136 research outputs found
ANALISIS DAN PERANCANGAN E-CRM PADA PT. HANDY HARTONO KREASI MANDIRI
No full textANALISIS DAN PERANCANGAN E-CRM PADA PT. HANDY HARTONO KREASI MANDIRI
Analysis the effect of reflector (flat mirror, convex mirror, and concave mirror) on solar panel
No full textAt the time of the sun a straight line with solar cells may not necessarily produce the maximum output. Various ways continue to be done in order to get the maximum output. The maximum utilization of output from solar cells will accelerate the function of the solar cell. The use of reflectors is an excellent way to maximum output with effective time. The author will analyze solar cells with flat mirror, convex mirror, concave mirror, and without reflector. Each reflector is given varying treatment by calibrating the angle of the reflector to the solar cell by 60o, 90o, and 120o. After testing and data retrieval turns reflector very influential on the output of solar cells. The solar cell output power increases with each different reflector. Maximum output is obtained in a concave mirror with an angle is 90o
Indium doped graded channel MOSFET IR medium region (1.5 μm–6.0 μm) detector
No full textAnalisis Unjuk Kerja GCMOS
No full textPaulisan ini adalah suatu analisa terhadap divais Graded-Channel Metal-Oxide- Semiconductor Fietd-Effea-Transistor atau disingkat GCMOSFET- Telanlogi GCMOSFET
ini bertrembang sebagai salah satu usaha untukmenenuhi kebutuhan divais dalam aplikas
SIMULASI GRADED CHANNEL MOSFET DENGAN S-PISCES 2B
No full textGraded Channel MOSFET simulation with S-Pisces 2B. Graded-Channel Metal-Oxide-Semiconductor Field-effect-Transistor or GCMOSFET is being discussed in this paper. GCMOSFET technology has been developed to meet thegrowing demand for low power and high performance application. In this paper, it will be shown that, compared toungraded MOSFET, the GCMOSFET device offers the advantage of significantly higher drive current. The higher drivecurrent is achieved because the effecctive channel length of GCMOSFET is shorter than the ungraded MOSFET's.From the simulation result with S-PISCES 2B and MATLAB, it can been shown that the ID from GCMOSFET ishigher than the ID from ungraded MOSFET. As an example, with VG = 4 V and VD = 4 V, ID from MOSFET is equalwith 9.78 e-06 A and ID from GCMOSFET is equal with 16.56 e-06 A. Beside that, as an example, to get ID = 1.13 e-05A with MOSFET will need VG = 4 V and VD = 4.7 V, and with GCMOSFET VG = 4 V and VD = 1.2 V will be needed.This result has shown that GCMOSFET needs lower supply voltage than the ungraded MOSFET which means thatGCMOSFET needs lower power consumption than ungraded MOSFET. From the simulation results, it can be provedthat GCMOSFETwith shorter LGC (graded channel region length) will give larger ID than ID from GCMOSFET withlonger LGC. As we can see that for VGS = 4 V and VDS = 2 V, GCMOSFET with LGC = 4 μm will give ID = 16,56E-06A, GCMOSFET with LGC = 3,5 μm will give ID = 17,51E-06 A, and GCMOSFET with LGC = 3 μm will give ID =18,49E-06Keywords: S-Pisces 2B, MOSFET, GCMOSFE
Graded Channel MOSFET simulation with S-Pisces 2B
No full textGraded Channel MOSFET simulation with S-Pisces 2B. Graded-Channel Metal-Oxide-Semiconductor Field-effect- Transistor or GCMOSFET is being discussed in this paper. GCMOSFET technology has been developed to meet the growing demand for low power and high performance application. In this paper, it will be shown that, compared to ungraded MOSFET, the GCMOSFET device offers the advantage of significantly higher drive current. The higher drive current is achieved because the effecctive channel length of GCMOSFET is shorter than the ungraded MOSFET’s. From the simulation result with S-PISCES 2B and MATLAB, it can been shown that the ID from GCMOSFET is higher than the ID from ungraded MOSFET. As an example, with VG = 4 V and VD = 4 V, ID from MOSFET is equal with 9.78 e-06 A and ID from GCMOSFET is equal with 16.56 e-06 A. Beside that, as an example, to get ID = 1.13 e-05 A with MOSFET will need VG = 4 V and VD = 4.7 V, and with GCMOSFET VG = 4 V and VD = 1.2 V will be needed. This result has shown that GCMOSFET needs lower supply voltage than the ungraded MOSFET which means that GCMOSFET needs lower power consumption than ungraded MOSFET. From the simulation results, it can be proved that GCMOSFETwith shorter LGC (graded channel region length) will give larger ID than ID from GCMOSFET with longer LGC. As we can see that for VGS = 4 V and VDS = 2 V, GCMOSFET with LGC = 4 μm will give ID = 16,56E-06 A, GCMOSFET with LGC = 3,5 μm will give ID = 17,51E-06 A, and GCMOSFET with LGC = 3 μm will give ID = 18,49E-0
3.5 GHz Rectangular Patch Microstrip Antenna with Defected Ground Structure for 5G
