45 research outputs found

    Semiconductors V. 33, I. 03

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    leave(s) : ill; 28 cm.Semiconductors -- March 1999 Volume 33, Issue 3, pp. 265-372 REVIEW Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review E. G. Guk, A. V. Kamanin, N. M. Shmidt, V. B. Shuman, and T. A. Yurre Full Text: PDF (175 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Dielectric properties of the semiconducting compounds Cd1���xFexTe P. V. Zukowski, J. Partyka, P. Wegierek, J. W. Sidorenko, J. A. Szostak, and A. Rodzik Full Text: PDF (56 kB) Current-illumination characteristics of CdHgTe crystals with photoactive inclusions A. I. Vlasenko and Z. K. Vlasenko Full Text: PDF (95 kB) Temperature dependences of the photoconducitivty of CdHgTe crystals with photoactive inclusions A. I. Vlasenko and Z. K. Vlasenko Full Text: PDF (117 kB) Raman scattering spectroscopy of Zn1 ��� xCdxSe films grown on GaAs substrates by molecular-beam epitaxy L. K. Vodop'yanov, N. N. Mel'nik, and Yu. G. Sadof'ev Full Text: PDF (59 kB) Optical and photoelectric properties of Zn1 ��� xFexTe crystals Yu. P. Gnatenko, I. A. Farina, and R. V. Gamernyk Full Text: PDF (83 kB) Calculating the band structure of InSb1 ��� xBix solid solutions V. G. Deibuk, Ya. I. Viklyuk, and I. M. Rarenko Full Text: PDF (108 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Effective charge carrier lifetime in CdHgTe variable-gap structures V. M. Osadchii, A. O. Suslyakov, V. V. Vasil'ev, and S. A. Dvoretsky Full Text: PDF (84 kB) Polarization photosensitivity of GaN/Si heterojunctions V. M. Botnaruk, S. D. Raevsky, V. V. Belkov, Yu. V. Zhilyaev, Yu. V. Rud, L. M. Fedorov, and V. Yu. Rud Full Text: PDF (103 kB) Mechanism for heavy Fe doping of epitaxial GaAs/AlGaAs heterostructures I. Ya. Gerlovin, Yu. K. Dolgikh, S. A. Eliseev, Yu. P. Efimov, I. A. Nodokus, V. V. Ovsyankin, V. V. Petrov, and B. Ya. Ber Full Text: PDF (58 kB) Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures E. I. Goldman, A. G. Zhdan, and N. F. Kukharskaya Full Text: PDF (120 kB) LOW-DIMENSIONAL SYSTEMS Selective doping in hydride epitaxy and the electrical properties of quantum-well Ge/GeSi:B heterostructures L. K. Orlov, R. A. Rubtsova, and N. L. Orlova Full Text: PDF (94 kB) Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots V. A. Kul'bachinskii, V. G. Kytin, R. A. Lunin, A. V. Golikov, I. G. Malkina, B. N. Zvonkov, and Yu. N. Saf'yanov Full Text: PDF (124 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Comparative study of the optical properties of porous silicon and the oxides SiO and SiO2 A. N. Obraztsov, V. Yu. Timoshenko, H. Okushi, and H. Watanabe Full Text: PDF (72 kB) Photosensitive structures based on porous silicon �. B. Kaganovich, �. G. Manoilov, and S. V. Svechnikov Full Text: PDF (84 kB) Photoconductivity of amorphous hydrated silicon doped by ion implantation A. G. Kazanskii, N. V. Ryzhkova, and S. M. Pietruszko Full Text: PDF (74 kB) Electronic properties and structure of a-Si : H films with higher photosensitivity O. A. Golikova and M. M. Kazanin Full Text: PDF (73 kB) PHYSICS OF SEMICONDUCTOR DEVICES Electrical and photoelectric characteristics of n-Si/porous silicon/Pd diode structures and the effect of gaseous hydrogen on them S. V. Slobodchikov, D. N. Goryachev, Kh. M. Salikhov, and O. M. Sreseli Full Text: PDF (95 kB) Temperature dependence of the quantum efficiency of silicon p ��� n photodiodes Yu. A. Goldberg, V. V. Zabrodsky, O. I. Obolensky, T. V. Petelina, and V. L. Suhanov Full Text: PDF (51 kB) Planar-doped gallium-arsenide structures for bulk potential barrier microwave diodes N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, V. V. Volkov, and M. F. Kokorev Full Text: PDF (87 kB) Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions G. G. Zegrya, M. P. Mikhailova, T. N. Danilova, A. N. Imenkov, K. D. Moiseev, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (107 kB) Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure B. E. Zhurtanov, K. D. Moiseev, M. P. Mikhailova, T. I. Voronina, N. D. Stoyanov, and Yu. P. Yakovlev Full Text: PDF (104 kB) Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors E. V. Astrova, V. B. Voronkov, A. A. Lebedev, A. N. Lodygin, and A. D. Remenyuk Full Text: PDF (144 kB) Vertical double-collector, strain-sensitive transistor with accelerating electric fields in the base and in the emitter G. G. Babichev, S. I. Kozlovskii, and V. A. Romanov Full Text: PDF (151 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department

