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Semiconductors V. 39, I. 12
No full textSemiconductors -- December 2005
Volume 39, Issue 12, pp. 1361-1432
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electroluminescence of Graded-gap Structures with Blocking and Ohmic Contacts
B. S. Sokolovskii, V. I. Ivanov-Omskii, and G. A. Il'chuk
pp. 1361-1368 Full Text: PDF (99 kB)
Mössbauer Study of the Ge Two-Electron Donor Centers in PbSe
E. I. Terukov and É. S. Khuzhakulov
pp. 1369-1370 Full Text: PDF (36 kB)
Electron Exchange between Neutral and Ionized Germanium Centers in PbSe
E. I. Terukov and É. S. Khuzhakulov
pp. 1371-1373 Full Text: PDF (38 kB)
Characterization of Photonic Crystals Based on Opal–Semiconductor Composites by Bragg Reflection Spectroscopy
G. M. Gadzhiev, V. G. Golubev, D. A. Kurdyukov, A. B. Pevtsov, A. V. Sel'kin, and V. V. Travnikov
pp. 1374-1380 Full Text: PDF (89 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
On the Effect of Transverse Quantum Confinement on the Electrical Characteristics of a Submicrometer-Sized Tunnel MOS Structure
M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 1381-1386 Full Text: PDF (96 kB)
Simulation of the Capacitance–Voltage Characteristics of a Ferroelectric Material
L. S. Berman
pp. 1387-1390 Full Text: PDF (49 kB)
Estimation of the Energy Characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC Heterojunctions
S. Yu. Davydov, A. A. Lebedev, and O. V. Posrednik
pp. 1391-1393 Full Text: PDF (48 kB)
Measurement of Micrometer Diffusion Lengths by Nuclear Spectrometry
N. B. Strokan, A. M. Ivanov, A. A. Lebedev, M. Syväjärvi, and R. Yakimova
pp. 1394-1398 Full Text: PDF (68 kB)
Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy
D. I. Kryzhkov, N. A. Sobolev, B. A. Andreev, D. V. Denisov, Z. F. Krasil'nik, and E. I. Shek
pp. 1399-1402 Full Text: PDF (53 kB)
Electrical Properties of n-GaN/p-SiC Heterojunctions
O. Yu. Ledyaev, A. M. Strel'chuk, A. N. Kuznetsov, N. V. Seredova, A. S. Zubrilov, A. A. Volkova, A. E. Nikolaev, and A. A. Lebedev
pp. 1403-1405 Full Text: PDF (51 kB)
Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se2 Heterostructures and Exposed to gamma-ray Radiation
V. V. Emtsev, Yu. A. Nikolaev, D. S. Poloskin, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and M. V. Yakushev
pp. 1406-1409 Full Text: PDF (78 kB)
LOW-DIMENSIONAL SYSTEMS
The Tail of Localized States in the Band Gap of the Quantum Well in the In0.2Ga0.8N/GaN System and Its Effect on the Laser-Excited Photoluminescence Spectrum
M. A. Jacobson, D. K. Nelson, O. V. Konstantinov, and A. V. Matveentsev
pp. 1410-1414 Full Text: PDF (69 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-µm Spectral Region
L. Ya. Karachinsky, T. Kettler, N. Yu. Gordeev, I. I. Novikov, M. V. Maximov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. E. Zhukov, E. S. Semenova, A. P. Vasil'ev, V. M. Ustinov, N. N. Ledentsov, A. R. Kovsh, V. A. Shchukin, S. S. Mikhrin, A. Lochmann, O. Schulz, L. Reissmann, and D. Bimberg
pp. 1415-1419 Full Text: PDF (72 kB)
The Limiting Energy Resolution of SiC Detectors in Ion Spectrometry
N. B. Strokan, A. M. Ivanov, A. A. Lebedev, M. Syväjärvi, and R. Yakimova
pp. 1420-1425 Full Text: PDF (72 kB)
"Ideal" Static Breakdown in High-Voltage (1 kV) 4H-SiC p–n Junction Diodes with Guard Ring Termination
