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    Optical properties of Si-O-N-F films as a phase shift mask material for 157 nm optical lithography

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    Si-O-N-F has been studied as a new candidate material for a high transmittance attenuated phase shift mask (HT-Att-PSM). The requirements of HT-Att-PSM are 20 +/- 5% transmittance and 180degrees phase shift at the exposure wavelength (157 nm) and less than 40% transmittance at the inspection wavelength (193 nm). Si-O-N-F films were deposited with varying process parameters, such as gas flow rate and deposition time, to find optimum conditions to meet the above requirements. In this study, the effects of process parameters on the optical properties and the degradation of Si-O-N-F films were examined. To satisfy the requirements of HT-Att-PSM, a new mask structure was suggested and analyzed. (C) 2003 Published by Elsevier Science B.V.Samsung Electronics Co., Ltd

    Going Beyond Counting First Authors in Author Co-citation Analysis

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    The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
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