    The method for breeding and genetic assessment of Scotch pine clones at forest seed orchards

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    Fast height growth selection usually considered as the basic type of Scotch pine breeding strategy. Due to this fact height growth of pine clones usually is taken as the first key feature. In the view of good seed production there is only one indicator that could be adopted as having summarized effect reflecting the real contribution of a clone to the whole seed orchard yield. This is an average number of full seeds per tree (ramet). This trait is the second most important one after the height growth ability feature. The way of two-trait breeding program with the aforesaid features seemed to be the most suitable for Scotch pine. Main theses of 4-stages complex assessment procedure have been formulated concerning Scotch pine vegetative progenies grown at seed orchards. It was stated that this system of breeding and genetic assessment is based on correlations found for habitus and reproductive features of Scotch pine clones along with the height growth ability of their seed progenies. In the first stage pine clones meeting the criteria (≥ X + 0.5σx) regarding height growth are to be selected. In the second stage, clones with hard tapering stem and crown formed by long and thick branches have to be discarded. At this stage, such feature as «mean diameter of three thickest limbs at the height of 1.5–2.0 m» became the key factor. Its mean value for selected clones must not be by 1–2 % higher than for general clone set. In the third stage a complex of reproductive features for clones that have passed the previous stages are taken into account. The trait «average number of full seeds per ramet» is the key feature in this stage according to the criteria (≥ X ). The fourth stage implies that progeny trials with open-pollinated progenies ought to be laid down to calculate the general and specific combining ability. It has been concluded that high intensive selection of clones grown at the I-stage seed orchards promotes a substantial genetic gain expected at the subsequent breeding stages. Seven clones (10 % of the total) have been selected using the two-trait breeding approach. As a result, habitus features of the selected clones became much better. The height and stem diameter increased by 7.6 and 2.6 % and crown width along with branch diameter did the same by 2.1 and 1.2 %, respectively. At the same time seed yield increased by 43.0 %

    The Study of the Decorative-Applied Art of Northern East Ukraine of the Second Half of the 19-th – the Beginning of the 20-th Century in the Pre-Sovi Period

