1,720,973 research outputs found
A Harmonic-Balance-oriented modeling approach for microwave electron devices
No full textA technology-independent model of microwave electron devices, the Nonlinear Integral Model, is proposed. This model is rigorously derived from the Volterra series under mild assumptions valid for most types of electron devices and is particularly suitable for circuit analysis based on harmonic-balance techniques. Moreover, it makes it possible to compute the large-signal response of an electron device directly in terms of data obtained by physics-based numerical simulations. The validity of the model is confirmed both by simulation and by experimental results
Microwave large-signal amplifier design using a quasi-black-box transistor model
No full textA method for the design of large-signal microwave amplifiers using a quasi-black-box transistor model is described. It is based on design maps, drawn on the basis of a suitable large-signal mathematical model of the transistor, which permit a straightforward search for the load reflection coefficient which provides maximum saturated output power or, alternatively, a good compromise between conflicting gain and output power requirements. This method, besides being accurate enough for most amplifier design problems, is also quite simple to apply in practice, since the numerical computations involved can easily be programmed on a desk-top personal computer. The design procedures were implemented in a Fortran program running on an IBM AT personal computer, requiring 350-kB RAM and a very short (a few minutes) total computing time. The good agreement between predicted and measured performance confirms the validity of the method
Technology independent nonlinear integral model of microwave electron devices
Full text linkThe paper describes a new technology-independent model for the large-signal performance prediction of electron devices. The Nonlinear Integral Model (NIM) is rigorously derived from the Volterra series through suitable modifications so that fast convergence can be achieved even under large-signal strongly nonlinear operation. In particular, the NIM, which can be directly used for Harmonic-Balance circuit analysis, enables the large-signal dynamic response of electron devices to be directly computed on the basis of data obtained either by conventional measurements or physics-based numerical simulations. This property makes the NIM particularly convenient for linking accurate device simulation based on carrier transport physics and Harmonic-Balance circuit analysis. Simulations and experimental results confirm the validity of the proposed modelling approach
A look-up table empirical model for the nonlinear dynamic performance prediction of microwave transistors
No full textThis paper describes a mathematical model which has been adopted for the large-signal performance prediction of electron devices in the framework of Harmonic-Balance tools for circuit analysis. The model, which is technology independent, is based on look-up tables storing small-signal bias/frequency-dependent AC parameters and DC characteristics obtained by means of conventional automated measurement equipment. The large-signal dynamic device response is predicted, directly from the measured data, through a Nonlinear Integral expression. In the paper special attention will be given to practical aspects (e.g., accuracy limitations, numerical interpolation techniques, etc..,.). Experimental and simulated results which confirm the validity of the proposed modelling approach are also presented
Large-signal modelling of Dual-Gate GaAs MESFETs
No full textA mathematical approach, which has been recently proposed for the nonlinear modelling of microwave transistors, is adopted for the large-signal performance prediction of Dual-Gate GaAs MESFETs in the framework of Harmonic-Balance circuit analysis. Unlike classical equivalent circuits, the nonlinear model adopted here can be directly identifled on the bases of DC characteristics and small-signal biasdependent AC parameters without need for optimisation-based procedures for parameter extraction. The validity of the large-signal modelling approach is confirmed by accurate physics-based numerical simulations of a Dual-Gate GaAs MESFET mixer
- …