P. A. Ivanov, I. V. Grekhov, N. D. Il'inskaya, and T. P. Samsonova
pp. 1426-1428 Full Text: PDF (53 kB)
PERSONALIA
Yurii Vasil'evich Shmartsev (On the 75th Anniversary of His Birth)
pp. 1429-1430 Full Text: PDF (82 kB)
Boris Vasil'evich Tsarenkov (On the 75th Anniversary of His Birth)
pp. 1431-1432 Full Text: PDF (57 kB)Archived web conten
Semiconductors V. 35, I. 12
No full textSemiconductors -- December 2001
Volume 35, Issue 12, pp. 1347-1417
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Paramagnetic Defects in Silicon Carbide Crystals Irradiated with Gamma-Ray Quanta
I. V. Ilyin, E. N. Mokhov, and P. G. Baranov
pp. 1347-1354 Full Text: PDF (117 kB)
Interaction of Hydrogen with Radiation Defects in p-Si Crystals
O. V. Feklisova, N. A. Yarykin, E. B. Yakimov, and J. Weber
pp. 1355-1360 Full Text: PDF (84 kB)
Electrical Properties of the Proton-Irradiated Semi-Insulating GaAs:Cr
V. N. Brudnyi and A. I. Potapov
pp. 1361-1365 Full Text: PDF (80 kB)
Dynamics of Nonequilibrium Gratings Induced in Silicon Films by Femtosecond Laser Pulses
M. F. Galyautdinov, V. S. Lobkov, S. A. Moiseev, and I. V. Negrashov
pp. 1366-1368 Full Text: PDF (55 kB)
Radiative Recombination via Direct Optical Transitions in In1 – xGaxAs (0 <= x <= 0.16) Solid Solutions
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 1369-1371 Full Text: PDF (49 kB)
Effect of Structural Imperfection on the Spectrum of Deep Levels in 6H-SiC
A. A. Lebedev, D. V. Davydov, A. S. Tregubova, E. V. Bogdanova, M. P. Shcheglov, and M. V. Pavlenko
pp. 1372-1374 Full Text: PDF (457 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
The Contact of Metal with Silicon Carbide: Schottky Barrier Height in Relation to SiC Polytype
S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov
pp. 1375-1377 Full Text: PDF (35 kB)
LOW-DIMENSIONAL SYSTEMS
Ostwald Ripening of Quantum-Dot Nanostructures
R. D. Vengrenovich, Yu. V. Gudyma, and S. V. Yarema
pp. 1378-1382 Full Text: PDF (60 kB)
Kinetics of Exciton Photoluminescence in Low-Dimensional Silicon Structures
A. V. Sachenko, É. B. Kaganovich, É. G. Manoilov, and S. V. Svechnikov
pp. 1383-1389 Full Text: PDF (145 kB)
Renormalization of Energy Spectrum of Quantum Dots under Vibrational Resonance Conditions
A. V. Fedorov, A. V. Baranov, A. Itoh, and Y. Masumoto
pp. 1390-1397 Full Text: PDF (111 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Scanning Tunneling Spectroscopy of a-C:H and a-C:(H, Cu) Films Prepared by Magnetron Sputtering
T. K. Zvonareva, V. I. Ivanov-Omskii, V. V. Rozanov, and L. V. Sharonova
pp. 1398-1403 Full Text: PDF (78 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3–4 µm Spectral Range
T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev
pp. 1404-1417 Full Text: PDF (183 kB)Archived web conten
On the Fourier cosine—Kontorovich-Lebedev generalized convolution transforms
No full textsummary:We deal with several classes of integral transformations of the form \label {generalformula} f(x)\rightarrow D\int _{\mathbb R_+^2} \frac 1u ({\rm e}^{-u\cosh (x+v)}+{\rm e}^{-u\cosh (x-v)}) h(u)f(v) {\rm d}u {\rm d} v, where is an operator. In case is the identity operator, we obtain several operator properties on with weights for a generalized operator related to the Fourier cosine and the Kontorovich-Lebedev integral transforms. For a class of differential operators of infinite order, we prove the unitary property of these transforms on and define the inversion formula. Further, for an other class of differential operators of finite order, we apply these transformations to solve a class of integro-differential problems of generalized convolution type