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    Статтю присвячено історіографії дослідження декоративно-прикладного мистецтва в Північно-Східній Україні другої половини ХІХ – початку ХХ століття провідними діячами культури, науки, мистецтва, освіти означеного періоду. Автором визначено пріоритетні напрями дослідження проблеми в галузі історії, педагогіки, мистецтвознавства, економіки, статистики.The article is devoted to the historiography of the study of decorative and applied art in the north-eastern Ukraine of the second half of the nineteenth and early twentieth centuries by leading figures of culture, science, art education of the period. The author identifies the directions of research in the field of history, pedagogy, art studies, economics, statistics. Describing the pre-Soviet period (1861-1917), the study of the development of scientific thought on the history of the development of arts and crafts and the organization of its study in the North-East of Ukraine in the second half of the 19-th – early 20-th century, the author stated that in the Russian Empire as a result of reforms carried out in 1860. There have been significant changes in the political and socio-economic life of the country, which has led to significant changes in the education system in Ukraine. It is determined that the beginning of the scientific study of arts and crafts in the Northeast Ukraine falls to the second half of the nineteenth century: in the 1860-s the first attempts were made to scientific analysis of the problem. Among the scholarly works, the first and foremost was the study of historians, ethnographers, culturologists and economists of the Populist trend, paying close attention to socio-economic problems, highlighting the essence of the economic system of the Russian Empire, in which not only the artisan craftsmanship was given to them number of An important role in the study of arts and crafts in the north-eastern Ukraine of this period belongs to such researchers, figures of culture, art and education as: A. Babenko, M. Belyashivsky, S. Davydov, A. Kosach-Dragomanov, P. Litvinov, M. Rajewska-Ivanova, S. Raevsky, M. Sumtsov, K. Shirotsky and others

    Micromagnetic survey experience in the mapping of the South Sopcha platinum-bearing intrusion, Monchegorsk ore district

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    The norite-pyroxenite zone hosting platinum group element (PGE) mineralization is located at the base of the South Sopcha intrusion being a part of the Monchegorsk layered complex. The complex geological structure of the norite-pyroxenite zone, dipping at angles from 20° to 80°, is defined by frequent alternation of pyroxenites and taxitic gabbroids of mafic composition. There is an assumption that the first group of rocks of this zone, represented by pyroxenites with peridotites interlayers, was formed before the rocks of the second group, including mineralized taxitic mafic gabbroids distributed throughout the whole zone in the form of lenticular vein-like bodies. Micromagnetic survey used for the first time in the Kola Region is an effective tool for studying objects with such complex structures. The results of the micromagnetic survey at two detailed sites located within the Arvarench PGE occurrence, surveyed in 2011 and 2024 using 5×1 m and 4×1 m grids, respectively, are presented in our paper. The analysis based on a comparison of the loss of information when using less detailed grids shows that the loss in the case of grid discharge is significant and the effectiveness of the magnetic survey for mapping is greatly reduced. The results of petrophysical measurements and micromagnetic survey together lead to the following assumptions about the magnetic field over the norite-pyroxenite zone: 1) high-amplitude positive anomalies are associated with peridotites; 2) mineralized taxitic mafics containing a high proportion of magnetite along with disseminated sulfides are characterized by medium-amplitude anomalies; 3) the lower contact of the intrusion with less magnetic Archean gneisses is fixed in the magnetic field by a negative curve-shaped anomaly; 4) tectonic zones probably consisting of remagnetized rocks are marked by linear negative anomalies. It is argued that micromagnetic survey in combination with detailed magnetometry can be used for geological mapping of layered intrusions and prospecting for PGE mineralization

    COMPLEX GEOLOGICAL–GEOPHYSICAL 3D MODEL OF THE CRUST IN THE SOUTHEASTERN FENNOSCANDIAN SHIELD: NATURE OF DENSITY LAYERING OF THE CRUST AND THE CRUST–MANTLE BOUNDARY

