1,720,980 research outputs found
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Dispelling the Myths Behind First-author Citation Counts
Get PDFWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
Ab initio studie van III-V halfgeleider-oxidegrensvlakken.
No full textThis work addresses the key issues of the passivation of the III-V compound semiconductors surfaces and the quality of the III-V/oxide interfaces, constituting crucial aspects in the development and the implementation of next generation MOSFETs, based on the use of innovative and alternative materials other than the traditional silicon, such as III-V compounds.We have carried out a theoretical investigation on physical systems of relevance to this purpose, such as the oxidation of GaAs and the properties of the resulting GaAs/oxide interface. The methodology used is based on the state-of-the-art first principles modeling techniques.We first investigated the adsorption of molecular oxygen on the GaAs(001)-ß2(2×4) surface and provided both the dynamical picture of the reaction on the surface and the analysis of the energetics and the electronic properties of the adorbates. The results clearly indicated that the most stable type of O bonding, the bridging Ga-O-As bonds, do not show any signature of correlated electronic states in the forbidden gap. The importance of this study lies with the finding that it rules out the scenario of a Fermi level pinning of extrinsic nature, that is, a mechanism in which the onset of electronic defects in the gap could be directly associated to the incorporation on the surface of the adsorbing foreign chemical species. The conclusions rather suggest that defect states in the band gap are generated by the process of adsorption itself, disrupting the morphology of the reconstructed GaAs(001) surface, with attendant generation of structural defects on the surface.We next provided a detailed description at atomic scale of the oxidation of the GaAs(001) surface, through the modeling of the direct oxidation, based on ab initio molecular dynamics simulations. As a result of this study, we could depict an atomistic model of the surface oxidation in its early stages. Specifically, it allowed us to realize the important role played by the stress accumulating at the interface during the oxidation and, more importantly, to identify a key mechanism of stress release, namely, Ga atom ejection into the amorphous oxide atop. As a matter of fact, this latter results naturally in the generation and accumulation of native defects at the interface between the crystalline substrate and the amorphous oxide layer.We then provided a thorough description of the structural and electronic properties of the atomistic models describing the GaAs/oxide interface with a thin oxide film. We found a peaked feature of defect states in the gap for the GaAs/oxide interface models, in agreement with the results reported in the literature of electrical characterizations of this interface. Specifically, the interface models showed: a) an isolated As defect - an As dangling bond - that gives electronic states close to the valence band; b) a sharp feature of midgap states, which can be attributed to a cluster of interacting As dangling bonds; c) and a wider distribution of defect states was also found, located close to the conduction band and correlated with defective (undercoordinated) Ga atoms.We next extended the study to two other III-V semiconductors, InAs and In0.5Ga0.5As, and investigated the properties of the interfaces formed with their native oxides. We generated a set of InAs/oxide and In0.5Ga0.5As/oxide interfaces models by using the GaAs ones as template structures.The analysis of the structural properties highlighted two main differences among the III-V/oxide models investigated: a) an increase of the coordination number of the cation atoms in the amorphous oxide with growing In content; and b) a considerable elongation of the length of the In-O bond compared to the Ga-O one. Another interesting finding is the observation of a clear trend in the structural changes occurring upon the introduction of indium, comprising a densification of the amorphous oxide film. These results suggest that the incorporation of indium, with a higher atomic radius than gallium, promotes the formation of chemical bonds in the amorphous oxide and at the interface that result locally into an increase of the atomic coordination number, and overall, in a densification of the amorphous film.We finally reviewed the electronic properties of the generated III-V/oxide interfaces models. We observed two main differences for the InAs case as compared to GaAs: a) a shift of the defect states distribution towards the edges of the band gap, due to the band gap shrinking associated with the presence of In in the semiconductor, and b) a reduction in the density of the interface states distribution with increasing In content.As to the origin of these improved electronic properties of the III-V/oxide interfaces with In content, a major role is played by the structural properties of indium in the oxide. The latter favors a structural local rearrangement in both the amorphous layer and at the interface, leading to a partial saturation of the dangling bonds.status: Publishe
koamabayili/VECTRON-author-checklist: VECTRON author checklist
No full textWe have done our best to complete the author checklist relating to the use of animals in the hut study. Note that the objective for the hut study was to evaluate the IRS treatment applications for residual efficacy against Anopheles mosquitoes, including the local An. coluzzii mosquito population. Cows were only used to attract mosquitoes into the huts and no tests were carried out directly on the cows. The author checklist is intended for use with studies where experiments are carried out on animals, which is why we have had such difficulty in completing this for the hut study, as many of the questions do not relate to how the cows were used
Author-wise bibliometric analysis based on entropy.
No full textAuthor-wise bibliometric analysis based on entropy.</p
Author Under Sail The Imagination of Jack London, 1893-1902
No full textIn Author Under Sail, Jay Williams offers the first complete literary biography of Jack London as a professional writer engaged in the labor of writing. It examines the authorial imagination in London's work, the use of imagination in both his fiction and nonfiction, and the ways he defined imagination in the creative process in his business dealings with his publishers, editors, and agents. In this first volume of a two-volume biography, Williams traverses the years 1893 to 1902, from London's "Story of a Typhoon" to The People of the Abyss. The Jack London who emerges in the pages of Author Under Sail is a writer whose partnership with publishers, most notably his productive alliance with George Brett of Macmillan, was one of the most formative in American literary history. London pioneered many author models during the heyday of realism and naturalism, blurring the boundaries of these popular genres by focusing on absorption and theatricality and the representation of the seen and unseen. London created an impassioned, sincere, and extremely personal realism unlike that of other American writers of the time. Author Under Sail is a literary tour de force that reveals the full range of London as writer, creative citizen, and entrepreneur at the same time it sheds light on the maverick side of machine-age literature.Intro -- Title Page -- Copyright Page -- Dedication -- Contents -- Acknowledgments -- Introduction -- 1. Spirit Truth -- 2. From Absorption to Theatricality and Back Again -- 3. "I Will Build a New Present" -- 4. Sons as Authors -- 5. Fathers as Publishers -- 6. The Daughter as Author -- 7. Lovers as Authors -- 8. At Sea with the Family -- 9. Yellow News, Yellow Stories -- 10. The Return Home -- Notes -- Bibliography -- Index -- About Jay WilliamsIn Author Under Sail, Jay Williams offers the first complete literary biography of Jack London as a professional writer engaged in the labor of writing. It examines the authorial imagination in London's work, the use of imagination in both his fiction and nonfiction, and the ways he defined imagination in the creative process in his business dealings with his publishers, editors, and agents. In this first volume of a two-volume biography, Williams traverses the years 1893 to 1902, from London's "Story of a Typhoon" to The People of the Abyss. The Jack London who emerges in the pages of Author Under Sail is a writer whose partnership with publishers, most notably his productive alliance with George Brett of Macmillan, was one of the most formative in American literary history. London pioneered many author models during the heyday of realism and naturalism, blurring the boundaries of these popular genres by focusing on absorption and theatricality and the representation of the seen and unseen. London created an impassioned, sincere, and extremely personal realism unlike that of other American writers of the time. Author Under Sail is a literary tour de force that reveals the full range of London as writer, creative citizen, and entrepreneur at the same time it sheds light on the maverick side of machine-age literature.Description based on publisher supplied metadata and other sources.Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, YYYY. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries
- …