Semiconductors V. 31, I. 02
No full textSemiconductors -- February 1997
Volume 31, Issue 2, pp. 97-205
Photovoltaic effect in a p-type CuInSe2/green leaf heterojunction
V. Yu. Rud', Yu. V. Rud', and V. Kh. Shpunt
Full Text: PDF (76 kB)
Electrothermal instabilities induced by a metastable electronic state in PbTe(Ga)
B. A. Akimov, N. B. Brandt, A. V. Albul, and L. I. Ryabova
Full Text: PDF (64 kB)
Resonant interaction of electrons with a high frequency electric field in two-barrier structures
I. V. Belyaeva, E. I. Golant, and A. B Pashkovskii
Full Text: PDF (168 kB)
Transport of hydrogen in films of graphite, amorphous silicon, and nickel oxide
I. E. Gabis
Full Text: PDF (89 kB)
Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures
V. V. Evstropov, Yu. V. Zhilyaev, M. Dzhumaeva, and N. Nazarov
Full Text: PDF (143 kB)
Photosensitivity of porous silicon-silicon heterostructures
E. V. Astrova, A. A. Lebedev, A. D. Remenyuk, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (62 kB)
Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C
M. V. Maksimov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop'ev, I. V. Kochnev, N. N. Ledentsov, A. V. Lunev, S. S. Ruvimov, A. V. Sakharov, A. F. Tsatsul'nikov, Yu. M. Shernyakov, Zh. I. Alferov, and D. Bimberg
Full Text: PDF (3533 kB)
Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures
I. L. Krestnikov, M. V. Maksimov, S. V. Ivanov, N. N. Ledentsov, S. V. Sorokin, A. F. Tsatsul'nikov, O. G. Lyublinskaya, B. V. Volovik, P. S. Kop'ev, and S. M. Sotomayor Torres
Full Text: PDF (91 kB)
Electron and hole spectra and selection rules for optical transitions in Ge1 – xSix/Ge heterostructures
V. Ya. Aleshkin and N. A. Bekin
Full Text: PDF (163 kB)
Mechanical properties of pure and doped InP single crystals determined under local loading
Yu. S. Boyarskaya, D. Z. Grabko, M. I. Medinskaya, and N. A. Palistrant
Full Text: PDF (183 kB)
Unusual absorption "band" in the infrared spectrum of silicon annealed at high temperature and then rapidly cooled
N. S. Zhdanovich
Full Text: PDF (46 kB)
Numerical modeling of microplasma instability
B. I. Datsko
Full Text: PDF (129 kB)
Oscillations of a ballistic hole current through uniaxially compressed semiconductor layers
N. Z. Vagidov, Z. S. Gribnikov, and A. N. Korshak
Full Text: PDF (296 kB)
Trapping of hot electrons at repulsive centers under transverse runaway conditions
Z. S. Kachlishvili, Kh. Z. Kachlishvili, and F. G. Chumburidze
Full Text: PDF (94 kB)
Characteristic features of electron photoemission from the metal in SiC-based Schottky diodes
L. A. Kosyachenko, V. M. Sklyarchuk, and E. F. Sklyarchuk
Full Text: PDF (108 kB)
Breakdown electroluminescence spectra of silicon carbide p–n junctions
M. V. Belous, A. M. Genkin, V. K. Genkina, and O. A. Guseva
Full Text: PDF (70 kB)
The dominant mechanisms of charge-carrier scattering in lead telluride
D. M. Zayachuk
Full Text: PDF (98 kB)
Formation of order in a system of localized charges in disordered layers of solid solutions of cadmium telluride and cadmium sulfide