No full textABSTRAKPada penelitian ini telah dilakukan perancangan dan implementasi antena mikrostrip untuk aplikasi generasi kelima (5G) pada frekuensi 3.5 GHz. Parameter yang diinginkan berdasarkan pada posisi kebijakan publik Huawei, posisi kebijakan publik Qualcomm, dan artikel 3rd Generation Partnership Project (3GPP) Rel-15. Antena mikrostrip memiliki bandwidth yang sempit, oleh karena itu beberapa modifikasi digunakan, yaitu teknik proximity coupled dan defected ground structure (DGS). Tahap pertama adalah menghitung dimensi awal antena, kemudian disimulasikan menggunakan HFSS Ansoft. Simulasi dimulai dari simulasi dimensi awal, menambahkan teknik proximity coupled, dan penerapan DGS hingga parameter antena yang diinginkan tercapai. Aktivitas pengukuran dilakukan setelah simulasi dan optimasi telah selesai dikerjakan. Hasil dari pengukuran, gain bertambah menjadi 6.6 dB, bandwidth berkurang sebesar 65.2 MHz, Voltage Standing Wave Ratio (VSWR) dan return loss masing-masing 1.31 dan -17.436 dB. Kata kunci: antena mikrostrip, proximity coupled, DGS, 5G, 3.5 GHzABSTRACT This research has performed the design and implementation of microstrip antenna for fifth generation (5G) application, at frequency 3.5 GHz. The desired parameters are based on Huawei public policy position, Qualcomm public policy position, and Rel-15 3rd Generation Partnership Project (3GPP) article. Since microstrip antenna has narrow bandwidth, some modification are conducted, namely proximity coupled feeding and defected ground structure (DGS). The first stage is calculating the initial dimension of the antenna, finally the antenna is simulated and optimized. The simulation starts from simulating the initial dimension, then applying the proximity coupled feeding, after that employing the DGS until the desired antenna is achieved. The final stage is fabricate the antenna based on simulation then measure it. The measurement results show that the gain is increased to 6.6 dB, the bandwidth is reduced by 65.2 MHz, the Voltage Standing Wave Ratio (VSWR) and return loss are 1.31 and -17.436 dB. Keywords: microstrip antenna, proximity coupled, DGS, 5G, 3.5 GH
Student Attendance Tool with Radio Frequency Identification Integrated Web-Based Images
No full textAttendance is a data collection activity to determine the number of students present. This also applies to the learning process at school. Collecting attendance data manually has several weaknesses, such as inaccurate data when calculating the number of student attendance. This study aimed to create tools to make data collection easier. The tool that made the writer can be explained through the main block diagram which is divided into four parts: input block, process block, output block, and wireless block. In the input block, the RFID module and Esp32cam as student identifiers. In the process block, the Esp8266 microcontroller is the main processing unit to regulate the conditions of the tool being made. The output block includes a TFT LCD screen that displays streaming video during the attendance process. The results showed that the designed device worked well when the image size on the database was the same as the frame size in Base64 format and on a TFT screen measuring 240x320. There was also RFID where a good distance for the tag card to be identified or read on the RFID reader was 0.5 cm to 2.5 cm. This system could improve accuracy and efficiency in student attendance management while providing easy access to information to all interested parties
Classification of nutmeg ripeness using artificial intelligence
No full textNutmeg seeds can produce a lot of oil if they have optimal maturity. In other words, they have little moisture content. Based on observations made at one of the refineries in Sukabumi, farmers do not pay attention to the maturity level of nutmeg seeds after drying which can cause a decrease in the quality of nutmeg seeds and the quality of the oil produced. This study aims to make it easier for nutmeg farmers to classify the maturity of nutmeg seeds. This study used the convolutional neural network (CNN) method to help with classification problems and several image processing methods. This program will be run through an Android application. When the application containing this CNN model is run, the camera system will turn on, and the program will classify in real-time nutmeg objects into 1 of 3 class labels namely LowQuality, MidQuality, or HighQuality class labels classifying. The results will be displayed on the application screen, the results are displayed in the form of class names and scores. The results of CNN model training accuracy are 97.92%
- …
