764 research outputs found
Optimization Of The As-deposited 1.54 μm Photoluminescence Intensity In A-siox : H〈er〉
No full textErbium-doped a-Si:H has Er3+-related photoluminescence (PL) at ∼1.54 μm (∼0.8 eV). This emission is an intra-4f level transition of the Er3+ ion, which can be increased by adding O. In this paper we present a study of the dependence of the Er3+ luminescence on Er and O concentration ([Er] and [O]) in a-SiOx:H. Samples were prepared by rf-sputtering from a Si target partially covered by small erbium platelets in an Ar + H2 + O2 plasma. The maximum Er3+ luminescence occurs when 10 ≤ [O]/[Er] ≤ 40. Up to 3 O atoms form the Er coordination shell. The extra O increases the excitation of the Er3+ ions. When [O] increases and the density of states at mid-gap becomes larger than [Er], the Er3+ excitation rate decreases. In optimized samples the temperature quenching is less than a factor 2 from 15 to 300 K. The data allow us to conclude that: (a) Efficient room temperature Er3+ PL can be obtained from as-deposited a-SiOx:H(Er). (b) The role of O in a-SiOx:H(Er) is more than just providing non-centrosymmetric environments for Er3+. It also increases the Er3+ excitation rate. © 2000 Elsevier Science B.V. All rights reserved.266-269 A603607Pomrenke, G.S., Klein, P.B., Langer, D.W., (1993) Rare Earth Doped Semiconductors, 301. , Mater. Res. Soc. Symp. Proc., MRS, Pittsburgh, PACoffa, S., Polman, A., Schwartz, R.N., (1996) Rare Earth Doped Semiconductors II, 422. , Mater. Res. Soc. Symp. Proc., MRS, Pittsburgh, PAJudd, B.R., (1962) Phys. Rev., 127, p. 750Michel, J., Ferrante, J.L.B.R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.H., Poate, J.M., Kimerling, L.C., (1991) J. Appl. Phys., 70, p. 2672Adler, D.L., Jacobson, D.C., Eaglesham, D.J., Marcus, M.A., Benton, J.L., Poate, J.M., Citrin, P.H., (1992) Appl. Phys. Lett., 61, p. 2181Polman, A., Hoven, G.N.V.D., Custer, J.S., Shin, J.H., Serna, R., Alkemade, P.F.A., (1995) J. Appl. Phys., 77, p. 1256Oesterreich, T., Swialtowski, C., Broser, I., (1990) Appl. Phys. Lett., 56, p. 446Bresler, M.S., Gusev, O.B., Kudoyarova, V.K., Kuznetsov, A.N., Pak, P.E., Terukov, E.I., Yassievich, I.N., Sturm, A., (1995) Appl. Phys. Lett., 67, p. 3599Zanatta, A.R., Nunes, L.A.O., Tessler, L.R., (1997) Appl. Phys. Lett., 70, p. 511Tessler, L.R., Zanatta, A.R., (1998) J. Non-Cryst. Solids, 227-230, p. 399Tessler, L.R., Iñiguez, A.C., (1999) Amorphous and Microcrystalline Silicon Technology - 1998, 507, p. 279. , S. Wagner, M. Hack, H.M. Branz, R. Schroop, I. Shimizu (Eds.), Mater. Res. Soc. Symp. Proc., MRS, Pittsburgh, PAKudoyarova, V.K., Kuznetsov, A.N., Terukov, E.I., Gusev, O.B., Kudryavtsev, Y.A., Ber, B.Y., Gusinskii, G.M., Kuehne, D., (1998) Semiconductors, 32, p. 1234Masterov, V.F., Nasredinov, F.S., Seregin, P.P., Kudoyarova, V.K., Kuznetsov, A.N., Terukov, E.I., (1998) Appl. Phys. Lett., 72, p. 728Piamonteze, C., Iñiguez, A.C., Tessler, L.R., Alves, M.C.M., Tolentino, H., (1998) Phys. Rev. Lett., 81, p. 4652Terrasi, A., Priolo, F., Franz, G., Coffa, S., D'Acapito, F., Mobilio, S., (1999) J. Lumin., 80, p. 363Fuhs, W., Ulber, I., Weiser, G., Bresler, M.S., Gusev, O.B., Kuznetsov, A.N., Kudoyarova, V.K., Yassievich, I.N., (1997) Phys. Rev. B, 56, p. 9545Shin, J.H., Serna, R., Van Der Hoven, G.N., Polman, A., Van Sark, W.G.J., Vredenberg, A.M., (1996) Appl. Phys. Lett., 68, p. 99