A. P. Belyaev, V. P. Rubets, and I. P. Kalinkin
Full Text: PDF (71 kB)
Two-electron tin centers with negative correlation energy in lead chalcogenides. Determination of the Hubbard energy
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, and P. P. Seregin
Full Text: PDF (109 kB)
Effect of thermal annealing on the luminescence properties of ZnCdSe/ZnSe quantum-well structures
E. M. Dianov, P. A. Trubenko, E. É. Filimonov, and E. A. Shcherbakov
Full Text: PDF (64 kB)
Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing
E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, Z. Li, and B. Schmidt
Full Text: PDF (117 kB)
Photosensitivity of InP/CdS heterostructures in linearly polarized light
V. M. Botnaryuk, L. V. Gorchak, V. N. Pleshka, V. Yu. Rud', and Yu. V. Rud'
Full Text: PDF (80 kB)
Photoelectric properties of porous and single-crystal silicon heterocontacts
V. Yu. Rud' and Yu. V. Rud'
Full Text: PDF (76 kB)
Photoluminescence of anodized layers of CdSiAs2
A. A. Lebedev, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (58 kB)
Photoluminescence of anodized silicon carbide
V. F. Agekyan, Yu. A. Stepanov, A. A. Lebedev, A. A. Lebedev, and Yu. V. Rud'
Full Text: PDF (48 kB)
Semiconductors-97: Third Russian Conference on Semiconductor Physics
Full Text: PDF (34 kB)Archived web conten
JETP Letters V. 76, I. 09
No full textJETP Letters -- November 10, 2002
Volume 76, Issue 9, pp. 545-589
FIELDS, PARTICLES, AND NUCLEI
Improved Limits on beta– and beta–beta– Decays of 48Ca
A. Bakalyarov, A. Balysh, A. S. Barabash, P. Benes, Ch. Briançon, V. Brudanin, P. Cermák, V. Egorov, F. Hubert, Ph. Hubert, N. A. Korolev, V. N. Kosjakov, A. Kovalik, N. A. Lebedev, V. I. Lebedev, A. F. Novgorodov, N. I. Rukhadze, N. I. Stekl, V. V. Timkin, I. E. Veleshko, Ts. Vylov, and V. I. Umatov
pp. 545-547 Full Text: PDF (41 kB)
NONLINEAR DYNAMICS
Ionization Spectrum Transformation and Compression of Powerful Femtosecond Laser Pulses in Experiments on the Propagation in Gas-Filled Dielectric Capillaries
A. A. Babin, D. V. Kartashov, A. M. Kiselev, V. V. Lozhkarev, A. M. Sergeev, A. A. Solodov, and A. N. Stepanov
pp. 548-552 Full Text: PDF (63 kB)
CONDENSED MATTER
On the Theory of Boson Peak in Glasses
V. L. Gurevich, D. A. Parshin, and H. R. Schober
pp. 553-557 Full Text: PDF (76 kB)
Alternative Approach for Evaluation of Mössbauer Spectra of Nanostructured Ferromagnetic Alloys within Generalized Two-Level Relaxation Model
M. A. Chuev, O. Hupe, A. M. Afanas'ev, H. Bremers, and J. Hesse
pp. 558-562 Full Text: PDF (70 kB)
Multicomponent Dense Electron Gas as a Model of Si MOSFET
S. V. Iordanski and A. Kashuba
pp. 563-567 Full Text: PDF (72 kB)
Steps on Current–Voltage Characteristics of a Silicon Quantum Dot Covered by Natural Oxide
S. V. Vyshenski, U. Zeitler, and R. J. Haug
pp. 568-571 Full Text: PDF (50 kB)
Anomalously High Raman Scattering Cross Section for Carbon–Carbon Vibrations in trans-Nanopolyacetylene
D. Yu. Paraschuk, I. V. Golovnin, A. G. Smekhova, and V. M. Kobryanskii
pp. 572-574 Full Text: PDF (47 kB)
Effect of Screening by Two-Dimensional Charge Carriers on the Binding Energy of Excitonic States in GaAs/AlGaAs Quantum Wells
S. I. Gubarev, O. V. Volkov, V. A. Koval'skii, D. V. Kulakovskii, and I. V. Kukushkin
pp. 575-578 Full Text: PDF (69 kB)
