196,632 research outputs found
Long-range order on the atomic scale induced at CoFeB/MgO interfaces
No full textEilers G, Ulrichs H, Muenzenberg M, Thomas A, Thiel K, Seibt M. Long-range order on the atomic scale induced at CoFeB/MgO interfaces. JOURNAL OF APPLIED PHYSICS. 2009;105(7):073701.The amorphous (a-) CoFeB/crystalline (c-) MgO based tunneling system interface has been studied by means of quantitative high resolution transmission electron microscopy from atomic to micrometer length scales with increasing annealing temperatures. On the micron scale an irregular nucleation is found. On the atomic scale a long-range order is induced by the MgO interface, explaining the high tunnel magnetoresistance values > 100% even for not fully crystallized CoFeB/MgO/CoFeB tunnel junctions. (C) 2009 American Institute of Physics. [DOI:10.1063/1.3100044
Microstructural and electrical properties of NiSi2 precipitates at dislocations in silicon
No full textTransmission electron microscopy (TEM) and deep level transient spectroscopy (DLTS) have been used to investigate the interaction of nickel impurities with glide dislocations in plastically deformed silicon. A strong interaction between silicide precipitates and glide dislocations has been observed showing that the latter not only serve as nucleation sites but are an integral part of precipitate growth. Deep localized states obtained by DLTS are most probably related to nickel atoms close to or in the dislocation core. It is speculated that the strong silicide-dislocation interaction may account for nickel incorporation into the dislocation core
Microstructural and electrical properties of NiSi2 precipitates at dislocations in silicon
No full textTransmission electron microscopy (TEM) and deep level transient spectroscopy (DLTS) have been used to investigate the interaction of nickel impurities with glide dislocations in plastically deformed silicon. A strong interaction between silicide precipitates and glide dislocations has been observed showing that the latter not only serve as nucleation sites but are an integral part of precipitate growth. Deep localized states obtained by DLTS are most probably related to nickel atoms close to or in the dislocation core. It is speculated that the strong silicide-dislocation interaction may account for nickel incorporation into the dislocation core
Japonisme 1 2.0 German Visual-kei Fans, Tokio Hotel, and the Popular Music Genre That Must Not Exist
No full textIn the first half of the year 2006, almost every relevant German TV station reported on what Jens Balzer in the Berliner Zeitung on December 23, 2005 had already predicted to become “the next big thing in 2006” (2005b): a Germany-wide scene composed of teens and tweens who, referring to the Japanese rock music genre visual-kei that stands at the center of all their activities, call themselves Visuals or Visus. The concert might well be the reason why almost all German TV stations reported about the Visu scene in early 2006. The visual-kei is not a Japanese subculture that was globally spread through the internet and adopted by German fans, becomes most obvious when one compares the dynamics of the concerts visual-kei bands give in Japan with those they give in Germany
On the nature of defects produced by motion of dislocations in silicon
No full textPoint defects generated during motion of dislocations in silicon have been investigated using their reaction with gold atoms during gold in-diffusion. Deep Level Transient Spectroscopy (DLTS) measurements in n- and p-type samples have revealed that in regions with dislocation densities of 10(4)-10(6)cm(-2), the concentration of gold atoms is by 1.5-2 orders of magnitude higher than in the dislocation-free regions of the same samples. The increase in the gold atom concentration in the regions containing dislocations is explained by the presence of some vacancy complexes generated by dislocations moving in their slip planes. Just after dislocation motion, most of these complexes are not detectable by DLTS. They become observable in DLTS due to their reaction with gold atoms.Russian Academy of Sciences; President grant [NSh-884.2014.2
Werner Seibt, Alexandra-Kyriaki Wassiliou, Die byzantinischen Bleisiegel in Österreich, t. II/2, Zentral- und Provinzialverwaltung.
No full textNichanian M. Werner Seibt, Alexandra-Kyriaki Wassiliou, Die byzantinischen Bleisiegel in Österreich, t. II/2, Zentral- und Provinzialverwaltung.. In: Revue numismatique, 6e série - Tome 161, année 2005 pp. 245-247
Papers dedicated to Professor Dr. Wolfgang Schroter on the occasion of his 65th anniversary - Preface
No full textMicrostructure and twinning in epitaxial NiMnGa films
No full textAlthough magnetic shape memory alloys have attracted large scientific interest, miniaturization as single-crystalline thin films is still a greatly unresolved issue. In the present work we investigate the microstructure of epitaxial NiMnGa thin films which are fabricated by sputter deposition on magnesium oxide substrates at elevated temperatures. Transmission and scanning electron microscopy as well as atomic force microscopy studies are employed to relate surface topography to twin formation in 7 M martensitic NiMnGa films. Additional findings include pore formation in substrate proximity as well as minor precipitation with reduced nickel and gallium contents
High-resolution electron microscopy of interfaces between solids with varying degree of atomic ordering
No full textHigh-resolution electron microscopy is used to study interfaces between solids with varying degree of atomic ordering. Applying a recently developed technique the structure of amorphous germanium near (111) oriented crystalline silicon is described by its two-dimensional distribution function rho(x, y) of atoms, and properties of rho(x, y) are extracted from experimental images. Using extensive image simulations it is further shown that the technique is suitable to measure composition profiles at coherent heterointerfaces
Epitaxial growth due to phase separation of disordered eutectic Au : Si alloys on silicon
No full textEpitaxial growth of gold on Si(100) from disordered Au:Si alloys has been studied by in situ reflection high energy electron diffraction and ex situ transmission electron microcopy. It is shown that different orientation relationships are formed depending on whether the disordered alloy is the eutectic melt or a disordered phase resulting from the reaction of silicon and deposited Au:Si thin films at temperatures far below the eutectic temperature. This observation is taken as evidence that the latter phase is a solid amorphous phase with near-eutectic composition
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