Temperature Independent Er3+ Photoluminescence Lifetime In A-si:h<er> And A-siox:h<er>
No full textThe photoluminescence (PL) lifetime of Er3+ in a-Si:H<Er> and a-SiOx:H<Er> was measured between 15 and 300K in a set of samples containing ∼1 at.% Er and up to ∼10 at.% O. The room temperature PL intensity increased and the temperature quenching decreased with O content. The maximum PL intensity at 15K, however, is obtained from samples with no intentional oxygen added. The PL lifetimes were obtained using the quadrature frequency resolved spectroscopy (QFRS) technique. The QFRS signal was well fitted supposing two lifetimes, the fast decay in the 20-150μs range and the slow decay in the 200-830μs range, consistently increasing with the O content of the samples. For all samples both the fast and the slow lifetimes did not depend on the temperature within experimental incertitude. Our results are interpreted supposing two different lattice sites for Er 3+ in the hosts. Moreover, the de-excitation of the Er3+ ions by multiple phonon emission is negligible in this class of materials. © 2003 Published by Elsiver B.V.10501/03/15165168(2001) Mater. Sci. Eng. B, 81Tessler, L.R., (1999) Braz. J. Phys., 29, p. 616Bressler, M.S., Gusev, O.B., Kudoyarova, V.Kh., Kuznetsov, A.N., Pak, P.E., Terukov, E.I., Yassievich, I.N., Sturm, A., (1995) Appl. Phys. Lett., 67, p. 3599Fuhs, W., Ulber, I., Weiser, G., Bresler, M.S., Gusev, O.B., Kusnetsov, A.N., Kudoyarova, V.K., Yassievich, I.N., (1997) Phys. Rev. B, 56, p. 9545Kuhne, H., Weiser, G., Terukov, E.I., Kusnetsov, A.N., Kudoyarova, V.K., (1999) J. Appl. Phys., 86, p. 896Bresler, M.S., Gusev, O.B., Sobolev, N.A., Terukov, E.I., Yassievich, I.N., Zakharchenya, B.P., Gregorkevich, T., (1999) Phys. Sol. State, 41, p. 770Tessler, L.R., Iñiguez, A.C., (1998) Mater. Res. Soc. Symp. Proc., MRS, 507, p. 279. , S. Wagner, M. Hack, H.M. Branz, R. Schroop, I. Shimizu (Eds.), Amorphous and Microcrystalline Silicon Technology, Pittsburgh, PADepinna, S.P., Dunstan, D.J., (1984) Phil. Mag. B, 50, p. 579Tessler, L.R., Iñiguez, A.C., (1998) Mat. Res. Soc. Proc., 507, pp. 505-517. , S. Wagner, M. Hack, H.M. Branz, R. Schroop, I. Shimizu (Eds.), Amorphous and Microcrystalline Silicon Technology, PittsburghKamenev, B.V., Timoshenko, V.Y., Konstantinova, E.A., Kudoyarova, V.K., Terukov, E.I., Kashkarov, P.K., (2002) J. Non-cryst. Sol., 299, p. 668Van Den Hoven, G.N., Shin, J.H., Polman, A., Lombardo, S., Campisano, S.U., (1995) J. Appl. Phys., 78, p. 2642Piamonteze, C., Iñiguez, A.C., Tessler, L.R., Martins, M.C., Tolentino, H., (1998) Phys. Rev. Lett., 81, p. 4652Terukov, E.I., Undalov, Yu.K., Kudoyarova, V.Kh., Koughia, K.V., Kleider, J.P., Gueunier, M.E., Meaudre, R., (2002) J. Non-cryst. Sol., 299-302, p. 699Shin, J.H., Serna, R., Van Den Hoven, G.N., Polman, A., Van Sark, W.G.J.H.M., Vredenberg, A.M., (1996) Appl. Phys. Lett., 68, p. 997Street, R.A., (1991) Hydrogenated Amorphous Silicon, , Cambridge University Press, Cambridg
Time-resolved Photoluminescence In A-sinx:h〈nd〉planar Waveguides: Evidence For Stimulated Emission