Boundary Conditions to the Ginzburg–Landau Equations at the Twinning Plane in a (d + s) Superconductor
E. A. Shapoval
pp. 579-583 Full Text: PDF (79 kB)
MISCELLANEOUS
Transmission Capability of a Sequential Relativistic Quantum Communication Channel with Limited Observation Time
S. N. Molotkov
pp. 584-589 Full Text: PDF (69 kB)Archived web conten
Semiconductors V. 38, I. 02
No full textSemiconductors -- February 2004
Volume 38, Issue 2, pp. 125-244
REVIEW
Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films
A. A. Lebedev, A. M. Ivanov, and N. B. Strokan
pp. 125-147 Full Text: PDF (255 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Molecular-Beam Epitaxy Doping of Gallium Nitride with Magnesium from Ammonia
A. A. Vorob'ev, V. V. Korablev, and S. Yu. Karpov
pp. 148-149 Full Text: PDF (33 kB)
A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum
S. Yu. Davydov, A. A. Lebedev, N. S. Savkina, M. Syvajarvi, and R. Yakimova
pp. 150-152 Full Text: PDF (39 kB)
Adsorption of Solvated Hydrosulfide Ions at a GaAs(100) Surface: The Role of a Solvent in Surface Structure Modification
M. V. Lebedev, Th. Mayer, and W. Jaegermann
pp. 153-160 Full Text: PDF (130 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Current–Voltage Characteristics of MnIn2S4 and MnGa2S4 Single Crystals
N. N. Niftiev and O. B. Tagiev
pp. 161-162 Full Text: PDF (33 kB)
Electrical Properties of MnIn2S4 Single Crystals
N. N. Niftiev
pp. 163-164 Full Text: PDF (38 kB)
Photosensitive Structures Based on the Compound AgIn11S17
I. V. Bodnar', V. Yu. Rud', and Yu. V. Rud'
pp. 165-168 Full Text: PDF (58 kB)
Magnetic Properties of Germanium-Doped Cadmium Telluride
Yu. V. Shaldin, I. Warchulska, and Yu. M. Ivanov
pp. 169-174 Full Text: PDF (107 kB)
Nonlinearity of the Piezoresistive Effect in Polycrystalline Silicon Films
V. A. Gridchin and V. M. Lubimsky
pp. 175-181 Full Text: PDF (82 kB)
Impurity States of Tin in Bi2Te3 – xSex (x = 0.06, 0.12) Solid Solutions
M. K. Zhitinskaya, S. A. Nemov, T. E. Svechnikova, and E. Müller
pp. 182-184 Full Text: PDF (61 kB)
Observation of the Bose Condensation of Cooper Pairs in (Pb1 – xSnx)1 – zInzTe Semiconductor Solid Solutions
S. A. Nemov, P. P. Seregin, V. P. Volkov, N. P. Seregin, and D. V. Shamshur
pp. 185-188 Full Text: PDF (52 kB)
Substitutional 3d Impurities in Cubic Silicon Carbide
I. I. Parfenova
pp. 189-191 Full Text: PDF (39 kB)
The Nature of Low-Temperature Hysteresis of Hopping Magnetoresistance in Compensated Ge:Ga in the Vicinity of the Metal–Insulator Transition
S. V. Egorov, A. G. Zabrodskii, and R. V. Parfen'ev
pp. 192-196 Full Text: PDF (75 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Structures Based on Cu(Ag)InnSm Semiconductor Compounds
I. V. Bodnar', V. A. Polubok, V. Yu. Rud', Yu. V. Rud', and M. S. Serginov
pp. 197-201 Full Text: PDF (78 kB)
LOW-DIMENSIONAL SYSTEMS
Phonon Scattering of Quasi-Two-Dimensional Electrons in GaAs/AlxGa1 – xAs Superlattices
S. I. Borisenko
pp. 202-208 Full Text: PDF (81 kB)
Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots
T. V. Bezyazychnaya, V. M. Zelenkovskii, G. I. Ryabtsev, and M. M. Sobolev
pp. 209-212 Full Text: PDF (63 kB)
Normal-Incidence Responsivity of MOCVD-Grown Multiple Quantum Well Structures
V. B. Kulikov, G. H. Avetisyan, L. M. Vasilevskaya, I. D. Zalevskii, I. V. Budkin, and A. A. Padalitsa
pp. 213-216 Full Text: PDF (60 kB)
