186,356 research outputs found
Comment on Stallinga, P. (2023), Residence Time vs. Adjustment Time of Carbon Dioxide in the Atmosphere
No full textThe goal of Stallinga (2023), to address confusion about CO2 "residence time" and "adjustment time," is laudable. Unfortunately, the author, himself, has confused them. Dr. Stallinga made two key errors, the second following from the first. His first and most important mistake was his claim that, "the adjustment time is never larger than the residence time." That is backward. It is easily shown that the adjustment time is much longer than the residence time, because some of the processes which reduce the residence time do not reduce the adjustment time. He also wrote that neither the residence time nor the adjustment time is "longer than about 5 years." That is correct only for the residence time. It is wrong by a full order of magnitude for the adjustment time. The adjustment time can be determined from measurements, and it is approximately fifty years
The effect of water related traps on the reliability of organic based transistors
No full textThe electrical stability of metal-insulator semiconductor (MIS) capacitors and field-effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K and is caused by an electronic trapping process. Experimental results show that water is responsible for the trapping mechanism. (c) 2006 Elsevier B.V. All rights reserved
Electronic Transport in Field Effect Transistors of Sexithiophene
No full textThe electronic conduction of thin-film field-effect-transistors (FETs) of sexithiophene was studied. In most cases the transfer curves deviate from standard FET theory; they are not linear, but follow a power law instead. These results are compared to conduction models of "variable-range hopping" and "multi-trap-and-release". The accompanying IV curves follow a Poole-Frenkel (exponential) dependence on the drain voltage. The results are explained assuming a huge density of traps. Below 200 K, the activation energy for conduction was found to be ca. 0.17 eV. The activation energies of the mobility follow the Meyer-Neldel rule. A sharp transition is seen in the behavior of the devices at around 200 K. The difference in behavior of a micro-FET and a submicron FET is shown. (C) 2004 American Institute of Physics
Author-wise bibliometric analysis based on entropy.
No full textAuthor-wise bibliometric analysis based on entropy.</p
Software for Simultaneous orientation and 3D localization microscopy with a Vortex point spread function
No full textThis code is distributed as accompanying software for the article Simultaneous orientation and 3D localization microscopy with a Vortex point spread function by Christiaan N. Hulleman, Rasmus Ø. Thorsen, Eugene Kim, Cees Dekker, Sjoerd Stallinga, and Bernd Rieger.Any reuse of this code should cite the original associated publication.</p
Electrical instabilities in organic semiconductors caused by trapped supercooled water
No full textIt is reported that the electrical instability known as bias stress is caused by the presence of trapped water in the organic layer. Experimental evidence as provided by the observation of an anomaly occurring systematically at around 200 K. This anomaly is observed in a variety of materials, independent of the deposition techniques and remarkably coincides with a known phase transition of supercooled water. Confined water does not crystallize at 273 K but forms a metastable liquid. This metastable water behaves electrically as a charge trap, which causes the instability. Below 200 K the water finally solidifies and the electrical traps disappear. (c) 2006 American Institute of Physics
Going Beyond Counting First Authors in Author Co-citation Analysis
No full textThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Electrical characterization of organic based transistors: stability issues
No full textAn investigation into the stability of metal insulator semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow a stretched-hyperbola type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T approximate to 220 K and the other at T approximate to 300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and alpha-sexithiophene deposition parameters. Copyright (c) 2005 John Wiley A Sons, Ltd
Appropriate Similarity Measures for Author Cocitation Analysis
No full textWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
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