No full textWe performed lifetime measurements on the 1128 nmNd3+ emission from a neodymium-doped amorphous hydrogenated silicon sub-nitride (a SiN x:H〈Nd〉) planar waveguide. The 1.5 μm thick sample was prepared by reactive rf-sputtering. Lifetime measurements were performed exciting with a multiline Ar+ laser. The sample temperature was varied between 25 and 300 K, and the excitation power between 0.2 and 8 kW/cm2. In all measurement conditions the luminescence decay can be expressed by two exponentials. The fast decay has a lifetime between 40 and 60 μs and the slow decay has a lifetime between 1 and 3 ms. The excitation photon energy is not resonant with any of the Nd3+ transitions, consequently the excitation energy must be transferred from the host nitride to the Nd3+ ions. The fast lifetime is almost independent of the temperature, indicating that it is related to the excitation transfer process. As the temperature increases the probability of carrier recombination through processes that do not excite Nd3+ ions increases. The slow lifetime is associated with the intrinsic Nd3+ lifetime. It is shorter at low temperatures and high excitation rates. At 26 K, it decreases by a factor 2 when the excitation power goes from 2 to 8 kW/cm2. The lifetime decrease with the excitation power is associated with the onset of stimulated emission from the Nd3+ ions. © 2004 Elsevier B.V. All rights reserved.275773775(2003) Mater. Sci. Eng. B, 105Weber, M.J., (2001) Handbook of Lasers, , CRC Press Boca RatonHüfner, S., (1978) Optical Spectra in Transparent Rare Earth Compounds, , Academic Press New YorkDieke, G.H., (1968) Spectra and Energy Levels of Rare Earth Ions in Crystals, , Interscience Publishers New YorkBiggemann, D., Tessler, L.R., (2003) Mat. Sci. and Eng. B, 105, p. 188Tessler, L.R., Biggeman, D., (2005) Optical Materials, , these ProceedingsTessler, L.R., Biggemann, D., (2003) Mater. Sci. Eng. B, 105, p. 165Van Den Hoven, G.N., Shin, J.H., Polman, A., Lombardo, S., Campisano, S.U., (1995) J. Appl. Phys., 78, p. 2642Bresler, M.S., Gusev, O.B., Terukov, E.I., Yassievich, I.N., Zacharchenya, B.P., Emel'Yanov, V.I., Kamenev, B.V., Timoshenko, V.Yu., (2001) Mater. Sci. Eng. B, 81, p. 5
Photoluminescence Of Er-doped Silicon Nanoparticles From Sputtered Sio X Thin Films
No full textWe present a study of the Er3+ photoluminescence from Er-doped thin SiOx films prepared by reactive RF sputtering from a silicon target partially covered by metallic erbium platelets in an Ar + O2 atmosphere. Annealing at 1250 °C induces the formation of silicon nanocrystals and modifies the Er3+ luminescence spectrum due to changes in the Er3+ environment. The photoluminescence efficiency decreases by two orders of magnitude with nanoparticle formation. This decrease may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix, to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples. © 2005 Elsevier B.V. All rights reserved.2806/07/15842845Pacifici, D., Franzò, G., Priolo, F., Iacona, F., Dal Negro, L., (2003) Phys. Rev. B, 67, p. 245301Kenyon, A.J., Chryssou, C.E., Pitt, C.W., Shimizu-Iwayama, T., Hole, D.E., Sharma, N., Humphreys, C.J., (2002) J. Appl. Phys., 91, p. 367Kik, P.G., Brongersma, M.L., Polman, A., (2000) Appl. Phys. Lett., 76, p. 2325Makimura, T., Kondo, K., Uematsu, H., Li, C., Murakami, K., (2003) Appl. Phys. Lett., 83, p. 5422Franzò, G., Boninelli, S., Pacifici, D., Priolo, F., Iaconna, F., Bongiorno, C., (2003) Appl. Phys. Lett., 82, p. 3871Chen, C.Y., Chen, W.D., Song, S.F., Xu, Z.J., Liao, X.B., Li, G.H., Ding, K., (2003) J. Appl. Phys., 94, p. 5599D. Mustafa, L.R. Tessler, unpublishedTessler, L.R., Iñiguez, A.C., (2000) J. Non-Cryst. Solids, 266-269, p. 603Tessler, L.R., Piamonteze, C., Martins Alves, M.C., Tolentino, H., (2000) J. Non-cryst. Solids, 266-269, p. 59
