196,133 research outputs found

    Admittance measurements on a-Si/c-Si heterojunction solar cells

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    Hydrogenated amorphous silicon/ crystalline silicon (a- Si: H/ c- Si) solar cells with areas of 1 x 1 cm are produced by deposition of a- Si: H and indium- tin- oxide (ITO) on 3- in. wafers. Three types of samples have been prepared for admittance measurements, differing in the way how the effective area is defined. The measurement geometry is either defined by cutting, by etching the ITO layer outside the 1 cm(2) active area, or by etching the ITO and the a- Si: H outside the active area. Admittance measurements reveal that the lateral conductivity of the ITO is high enough up to a frequency of 1 MHz to ensure a lateral equipotential surface. A simple equivalent network consisting of a parallel resistor- capacitor branch in series to a second resistor controls the cut sample. For the sample with just ITO layer etching, the effects of a lateral channel due to the a- Si: H layer have to be included. The finite dimensions of the sample modify the low- pass character of the channel. The sample with ITO and a- Si: H layer etching delivers the best measurement conditions. In all three cases the dispersion allows the surface doping level of the substrate to be extracted from the CV characteristics measured at 1 MH

    Interplay of cross-plane polaronic transport and resistive switching in Pt-Pr0.67Ca0.33MnO3-Pt heterostructures

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    The identification of the cross-plane electric transport mechanisms in different resistance states of metal-oxide sandwich structures is essential for gaining insights into the mechanisms of resistive switching (RS). Here, we present a systematic study of cross-plane electric transport properties of Pr0.67Ca0.33MnO3 (PCMO) thin films sandwiched by precious Pt metal electrodes. We observe three different transport regimes: ohmic, nonlinear and RS. The nonlinear regime is associated with colossal magneto-resistance (CMR) and colossal electro-resistance (CER) effects. In contrast to RS, the CMR and CER are volatile resistance effects which persist only during application of strong magnetic or electric fields and they are restricted to low temperatures. At low current densities, the device resistance is dominated by small polaron hopping transport of the PCMO film. At higher electric current densities near the switching threshold, the interface resistance starts to dominate and remarkably also exhibits thermally activated transport properties. Our studies also shed light onto the interplay of colossal resistance effects and RS: at low temperatures, RS can be only induced by reduction of the PCMO resistivity through CMR and CER. This clearly demonstrates the key role of the current density for controlling the amplitude of non-volatile resistive changes. Conversely, the CMR can be used as a probe for the switching induced changes in disorder and correlations. At small switching amplitudes, we observe slight changes in polaron activation energy which can be attributed to changes at the interface. If the switching amplitude exceeds 1000% and more, the CMR effect in the device can be reversibly changed. This indicates persistent changes in electronic or lattice structure of large regions within the PCMO film.DFG [JO 348/10-1]Open-Access-Publikationsfonds 201

    Polarity reversal in bipolar resistive switching in Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> noble metal sandwich structures

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    The electrically induced persistent resistance change in perovskite Pr0.7Ca0.3MnO3 films sandwiched by metallic electrodes is analyzed with respect to noble electrode materials (Pt, Au, and Ag) and geometric arrangement by electrical transport measurements. Comparing switching behavior in symmetric and asymmetric electrode interfaces gives evidence for identifying the active, single interface in the switching process. The interaction of two opposing interfaces can lead to an observed switching polarity inversion in different current density regimes in the otherwise well defined bipolar behavior. The different noble metals exhibit a quite similar switching behavior, but a lower interfacial resistance seems to favor switching. (C) 2011 American Institute of Physics. [doi:10.1063/1.3610429

    Dr. Duane M. Jackson, Morehouse College, July 2011

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    This video is a conversation with Dr. Duane M. Jackson. Dr. Jackson talks about his paper, "Recall and the Serial Position Effect: The Role of Primacy and Recency on Accounting Students' Performance." Jackie Daniel, AUC Woodruff Library, is the interviewer

    Lead-free electrical conductive adhesives for solar cell interconnectors

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    The electrical properties of various lead-free electrically conductive adhesives are investigated. They are intended to replace the solder, which is normally used to connect the interconnector tapes to the busbar. Compared to solder joints conductive adhesives offer the advantage of lower contact formation temperature with reasonable low contact resistances

    "Reflections on the subject of Emigration from Europe with a view to Settlement in the United States" By M. Carey.

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    "Reflections on the subject of Emigration from Europe with a view to Settlement in the United States: containing bried sketches of the moral and political character of those states. By M. Carey, member of the American philosophical, and of the American Antiquarian Society, and author of The Olive Branch, Cindiciae Hibernicae, essays on banking, on political economy, and on internal improvement. To which are now added the English editor's comments on the subject; together with Important Advice to Emigrants, and Cautions Against Impositions Practiced in the Outports
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