Energy Structure of A+ Centers in Quantum Wells
N. S. Averkiev, A. E. Zhukov, Yu. L. Ivanov, P. V. Petrov, K. S. Romanov, A. A. Tonkikh, V. M. Ustinov, and G. E. Tsyrlin
pp. 217-220 Full Text: PDF (57 kB)
TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films
V. P. Afanasiev, A. S. Gudovskikh, A. Z. Kazak-Kazakevich, A. P. Sazanov, I. N. Trapeznikova, and E. I. Terukov
pp. 221-224 Full Text: PDF (174 kB)
Spectroscopy of Excitonic Polaritons in Strained II–VI Semiconductor Structures with Wide Quantum Wells
S. A. Markov, R. P. Seisyan, and V. A. Kosobukin
pp. 225-231 Full Text: PDF (100 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Ultrafast Electron Drift in Field-Effect Semiconductor Structures with a Sectioned Channel
V. A. Gergel', Yu. V. Gulyaev, A. P. Zelenyi, and M. N. Yakupov
pp. 232-236 Full Text: PDF (72 kB)
Experimental Study of SiC p–i–n Diodes in the 3-cm Range
K. V. Vasilevskii, P. B. Gamuletskaya, A. V. Kirillov, A. A. Lebedev, L. P. Romanov, and V. A. Smirnov
pp. 237-238 Full Text: PDF (39 kB)
Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers
A. A. Afonenko, V. Ya. Aleshkin, and A. A. Dubinov
pp. 239-242 Full Text: PDF (56 kB)
PERSONALIA
Vitalii Ivanovich Stafeev (on his 75th birthday)
pp. 243-244 Full Text: PDF (22 kB)Archived web conten
Semiconductors V. 34, I. 01
No full textSemiconductors -- January 2000
Volume 34, Issue 1, pp. 1-121
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Holmium Redistribution upon Solid-Phase Epitaxial Crystallization of Amorphized Silicon Layers
O. V. Aleksandrov, Yu. A. Nikolaev, and N. A. Sobolev
pp. 1-5 Full Text: PDF (64 kB)
Elastic Strain and Composition of Self-Assembled GeSi Nanoislands on Si(001)
N. V. Vostokov, S. A. Gusev, I. V. Dolgov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, and D. O. Filatov
pp. 6-10 Full Text: PDF (194 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Emission Associated with Extended Defects in Epitaxial ZnTe/GaAs Layers and Multilayer Structures
E. F. Venger, Yu. G. Sadof'ev, G. N. Semenova, N. E. Korsunskaya, V. P. Klad'ko, M. P. Semtsiv, and L. V. Borkovskaya
pp. 11-16 Full Text: PDF (82 kB)
Evolution of Photoluminescence Spectra of Stoichiometric CdTe: Dependence on the Purity of Starting Components
A. V. Kvit, Yu. V. Klevkov, S. A. Medvedev, V. S. Bagaev, A. V. Perestoronin, and A. F. Plotnikov
pp. 17-20 Full Text: PDF (58 kB)
Formation of Photoluminescence Centers During Annealing of SiO2 Layers Implanted with Ge Ions
G. A. Kachurin, L. Rebohle, I. E. Tyschenko, V. A. Volodin, M. Voelskow, W. Skorupa, and H. Froeb
pp. 21-26 Full Text: PDF (90 kB)
Special Features of Electrical Activation of 28Si in Single-Crystal and Epitaxial GaAs Subjected to Rapid Thermal Annealing
V. M. Ardyshev, M. V. Ardyshev, and S. S. Khludkov
pp. 27-31 Full Text: PDF (63 kB)
Electrophysical Properties of Hg1–xCdxTe Crystals under Hydrostatic Pressure
I. V. Virt, V. D. Prozorovskii, and D. I. Tsyutsyura
pp. 32-34 Full Text: PDF (49 kB)
Band Structure and Spatial Charge Distribution in AlxGa1–xN
V. G. Deibuk, A. V. Voznyi, and M. M. Sletov
pp. 35-39 Full Text: PDF (178 kB)
Field Dependence of the Rate of Thermal Emission of Holes from the VGaSAs Complex in Gallium Arsenide
S. V. Bulyarskii, N. S. Grushko, and A. V. Zhukov
pp. 40-44 Full Text: PDF (74 kB)