Evolution Of The Er Environment In A-si:h Under Annealing: Ion Implantation Versus Co-deposition
No full textThe evolution of the chemical environment of Er in hydrogenated amorphous silicon (a-Si:H) prepared by cosputtering and by ion implantation under cumulative annealing steps was studied by extended X-ray absorption fine structure (EXAFS) at the Er LIII-edge. Samples were prepared by rf-sputtering. In one sample small chunks of metallic Er were attached to the Si target during deposition, resulting in an Er concentration [Er]/[Si] ∼ 0.2 at.%. In the other sample a similar Er concentration was ion-implanted. Annealing was performed in 20 min steps between 215 and 1100°C. In the as-co-sputtered sample (which had 7.6 at.% [O]/[Si] intentionally added to improve the Er3+ luminescence) the Er environment consists of a 3-fold co-ordinated oxygen shell. It smoothly evolves towards an Er2O3-like 6-fold co-ordinated shell. In the as-implanted sample the Er environment consists of a 10-fold co-ordinated Si shell. By annealing to 450°C the Er neighborhood evolved towards a smaller coordination. Above this temperature the Er coordination increased, indicating the formation of ErSix domains around the Er atoms. Only at 750°C the Er coordination starts to decrease, due to the onset of oxidation. The Er oxidation is completed between 850 and 1100°C. © 2000 Elsevier Science B.V. All rights reserved.266-269 A598602Agrawal, G.P., (1997) Fiber-Optic Communication Systems, Second Ed., , Willey, New YorkJudd, B.R., (1962) Phys. Rev., 127, p. 750Adler, D.L., Jacobson, D.C., Eaglesham, D.J., Marcus, M.A., Benton, J.L., Poate, J.M., Citrin, P.H., (1992) Appl. Phys. Lett., 61, p. 2181Moon, R.M., Koehler, W.C., Child, H.R., Raubenheimer, L.J., (1968) Phys. Rev., 176, p. 722Mayer, I., Felner, I., (1973) J. Solid State Chem., 7, p. 292Terrasi, A., Franz, G., Coffa, S., Priolo, F., 'Acapito, F.D., Mobilio, S., (1997) Appl. Phys. Lett., 70, p. 1712Bresler, M.S., Gusev, O.B., Kudoyarova, V.K., Kuznetsov, A.N., Pak, P.E., Terukov, E.I., Yassievich, I.N., Sturm, A., (1995) Appl. Phys. Lett., 67, p. 3599Shin, J.H., Serna, R., Hoven, G.N.V.D., Polman, A., Sark, W.G.J.H.M.V., Vredenberg, A.M., (1996) Appl. Phys. Lett., 68, p. 997Tessler, L.R., Iñiguez, A.C., (1999) Amorphous and Macrocrystalline Silicon Technology - 1998, 507, p. 279. , S. Wagner, M. Hack, H.M. Branz, R. Schroop, I. Shimizu (Eds.), Mater. Res. Soc. Symp. Proc., MRS, PittsburghMasterov, V.F., Nasredinov, F.S., Seregin, P.P., Kudoyarova, V.K., Kuznetsov, A.N., Terukov, E.I., (1998) Appl. Phys. Lett., 72, p. 728Piamonteze, C., Iñiguez, A.C., Tessler, L.R., Alves, M.C.M., Tolentino, H., (1998) Phys. Rev. Lett., 81, p. 4652Zanatta, A.R., Nunes, L.A.O., Tessler, L.R., (1997) Appl. Phys. Lett., 70, p. 511Tessler, L.R., Zanatta, A.R., (1998) J. Non-Cryst. Solids, 227-230, p. 399Tolentino, H., Cezar, J.C., Cruz, D.Z., Compagnon-Cailhol, V., Tamura, E., Alves, M.C.M., (1998) J. Synchrotron Rad., 5, p. 521Piamonteze, C., Tessler, L.R., Alves, M.C.M., Tolentino, H., (1999) Braz. J. Phys., 29, p. 756Lytle, F.W., Sayers, D.E., Stern, E.A., (1989) Physica B, 158, p. 701Wahl, U., Vantomme, A., Wachter, J.D., Moons, R., Langouche, G., Marques, J.G., (1997) Phys. Rev. Lett., 79, p. 206