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    The complex geophysical 3D model of the Earth's crust and the upper mantle is created for the Archaean Karelian Craton and the Late Palaeoproterozoic accretionary Svecofennian Orogen of the southeastern Fennoscandian Shield with the use of methods of complex inversion of geophysical data based on stochastic description of interrelations of physical properties of the medium (density, P-wave velocity, and heat generation). To develop the model, we use results of deep seismic studies, gravity and surficial heat flow data on the studied region. Numerical solutions of 3D problems are obtained in the spherical setting with an allowance for the Earth's surface topography. The geophysical model is correlated with the regional geological data on the surface and results of seismic CMP studies along 4B, FIRE-1 and FIRE-3-3A profiles. Based on results of complex geophysical simulation and geological interpretation of the 3D model, the following conclusions are drawn. (1) The nearly horizontal density layering of the continental crust is superimposed on the previously formed geological structure; rock differentiation by density is decreasing with depth; the density layering is controlled by the recent and near-recent state of the crust, but can be disturbed by the latest deformations. (2) Temperature variations at the Moho are partially determined by local variations of heat generation in the mantle, which, in turn, are related to local features of its origin and transformation. (3) The concept of the lower continental crust being a reflectivity zone and the concept of the lower continental crust being a layer of high density and velocity are not equivalent: the lower crust is the deepest, high-density element of near-horizontal layering, whereas the seismic image of the reflectivity zone is primarily related to transformation of the crust as a result of magmatic under- and intraplating under conditions of extension and mantle-plume activity. (4) At certain combinations of crustal thickness and temperature at the level of Moho discontinuity, the crust in a platform region can be transformed into eclogites. In this case, the crust–mantle boundary is determined by quantitative proportions of the rocks that underwent eclogitization or escaped this process and by corresponding density and velocity values. (5) High compaction of rocks in the crust under lithostatic loading cannot be explained by «simple» concepts of metamorphism and/or rock compaction, which are based on laboratory studies of rock samples and mathematical simulations; this is an evidence of the existence of additional, quite strong mechanisms providing for reversible changes of the rocks

    Changes in sensitivity of cholinoceptors and adrenoceptors during transhemispheric cortical reorganisation in rat SmI

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    The reorganisation of primary somatosensory cortex that occurs after lesioning the corresponding cortex of the contralateral hemisphere in rat has been termed, 'transhemispheric cortical reorganisation'. Cholinergic and noradrenergic innervations are hypothesized to be involved in cortical plasticity. The present study investigated the change in responses of somatosensory neurones in the hindpaw representation area to muscarinic cholinoceptor and beta -adrenoceptor receptor stimulation, by iontophoretic application of acetylchorine, noradrenaline, propranolol and atropine, during the process of transhemispheric cortical reorganization at 3-4 days and at 20-21 days after lesioning the corresponding area in the contralateral hemisphere. Most neurones in control rats showed excitatory atropine-sensitive responses to acetylcholine, and inhibitory propranolol-sensitive responses to noradrenaline. A marked reduction in neurones exhibiting muscarinic responses (from 69% to 22%) and beta -noradrenoceptor-mediated responses (from 62% to 24%) were seen in rats 3-4 days post lesion. The proportion of neurones responding had recovered by 3 weeks but the direction of the responses had changed with muscarinic response becoming predominantly inhibitory and beta -noradrenoceptor responses predominantly excitatory. It is concluded that transhemispheric cortical reorganization involves both receptor types and that the reciprocal changes at different stages after injury maintain cortical plasticity. (C) 2001 Elsevier Science B.V; All rights reserved

    Risk factors, criteria and biomarkers of acute kidney injury in the perioperative period

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    It is becoming increasingly important to prevent complications of surgical treatment, including perioperative acute kidney injury due to prolongation of life expectancy and age-related multicomorbidity. The objective was to review the recommendations of the expert groups and the studу results on risk factors, criteria and biomarkers of perioperative acute kidney injury.Materials and methods. Reports on search results for the last 15 years as of May 15, 2023 in the eLibrary, PubMed databases for the keywords «acute  kidney injury», «biomarker», «perioperative period». The inclusion of reports in the review and their evaluation are based on the authors consensus.  Results. In the perioperative period, acute kidney injury without a decrease in diuresis and/or an increase in serum creatinine levels up to a certain time  may occur. This condition, which varies in causes and mechanisms of development, is potentially reversible with timely detection and treatment. The  study of both biomarkers that surpass creatinine and diuresis in the timing and accuracy of detecting kidney damage/dysfunction, as well as tools for  a comprehensive assessment and risk stratification of perioperative acute kidney injury, have not yet been completed with evidence-based conclusions.  Conclusion. The strategy of using laboratory biomarkers in combination with the clinical context and risk factors for the prevention, diagnosis and  treatment of subclinical acute kidney injury of various origins, supported by the Acute Disease Quality Initiative (2020), could be implemented  based on additional evidence from future clinical studies
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