341,375 research outputs found
Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks
No full textUsing ensemble Monte Carlo device simulations, this paper studies the impact of interface roughness and soft-optical phonon scattering on the performance of sub-100nm Si and strained Si MOSFETs with different high-k gate stacks. Devices with gate lengths down to 25nm have been investigated
Thermal expansion anomalies of R(Fe, M)(12) (R=Y, Nd; M=Mo and Si)
No full textStructural and thermal-expansion anomaly studies on R(Fe,M)(12) (R=Nd and and Y, M=Mo and Si) compounds were performed by x-ray diffraction. Mo atoms occupy the 8i site. While Si atoms occupy the 8f and 8j sites but not the 8i site. Thermal-expansion anomaly shows only in ab plane in the Mo compounds, while becomes very weak and along with only the c axis in the Si compounds. The anomaly was attributed to the contribution of the interactions of short Fe-Fe distances similar to the previous explanation on other R-Fe intermetallics and that of other strongly positive interactions such as 8j-8j. (c) 2005 American Institute of Physics.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000230168300025&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Physics, AppliedSCI(E)EICPCI-S(ISTP)
Appropriate Similarity Measures for Author Cocitation Analysis
No full textWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
"Closing the R&D Gap, Evaluating the Sources of R&D Spending"
No full textBoth spending and tax policies have been implemented in the United States with the goal of stimulating private sector research and development (R&D). Karier questions whether current R&D policy, especially the research and experimentation tax credit, can contribute to closing the gap between nondefense expenditures on R&D in the United States and such expenditures in other countries, such as Japan and Germany. He also explores possible changes to our current R&D policy to make it more effective.
Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface
No full textElectron paramagnetic resonance (EPR) was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only Pb0 and Pb1 centres, which are well known in Si/SiO2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7±1.0)x1011 cm-2 and (8±3)x1010 cm-2 respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5±0.7)x1011 cm-2. Forming gas annealing at temperatures in the range 400oC to 550oC causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low temperature deposition
Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
No full textThe design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies
Going Beyond Counting First Authors in Author Co-citation Analysis
No full textThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Rolled up si-based three dimensional micro-/nanostructures for MEMS/NEMS
No full textRecently, by combination of the “top down” and “bottom up” approaches, a new strategy to fabricate 3D micro-/nanostructures named self-scrolling technique has been introduced by Prinz et al. in 1999. In this PhD dissertation, the method and principle of how to scale down such kinds of novel structures in a better controllable way are explored. Started from the investigation of scrolling SiGe/Si structures in a micrometer scale, which is fundamental for the further research in this field, we have controllably fabricated two different 3D structures, i.e. tubes and helices, from patterned SiGe/Si bilayers and SiGe/Si/Cr multi-layers. Based on our experimental results, the scrolling principles to form Si based tubes and helices from 2D micrometer scale strained thin films are well developed. Furthermore, special attention is paid to find new phenomena and behaviors of the 3D nanostructures when the designed pattern of the strained thin films is scaled down to nanometer size. An anomalous coiling of the strained thin films has been identified, which could not be interpreted by common principles adopted for rolling-up of the mesa-structures in micrometer scale. The followed intensive investigations have revealed that the anomalous coiling is caused by “edge effects”, i.e. the stress relaxation at the rims of thin films. A comprehensive description of the new effects is given in this thesis. The other important aim of this thesis is to characterize physical properties of Sibased rolled-up micro-/nanostructures for potential applications. Both electrical and mechanical properties of freestanding SiGe/Si microtubes are investigated. The high conductivity of boron doped SiGe/Si microtubes is confirmed by two-probe I-V measurements. The bending stiffness and mechanical instability of individual SiGe/Si mcirotubes are probed by atomic force microscopy (AFM) and nanorobotic manipulation. Eventually, nanorobotic manipulation was successfully applied for the characterization of mechanical properties of other 3D micro-/nanostructures such as helices, spirals and rings. Our experimental results revealed that the as-fabricated micro-/nanostructures are elastic, robust, and stable in mechanics, and that the new approach based on nanorobotic manipulation is a promising technique for mechanical properties characterization of these rolled-up 3-D structures
