1,721,037 research outputs found
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Ordering self-assembled islands without substrate patterning
No full textThe self-patterning of the strain field that arises in the growth of stacked multilayers of heteroepitaxial islands, together with the capability of tuning the island size by acting on the deposition temperature, are here exploited to obtain self-organization, resulting in well-ordered clusters composed of regularly disposed, nanosized islands. Our results show that the island spatial distribution can be tuned from a random one to a well-ordered square lattice of island clusters, and that the number of islands inside each cluster can be selected. Moreover, due to the dipole repulsive interaction between adjacent islands, the islands themselves arrange in an ordered fashion inside a single cluster along the same [010]-[100] crystalline directions of the long-range cluster ordering. (C) 2003 American Institute of Physics
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors
No full textAppropriate Similarity Measures for Author Cocitation Analysis
Full text linkWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Intermixing-promoted scaling of Ge/Si(100) island sizes
No full textThe shape evolution and the effect of deposition temperature on size and composition of chemical vapor deposition grown Ge/Si(100) islands have been investigated in the deposition temperature range 450-850 degreesC. It is found that the increase of the growth temperature above 600 degreesC entails a strong island enlargement due to an increased Si/Ge intermixing. The crystallographic structure of the islands was investigated by transmission electron microscopy. The analysis of the resulting Moire pattern reveals that the island lattice deformation decreases with increasing island size and that the effective mismatch epsilon between the silicon substrate and the epilayer decreases with increasing deposition temperature. The island nucleation size, the mean size of coherent islands and the critical size for the insertion of misfit dislocations have been found to scale as epsilon(-2), epsilon(-2), and epsilon(-1), respectively. The agreement of our experimental scaling results with the predictions of theoretical calculation performed for homogeneous heterostructures suggests that, although the Si distribution inside the islands is not homogeneous, the island growth is driven by the mean effective strain
Intermixing-promoted scaling of Ge/Si(100) island sizes
No full textThe shape evolution and the effect of deposition temperature on size and composition of chemical vapor deposition grown Ge/Si(100) islands have been investigated in the deposition temperature range 450-850 degreesC. It is found that the increase of the growth temperature above 600 degreesC entails a strong island enlargement due to an increased Si/Ge intermixing. The crystallographic structure of the islands was investigated by transmission electron microscopy. The analysis of the resulting Moire pattern reveals that the island lattice deformation decreases with increasing island size and that the effective mismatch epsilon between the silicon substrate and the epilayer decreases with increasing deposition temperature. The island nucleation size, the mean size of coherent islands and the critical size for the insertion of misfit dislocations have been found to scale as epsilon(-2), epsilon(-2), and epsilon(-1), respectively. The agreement of our experimental scaling results with the predictions of theoretical calculation performed for homogeneous heterostructures suggests that, although the Si distribution inside the islands is not homogeneous, the island growth is driven by the mean effective strain. (C) 2002 American Institute of Physics
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