Electron Spin Resonance in the Vicinity of Metal–Insulator Transition in Compensated n-Ge:As
A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek
pp. 45-55 Full Text: PDF (147 kB)
SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES
Ellipsometric Study of Ultrathin AlxGa1–xAs Layers
M. V. Sukhorukova, I. A. Skorokhodova, and V. P. Khvostikov
pp. 56-60 Full Text: PDF (82 kB)
Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering
V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Bolotov, and V. A. Sachkov
pp. 61-66 Full Text: PDF (87 kB)
Dynamic Strain-Sensitive Characteristics of the Schottky-Barrier Diodes under a Pulsed Uniform Pressure
O. O. Mamatkarimov, S. Z. Zainabidinov, A. Abduraimov, R. Kh. Khamidov, and U. A. Tuichiev
pp. 67-69 Full Text: PDF (49 kB)
Effect of the Insulator–Gallium Arsenide Boundary on the Behavior of Silicon in the Course of Radiation Annealing
V. M. Ardyshev, M. V. Ardyshev, and S. S. Khludkov
pp. 70-72 Full Text: PDF (48 kB)
Temperature Dependence of Residual Stress in Epitaxial GaAs/Si(100) Films Determined from Photoreflectance Spectroscopy Data
R. V. Kuz'menko, A. V. Ganzha, O. V. Bochurova, É. P. Domashevskaya, J. Schreiber, S. Hildebrandt, S. Mo, E. Peiner, and A. Schlachetzki
pp. 73-80 Full Text: PDF (102 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Energy Distribution of Localized States in Amorphous Hydrogenated Silicon
K. V. Kougiya, E. I. Terukov, and I. N. Trapeznikova
pp. 81-86 Full Text: PDF (79 kB)
Modifications of the Structure and Electrical Parameters of the Films of Amorphous Hydrogenated Silicon Implanted with Si+ Ions
O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, I. N. Petrov, É. P. Domashevskaya, and V. A. Terekhov
pp. 87-91 Full Text: PDF (68 kB)
The Influence of Local Surroundings of Er Atoms on the Kinetics of Decay of Er Photoluminescence in Amorphous Hydrogenated Silicon
E. I. Terukov, V. Kh. Kudoyarova, O. I. Kon'kov, E. A. Konstantinova, B. V. Kamenev, and V. Yu. Timoshenko
pp. 92-94 Full Text: PDF (48 kB)
Crystal–Glass Phase Transition Induced by Pulses of Electric Field in Chalcogenide Semiconductors
É. A. Lebedev, K. D. Tséndin, and L. P. Kazakova
pp. 95-97 Full Text: PDF (40 kB)
Growth of a-C:H and a-C:H Films Produced by Magnetron Sputtering
T. K. Zvonareva, V. I. Ivanov-Omskii, A. V. Nashchekin, and L. V. Sharonova
pp. 98-103 Full Text: PDF (330 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Light Emitting Diodes for the Spectral Range of lambda = 3.3–4.3µm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 104-107 Full Text: PDF (74 kB)
Current Transport in the Me–n–n+ Schottky–Barrier Structures
N. A. Torkhov and S. V. Eremeev
pp. 108-114 Full Text: PDF (100 kB)
Capacitance Measurements for Diodes in the Case of Strong Dependence of the Diode-Base Series Resistance on the Applied Voltage
A. A. Lebedev, Jr, A. A. Lebedev[dagger], and D. V. Davydov
pp. 115-118 Full Text: PDF (66 kB)
A Spatially Single-Mode Laser for a Range of 1.25–1.28µm on the Basis of InAs Quantum Dots on a GaAs Substrate
S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I. N. Kayander, E. Yu. Kondrat'eva, D. A. Livshits, I. S. Tarasov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, D. Bimberg, and Zh. I. Alferov
pp. 119-121 Full Text: PDF (55 kB)Archived web conten
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