New approaches to casting hypereutectic Al-Si alloys to achieve simultaneous refinement of primary silicon and modification of eutectic silicon
No full textThis thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel UniversityHypereutectic Al-Si alloys are of increasing interest for applications that require a combination of light weight and high wear resistance, such as pistons, liner-less engine blocks and pumps. The wear resistance of this class of alloys is due to the presence of hard primary Si particles formed during casting. The objective of this work was to develop one or more methods of refining primary silicon in cast hypereutectic Al-Si alloys to compete with the conventional process of adding phosphorous and to achieve the simultaneous modification of silicon in the Al-Si eutectic. A robust sampling/casting technique was developed to minimise macro-segregation of primary silicon during solidification of hypereutectic Al-Si alloys by using water cooled steel mould with cooling rate in excess of 15 K/s. The morphology of silicon phases was found to change with increasing melt temperature and cooling rate. The high cooling rate and superheat temperature produces a good distribution of polyhedral primary silicon particles in a refined lamellar eutectic matrix in solidification of commercial purity Al-Si alloys. Removing Ca by fluxing with K2SiF6 prior to casting can improve the refinement and modification effect of Mg and Sb respectively. Effects of various inoculants were studied. Microstructural analysis showed that Mg and ZnS refined primary Si whereas MgO, CaO and Na2S coarsened the primary Si together with a modification effect on the eutectic Si. Adding Zn had no effect on morphology of Si phases. Refinement of both primary and eutectic silicon phases was observed for the Al-15Si alloy with Mg content ≤ 0.3 wt%.
P-doped γ-Al2O3 was found to be a potent substrate to nucleate primary silicon whilst good modification of the eutectic matrix is retained during solidification of hypereutectic Al-Si alloys. On using P-doped γ-Al2O3 could be a perfect and clean source of P without additional impurities.
A new solid-liquid duplex casting process was devised to achieve simultaneous refinement and modification of Si phases in hypereutectic Al-Si alloys with improvement in mechanical properties. The static mechanical properties of Al-Si produced by the solid-liquid duplex casting process are significantly better than conventionally cast untreated Al-Si and slightly better than conventionally cast Al-Si treated with P and/or Sr. A novel Al-ZnS master alloy was developed by in situ reaction of Zn and Na2S in the Al melt. The results from this study leave little doubt that this novel Al-ZnS master alloy is a promising refiner in solidification of hypereutectic Al-Si alloys. It refines primary silicon to the same extent as that achieved by adding P via Cu-P following the same refinement mechanism.EPSRC,U
Letter from R. R. Zellick, Assistant Trust Officer, Anglo California National Bank of San Francisco, to Joseph R. Goodman, October 2, 1942
No full textLetter from R. R. Zellick, Assistant Trust Officer at The Anglo California National Bank of San Francisco, to Joseph R. Goodman, regarding property owned by Dave Tatsuno. Zellick mentions a dispute between current tenants and Tatsuno, and that Tatsuno has asked Goodman to help locate trustworthy tenants.Personal correspondence, organizational records, government documents, publications, and other papers created or collected by Joseph R. Goodman documenting the forced removal and incarceration of Japanese Americans during World War II, as well as organized resistance to incarceration. Included in the collection are records of the Japanese Young Men's Christian Association and the Japanese American Citizens' League in San Francisco, including papers of the Japanese YMCA's executive secretary Lincoln Kanai; Sakai family papers; Goodman's correspondence to and from Japanese American incarcerees, organizations opposing forced removal and incarceration of Japanese Americans, the War Relocation Authority, and others; publications, photographs, and ephemera from the Topaz Relocation Center, where Goodman taught high school; War Relocation Authority records and publications; and newspaper clippings, pamphlets, and reports about forced removal and incarceration created by various government, religious, and civic organizations, in California and nationwide
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