5,675 research outputs found
Contro la funzionalizzazione della contrattazione collettiva. Riflessioni sul pensiero di Mario Rusciano
No full textL'autore riflette sul pensiero di Mario Rusciano in punto di funzionalizzazione della contrattazione collettiva.The author reflects on the thought of Mario Rusciano in relation to the subject of the functionalisation of collective bargaining
SIMS RSFs in silicon for positive secondary ions with O2+ 1keV at 63° incidence sputtering beam and Zalar rotation.
No full textThe RSFs depend on each SIMS instrument and are affected by the particular analytical conditions used to collect the data. In particular some artifacts occur by sputtering silicon with 1keV O2+ at 63° incidence. The surface topography evolves These artifacts have a big impact on the RFSs for any analyte elements in silicon because of a systematic count rates increase of all reference isotope matrix signals. 25 RSFs are here obtained on ion implanted reference materials following the ISO standard 18114:2003, with and without the Zalar rotation installed on the Cameca SC-ultra. These data are eventually compared with the corresponding RSFs published in the 80-90’s obtained by ims3f and 4f instruments
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage
No full textOptimization of oblique incidence ultra low energy O2+ SIMS analysis of ultra shallow boron distributions has been investigated varying the atmosphere in the analysis chamber (ultra high vacuum or oxygen flooding) and evaluating the effect of a rotating stage allowing a 20 rpm rotation during the analysis. The impact of the different analytical approaches to the ripple formation on the crater bottom has been investigated on a boron delta doped silicon sample by AFM analysis. The combined use of a 0.5 keV O2+ beam at 68° of incidence with oxygen flooding and stage rotation of 20 rpm gave a decay length of 2.0 nm/decade at 60 nm depth without any appreciable detection of variation of sputtering rate
D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides
No full textTo realise gate dielectrics in the present ULSI technology ultra thin oxynitrides are used. Nitrogen quantitative depth profiles are mandatory to characterise this material.
Depth resolution is the key analytical parameter to obtain useful ultra thin oxides characterisation. To improve this resolution very low primary ion impact energy is required. In the present paper, we compare quantitative depth profiles carried out by dynamic-SIMS and ToF-SIMS, respectively.
Dynamic-SIMS analyses have been performed using a Cameca 4-f and the new Cameca Sc-Ultra 300 instrument. Different impact energies and incidence angles were used in combination with MCs+ ion monitoring.
The D-SIMS profiles at keV and sub keV primary beam impact energies, are discussed and compared with ToF-SIMS data obtained using a IONTOF IV instrument
Il diritto penale nel canone di Mario Romano
No full textThis paper deals with the extension and the extraordinary scientific value of the works written by a great Master in Criminal Law, such as Mario Romano. The Author briefly presents some of the most relevant contributions given by Professor Mario Romano to the Criminal Science, first of all his "Commentario sistematico del codice penale" (Systematic Commentary on the penal code), a unique work. Finally, the paper talks about some topics which have been developed inside the work "Studi in onore di Mario Romano" (Studies in Honour of Mario Romano)
ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas
No full textSurface modifications and etching mechanisms of several nanoporous low-k dielectrics (spin-on and PECVD) using fluorocarbon plasmas have been investigated by ToF-SIMS and AFM and compared with those of SiO2. The results show a fluoropolymer film growing on the materials using highly polymerizing discharges (C4F8). The fluoropolymers are converted into fluoroether-like compounds upon etching low-porosity dielectrics in ion-rich C4F8/90% Ar plasmas. These layers mitigate the influx of plasma species and inhibit the etching rate. No surface roughness develops for
these conditions, keeping the plasma/material interaction regime stationary. On the other hand, the surface coverage by fluoroethers is reduced when the porosity exceeds a given threshold. Consequently, direct plasma/dielectric interactions including ion bombardment take place, causing an increase of the etching rate, surface roughening and severe modifications of the pristine dielectric
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