Optical Gain In A-sinx:h〈nd〉
No full textWe report optical gain measurements in neodymium-doped amorphous hydrogenated silicon sub-nitride (a-SiNx:H〈Nd〉) planar waveguides. Samples (1.5 μm thick) were prepared by reactive rf-sputtering from a silicon target partially covered by metallic neodymium platelets using an Ar + N2 + H2 atmosphere. The substrates are oxidized H〈100〉 silicon wafers that are cleaved to define highly parallel flat waveguide faces. At low temperatures, the photoluminescence spectrum measured at the waveguide edge shows an increased and narrowed peak at 1130 nm when compared with the spectrum taken in the direction of the guide top surface. The guided signal presents supralinear intensity dependence. An optical gain of 270 ± 10 cm-1 was determined using the variable slit method exciting with a CW multiline Ar+ laser at 8 kW/cm2. The photon energy of the Ar+ laser lines is not resonant with any of the Nd3+ transitions, indicating that the excitation is efficiently transferred from the host to the rare earth ions. This result indicates that a-SiNx:H〈Nd〉 can be used as an active optical medium. © 2004 Elsevier B.V. All rights reserved.275769772Pavesi, L., Dal Negro, L., Mazzoleni, C., Franzò, G., Priolo, F., (2000) Nature, 408, p. 440Rare earth doped materials for photonics (2003) Mater. Sci. Eng. B, 105Han, H.S., Seo, S.Y., Shin, J.H., (2001) Appl. Phys. Lett., 79, p. 4568Biggemann, D., Tessler, L.R., (2003) Mat. Sci. and Eng. B, 105, p. 188Weber, M.J., (2001) Handbook of Lasers, , CRC Press Boca RatonHüfner, S., (1978) Optical Spectra in Transparent Rare Earth Compounds, , Academic Press New YorkDieke, G.H., (1968) Spectra and Energy Levels of Rare Earth Ions in Crystals, , Interscience Publishers New YorkShaklee, K.L., Nahaory, R.E., Leheny, R.F., (1973) J. Lumin., 7, p. 284Koechner, W., (1999) Solid State Laser Engineering, , Fifth Ed. Springer Berli
Erbium Environment In Silicon Nanoparticles
No full textThe Er environment in two sets of Er-doped Si nanoparticles (np) with nominal Er concentrations of 1-2 at.% was measured by EXAFS. Set H, with a homogeneous distribution of Er atoms, consist of samples with average np diameters of 3.2, 5.9, and 6.4 nm. The np of set C consist of a Si core covered by an Er-rich shell, with average diameters of 26 and 22 nm, nearly an order of magnitude higher than those of set H. The Er atoms in the np are coordinated to oxygen, like in the Er(tmhd)3 organometallic precursor. In set H, both the Er coordination and the average Er-O separation increase as the average nanoparticle diameter increases from 3.2 to 6.4 nm. The results for small np are remarkably similar to those found for Er in a-Si:H〈Er〉, indicating that the lattice constraints in the np are very similar to a-Si:H. Efficient Er3+ luminescence is detected in as-prepared samples. As the particle size increases the Er environment becomes er2O3-like, as in bulk Czochralski silicon. In set C, the Er environment in both samples is similar to that in Er(tmhd)3 and in Er2O3, but the Er-O distances are larger. © 2002 Elsevier Science B.V. All rights reserved.299-302PART 1673677Agrawal, G.P., (1997) Fiber-Optic Communication Systems, second