1,720,970 research outputs found
Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability
No full textHigh indium-content group-III nitrides are of interest to further expand upon our ability to produce highly efficient optical emitters at longer visible/IR wavelengths or to broaden bandgap engineering opportunities in the group-III nitride material system. Current synthesis approaches are limited in their capabilities, in part due to the low decomposition temperature of indium nitride. A new high-pressure spatial chemical vapor deposition (HPS-CVD) has been proposed which can operate at pressures up to 100 atmospheres, thereby significantly raising the growth temperature of indium nitride more than 100 kelvins and permitting the investigation of the impact of pressure on precursor stability and reactivity. This study systematically analyzes an HPS-CVD reactor design using computational fluid dynamic modeling in order to understand favorable operating conditions for growth of group III nitrides. Specifically, the relationship between inlet gas type (nitrogen, hydrogen, or ammonia), inlet gas velocity, gas flow rate, and rotational speed of the wafer carrier is evaluated for conditions under which a smooth and dominant vortex-free flow are obtained over the wafer. Heater power was varied to maintain a wafer temperature of 1250–1300 K. Favorable operating conditions were identified that were simultaneously met for all three gas types, providing a stable operating window for a wide range of gas chemistries for growth; at one atmosphere, a disk rotational speed of 50 rpm and a flow rate of 12 slm for all gas types is desired
Numerical Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability at High Pressures
No full textHighly indium-rich group-III nitrides are attracting attention for advancing our capacity to create highly effective optical emitters at extended visible/IR wavelengths or for enhancing bandgap engineering possibilities within the group-III nitride material framework. Current methods of synthesis are constrained in their efficacy, partially owing to the low decomposition temperature of indium nitride. Implementation of a new design of a vertical high-pressure spatial chemical vapor deposition (HPS-CVD) reactor with six separated precursor source zones and a rotating wafer carrier disk carrying four 2-inch wafers is proposed and analyzed using COMSOL Multiphysics as a commercial computational fluid dynamics (CFD) program to study the fluid phenomena inside the numerical domain. This study focuses on understanding the different flow patterns within the chambers at super-atmospheric conditions (5 atm to 30 atm) and identifying suitable operating conditions under which smooth and dominant vortex-free flow is achieved. Four 2-inch wafers are heated to maintain a temperature of 1200–1300 K at each pressure and gas type. Three different gas types (nitrogen, hydrogen, and ammonia) are used, and the impacts of different inlet flow velocities and rotational speeds are investigated and discussed. An operating matrix is presented for each analyzed system pressure providing suitable combinations of these operational variables for smooth flow in the chambers. Each gas type was identified to have a range of suitable rotational and inlet velocity regimes at each operating pressure. Overlap of these three gas-specific operating condition windows resulted in the identification of a generally suitable operating condition for smooth flow patterns in the system regardless of the gas type used, as required for the growth of group-III nitride materials
Decomposition of supercritical ammonia and modeling of supercritical ammonia–nitrogen–hydrogen solutions with applicability toward ammonothermal conditions
No full textProgress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices
No full textGallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derived from metal–organic chemical vapor deposition gallium nitride grown on foreign substrates such as sapphire and silicon carbide, the best performance values consistently come from devices built on bulk-grown gallium nitride from native seeds. The most prominent and promising of the bulk growth methods is the ammonothermal method of high-pressure solution growth. The state-of-the-art from the last five years in ammonothermal gallium nitride technology is herein reviewed within the general categories of growth technology, characterization and defects as well as device performance
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
- …
