1,721,041 research outputs found
EXPERIMENTAL-STUDY OF VAPOR-DEPOSITION AND DEW POINTS IN COMBUSTION GASES BY INTERFEROMETRIC-TECHNIQUE
No full textKorea Science and Engineering Foundatio
Fabrication of thin film transistors using a Si/Si1-xGex/Si triple layer film on a SiO2 substrate
No full textA novel approach that can reduce the thermal budget in the fabrication of thin film transistors (TFT's) using a Si/Si0.7Ge0.3/Si triple film as an active layer was proposed. The crystallization behavior of the triple film was described and device characteristics of Si/Si0.7Ge0.3/Si TFT's were compared with those of Si TFT's and of SiGe TFT's. The triple film was completely crystallized only after a 25-h anneal at 550 degrees C, N-channel polycrystalline Si/Si0.7Ge0.3/Si TFT's had a field-effect mobility of 57.9 cm(2)/Vs and an I-on/I-off ratio of 5.7 x 10(6). This technique provides not only a shorter time processing capability than Si TFT's technology but also superior device characteristics compared to SiGe TFT's
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Full text linkWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
No full textThe effect of working pressure on the properties of Al2O3 films was investigated in direct-type plasma-enhanced atomic layer deposition. Increasing pressure yielded a denser Al2O3 film and a thinner SiOx interlayer, but only slightly affected the Al2O3 film thickness. The diffusivity of O atoms was evaluated by using time-averaged emission intensities of the He I and O I lines. The consumption rate of O radicals and the production rate of H radicals, as functions of plasma exposure time, were deduced from analyzing temporal evolutions of emission intensities of the O I and H-alpha lines, respectively. The amounts of C and H impurities in the film were confirmed by using an X-ray photoelectron spectroscopy. Finally, the mechanisms by which the working pressure affected the properties of Al2O3 films were discussed based on the experimental results.
Iridium metal thin films and patterned IrO2 nanowires deposited using iridium(I) carbonyl precursors
No full textTHIN-FILM TRANSISTORS WITH POLYCRYSTALLINE SILICON PREPARED BY A NEW ANNEALING METHOD
No full textA new annealing method, nucleation by rapid thermal annealing (RTA) and grain growth in furnace annealing, has been developed to obtain high-quality polycrystalline silicon (poly-Si) and to reduce the long annealing time for solid-phase crystallization (SPC) of amorphorus silicon (a-Si) film without a decrease in grain size. Poly-Si thin-film transistors (TFTs) were fabricated using this method and the electrical properties of poly-Si film were evaluated. We obtained higher field effect mobility (25 cm2/(V.s)) and better uniformity (less-than-or-equal-to 5% in 5-inch wafer) than those obtainable by the conventional furnace annealing
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