The model is oriented to circuit simulators and is implemented in Pspice. Model results are compared against experimental results and Medici numerical simulations. Numerical convergence performance of the model is verified through the simulation of a half bridge circuit and a complete flyback switch mode power supply
Supplementary scripts for Kiss et. al (2023)
No full text<div>
<p>These are the supplementary scripts for the article:</p>
<p>Anna E Kiss, Anuroop V Venkatasubramani, Dilan Pathirana, Silke Krause, Aline Campos Sparr, Jan Hasenauer, Axel Imhof, Marisa Müller, Peter B Becker, Processivity and specificity of histone acetylation by the male-specific lethal complex, <em>Nucleic Acids Research</em>, 2024;, gkae123, <a href="https://doi.org/10.1093/nar/gkae123">https://doi.org/10.1093/nar/gkae123</a></p>
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