ed, , Wiley, New YorkCanham, L., (2000) Nature, 408, p. 411Tsybeskov, L., (1998) MRS Bull., 23 (4), p. 33Pomrenke, G.S., Klein, P.B., Langer, D.W., Rare earth doped semiconductors (1993) Mater. Res. Soc. Symp. Proc., 301. , MRS, Pittsburgh, PACoffa, S., Polman, A., Schwartz, R., Rare earth doped semiconductors II (1996) Mater. Res. Soc. Symp. Proc., 422. , MRS, Pittsburgh, PAZavada, J.M., Gregorkiewicz, T., Steckl, A.J., Rare earth doped semiconductors III (2001) Materials Science and Engineering B, 81Polman, A., (1997) J. Appl. Phys., 82, p. 1Namavar, F., Lu, F., Perry, C.H., Cremins, A., Kalkhoran, N., Soref, R., (1995) J. Appl. Phys., 77, p. 4813Tsybeskov, L., Duttagupta, S., Hirschman, K., Fauchet, P.M., Moore, K., Hall, D., (1997) Appl. Phys. Lett., 70, p. 1790Lopez, H.A., Fauchet, P.M., (2000) Appl. Phys. Lett., 77, p. 3704Markmann, M., Neufeld, E., Sticht, A., Brunner, K., Abstreiter, G., (1999) Appl. Phys. Lett., 75, p. 2584Tessler, L.R., (1999) Braz. J. Phys., 29, p. 616Michel, J., Ferrante, J.L.B.R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.H., Poate, J.M., Kimerling, L.C., (1991) J. Appl. Phys., 70, p. 2672Adler, D.L., Jacobson, D.C., Eaglesham, D.J., Marcus, M.A., Benton, J.L., Poate, J.M., Citrin, P.H., (1992) Appl. Phys. Lett., 61, p. 2181Littau, K., Szajowski, P., Muller, A., Kortan, A., Brus, L., (1993) J. Phys. Chem., 97, p. 1224John, J.St., Coffer, J.L., Chen, Y., Pinizzotto, R.F., (1999) J. Am. Chem. Soc., 121, p. 1888Senter, R.A., Chen, Y., Coffer, J.L., Tessler, L.R., (2001) Nano Lett., 1, p. 383John, J.St., Coffer, J.L., Chen, Y., Pinizzotto, R.F., (2000) Appl. Phys. Lett., 77, p. 1635Piamonteze, C., Iñiguez, A.C., Tessler, L.R., Alves, M.C.M., Tolentino, H., (1998) Phys. Rev. Lett., 81, p. 4652Piamonteze, C., Tessler, L.R., Tolentino, H., Alves, M.C.M., Weiser, G., Terukov, E., (2000) MRS Symp. Proc., 609, pp. A112
Appropriate Similarity Measures for Author Cocitation Analysis
No full textWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
The Origin Of Visible Photoluminescence In Low Power A-si1-xcx:h With X > 0.2
No full textPhotoluminescence decay measurements were performed in a series of a-Si1-xCx:H samples with 0 < x < 0.5 prepared in the low power regime, i.e. containing virtually no sp2 carbon. The decay is non-exponential and presents two peaks in the lifetime distribution for x > 0.2, one slow peak associated to a-Si:H-like luminescence and a fast peak that is responsible for the temperature independent visible luminescence. We conclude that the efficient temperature independent visible photoluminescence is due to a mechanism that is ineffective in a-Si:H, which we attribute to enhanced Coulomb interaction between electron and hole. © 1999 Elsevier Science Ltd. All rights reserved.1114193197Bullot, J., Schmidt, M.P., (1987) Phys. Status Solidi (b), 143, p. 345Kruangam, D., (1998) Properties of Amorphous Silicon and Its Alloys, p. 337. , T. Searle (Ed.), INSPEC, LondonRobertson, J., (1992) Phil. Mag. B, 66, p. 615Solomon, I., Schmidt, M.P., Tran-Quoc, H., (1988) Phys. Rev. B, 38, p. 9895Pereyra, I., Carreño, M.N.P., Tabacniks, M.H., Prado, R.J., Fantini, M.C.A., (1998) J. Appl. Phys., 84, p. 2371Tessler, L.R., Solomon, I., (1995) Phys. Rev. B, 52, p. 10962Boulitrop, F., Dunstan, D.J., (1983) Phys. Rev. B, 28, p. 5923Dunstan, D.J., Boulitrop, F., (1984) Phys. Rev. B, 