58 research outputs found
Development of new 3D pixel sensors for phase 2 upgrades at LHC
No full textWe report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considered. The paper covers TCAD simulations, as well as technological and design aspects relevant to the first batch of these 3D sensors, that is currently being fabricated at FBK on 6-inch wafers.We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50×50 or 25×100 μm2 pixel size) and extreme radiation hardness (up to a fluence of 2×1016 neq cm-2), thinner 3D sensors (~100 μm) with electrodes having narrower size (~ 5 μm) and reduced spacing (~ 30 μm) are considered. The paper covers TCAD simulations, as well as technological and design aspects relevant to the first batch of these 3D sensors, that is currently being fabricated at FBK on 6" wafers
Research Report 1: The Influence of Inflammatory Cells in the Intestine: a Step Towards Improving the Viability of Precision Cut Intestinal Slices.
No full textDe begeleider en/of auteur heeft geen toestemming gegeven tot het openbaar maken van de scriptie.
The supervisor and/or the author did not authorize public publication of the thesis.
Electrical characterization of FBK small-pitch 3D sensors after γ-ray, neutron and proton irradiations
No full textIn view of applications in the tracking detectors at the High Luminosity LHC (HL-LHC), we have developed a new generation of 3D pixel sensors featuring small-pitch (50 × 50 or 25 × 100 μ m2) and thin active layer (~ 100 μ m). Owing to the very short inter-electrode distance (~ 30 μ m), charge trapping effects can be strongly mitigated, making these sensors extremely radiation hard. However, the downscaled sensor structure also lends itself to high electric fields as the bias voltage is increased, motivating investigation of leakage current increase in order to prevent premature electrical breakdown due to impact ionization. In order to assess the characteristics of heavily irradiated samples, using 3D diodes as test devices, we have carried out a dedicated campaign that included several irradiations (γ -rays, neutrons, and protons) at different facilities. In this paper, we report on the electrical characterization of a subset of the irradiated samples, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for full depletion (hence high efficiency) also at the maximum fluence foreseen at the HL-LHC
Research Report 2: The development of an in ovo metastatic model of ovarian cancer
No full textDe begeleider en/of auteur heeft geen toestemming gegeven tot het openbaar maken van de scriptie.
The supervisor and/or the author did not authorize public publication of the thesis.
First Production of New Thin 3D Sensors for HL-LHC at FBK
No full textOwing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the 'Phase 2' High-Luminosity LHC (HL-LHC) . To this purpose, extreme radiation hardness up to the expected maximum fluence of 2 × 10(16) n(eq).cm(−)(2) must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (050×5 or 025× 10 μ m(2) cell size), thinner active region (0~ 10 \textmu m), narrower columnar electrodes (~ 5 \textmu m diameter) with reduced inter-electrode spacing (0~ 3 μ m), and very slim edges (0~ 10 μ m). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6' substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (< 1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GΩ even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the 'Phase 2' High-Luminosity LHC (HL-LHC) . To this purpose, extreme radiation hardness up to the expected maximum fluence of 2 × 10(16) n(eq).cm(−)(2) must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50 × 50 or 25 × 100 μ m(2) cell size), thinner active region (~ 100 μm), narrower columnar electrodes (~ 5 μm diameter) with reduced inter-electrode spacing (~ 30 μm), and very slim edges (~ 100 μm). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6' substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (< 1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GΩ even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations
Development of a new generation of 3D pixel sensors for HL-LHC
No full textThis paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades.This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades.This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades
Extensive winter subglacial water storage beneath the Greenland Ice Sheet
No full textThis is the final version of the article. Available from AGU via the DOI in this record.Surface meltwater that reaches the base of the Greenland Ice Sheet exerts a fundamental impact on ice flow, but observations of catchment-wide movement and distribution of subglacial water remain limited. Using radar-sounding data from two seasons, we identify the seasonal distribution of subglacial water in western Greenland. Our analysis provides evidence of widespread subglacial water storage beneath Greenland in the wintertime. The winter storage is located primarily on bedrock ridges with higher bed elevations in excess of 200 m. During the melt season water moves to the subglacial troughs. This inverse relationship with topography indicates that the material properties of the glacier bed strongly influence subglacial drainage development. Both the spatial variations in bed properties and the initial state of the subglacial hydrology system at the start of the melt season lead to differing glacier dynamical responses to surface melting across the Greenland Ice Sheet.W.C. is a recipient of the NASA Earth and
Space Science Fellowship. D.M.S. is
supported by a grant from the NASA
Cryospheric Sciences Program. H.S. is
supported by grants from the NASA
Cryospheric Sciences and Sea Level Rise
Programs. T.T.C and R.E.B are supported
by grants from National Science
Foundation (NSF) and NASA
Cryospheric Sciences. S.P. is supported
by the Natural Environment Research
Council’s Centre for Polar Observatio
Quality Control (QC) of FBK preproduction 3D Si sensors for ATLAS HL-LHC Upgrades
No full textThe challenging demands of the ATLAS High Luminosity (HL-LHC) Upgrade aim for a complete swap of new generation sensors that should cope with the ultimate radiation hardness. FBK has been one of the prime foundries to develop and fabricate such radiation-hard 3D silicon (Si) sensors. These sensors are chosen to be deployed into the innermost layer of the ATLAS Inner Tracker (ITk). Recently, a pre-production batch of 3D Si sensors of 50 × 50 μm2 pixel geometry, compatible with the full-size ITKPix (RD53B) readout chip, was fabricated. Two wafers holding temporary metal were diced at IZM, Germany, and a systematic QC test campaign was carried out at the University of Trento electronics laboratory. The paper briefly describes the 3D Si sensor design for ATLAS ITk and the required QC characterization setups. It comprises electrical tests (i.e., I-V, C-V, and I-T) of non-irradiated RD53B sensors. In addition, the study of several parametric analyses, i.e., oxide charge density, oxide thickness, inter-pixel resistance, inter-pixel capacitance, etc., are reported with the aid of Process Control Monitor (PCM) structures
Cold temperature characterization of ring triplets based on RD53A readout chip
No full textThis paper reports the Trento test setup and the cold test procedure for three triplets (ID: R4, R5, and R6) assembled with RD53A readout cheap and planar sensors. The trim and tuning of Front Ends (FE), as well as sensor I-V measurements, were made for a cold temperature (−25 ◦C) for an applied voltage (−30V for R4, −10V for R5 and R6). As a part of QC, initially, several test scans: analog, digital, threshold, ToT, noise, etc., were performed to evaluate the module response at −25 ◦C before applying a necessary tuning script to find a spatially uniform threshold distribution over the pixel matrix. Later, the crosstalk-based disconnected-bump and X-ray scans were made to check modules’ bump bonding quality and hits per pixel. Results reported here show a good agreement to a qualified triplet module, assuring the Trento cold test setup capacity for the ATLAS ITk QA/QC process
Systematics and ecology of Oligodon sublineatus Duméril, Bibron & Duméril, 1854, an endemic snake of Sri Lanka, including the designation of a lectotype
No full textThis is an open access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited. The attached file is the published version of the article.NHM Repositor
- …