30, p. 5945Street, R.A., (1991) Hydrogenated Amorphous Silicon, p. 279. , Cambridge University Press, CambridgeChauvet, O., Zuppiroli, L., Ardonceau, J., Solomon, I., Wang, Y.C., Davis, R.F., (1992) Mat. Sci. Forum, 83-87, p. 1201Sussmann, R.S., Ogden, R., (1981) Phil. Mag. B, 44, p. 137Bässler, H., Gailberger, M., Mahrt, R.F., Oberski, J.M., Weiser, G., (1992) Synth. Met., 49-50, p. 341Su, W.P., Schieffer, J.R., Heeger, A.J., (1979) Phys. Rev. Lett., 44, p. 1698Tessler, L.R., Cirino, L.R., (1996) Amorphous Silicon Technology-1996, MRS Symposium Proceedings-420, p. 783. , PittsburgTsang, C., Street, R.A., (1979) Phys. Rev. B, 19, p. 3027Robertson, J., (1996) Phys. Rev. B, 53, p. 16302Vasil'ev, V.A., Volkov, A.S., Musabekov, E., Terukov, E.I., Chelnokov, V.E., Chernyshov, S.V., Shernyakov, Yu.M., (1990) Sov. Phys. Semicond., 24, p. 445Sibert, W., Carius, R., Fuhs, W., Jahn, K., (1987) Phys. Stat. Sol. (b), 140, p. 311Lormes, W., Hundhausen, M., Ley, L., (1998) J. Non-Cryst Sol., 227-230, p. 57
Erbium Luminescence In A-si:h
No full textWe have prepared a-Si:H with erbium impurities by co-sputtering. Efficient photoluminescence at 1.54 μm was observed in as-deposited samples. The maximum luminescence efficiency, 17, was found for an Er/Si concentration ∼ 2 at.% in samples prepared under low cathode bias. These samples have columnar structure and have ∼ 3 at.% O/Si. Annealing under oxygen atmosphere at 300°C can increase 17 at room temperature by a factor 3 and η at 77 K by a factor 5. The optimum erbium concentration is two orders of magnitude larger than in ion implanted crystalline silicon or in glasses. Hydrogen concentration is a fundamental parameter to obtain efficient luminescence. This material is a good candidate for Er3+ based photonic devices. © 1998 Elsevier Science B.V. All rights reserved.227-230PART 1399402Green P.E., Jr., (1996) IEEE J. Selected Areas Commun., 14, p. 764Rare earth doped semiconductors (1994) Mater. Res. Soc. Symp. Proc., p. 316Rare earth doped semiconductors II (1996) Mater. Res. Soc. Symp. Proc., p. 422Polman, A., (1997) J. Appl. Phys., 82, p. 1Priolo, F., Franzò, G., Coffa, S., Polman, A., Libertino, S., Barklie, R., Carey, D., (1995) J. Appl. Phys., 78, p. 3874. , and references thereinShin, J.H., Serna, R., Van Den Hoven, G.N., Polman, A., Van Sark, W.G.J.H.M., Vredenberg, A.M., (1996) Appl. Phys. Lett., 68, p. 997Oestereich, T., Swiatowski, C., Broser, I., (1990) Appl. Phys. Lett., 56, p. 446Bressler, M.S., Gusev, O.B., Kudoyarova, V.Kh., Kuznetsov, A.N., Pak, P.E., Terukov, E.I., Yassievich, I.N., Sturm, A., (1995) Appl. Phys. Lett., 67, p. 3599Zanatta, A.R., Nunes, L.A.O., Tessler, L.R., (1997) Appl. Phys. Lett., 70, p. 511Przybylinska, H., Jantsch, W., Suprun-Belevitch, Y., Stepikhova, M., Palmetshofer, L., Hendorfer, G., Kozanecki, A., Sealy, B.J., (1996) Phys. Rev. B, 54, p. 2532Van Den Hoven, G.N., Shin, J.H., Polman, A., Lombardo, S., Campisano, S.U., (1995) J. Appl. Phys., 78, p. 2642Eaglesham, D.J., Michel, J., Fitzgerald, E.A., Jacobson, D.C., Poate, J.M., Benton, J.L., Polman, A., Kimerlingh, L.C., (1991) Appl. Phys. Lett., 48, p. 2797Miniscalco, W.J., (1991) J. Lightwave Technol., 9, p. 234Street, R.A., (1991) Hydrogenated Amorphous Silicon, , Cambridge Univ. Press, Cambridg
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