112,397 research outputs found
On exploiting the weak invariance of multiplicative elasto-plasticity for efficient numerical integration
No full textThe paper is devoted to the efficient and robust implementation of a certain finite-strain plasticity model, formulated with in the popular multiplicative framework. The model was proposed by Shutov and Kreißig (2008), and it captures the nonlinear behavior of metallic materials, including the combine disotropic/kinematic hardening and viscosity. A new implicit time stepping procedure is suggested here, which can be used for the stress computation at each Gauß point of the finite element discretization. The model of Shutov and Kreißig exhibits the so-called weak invariance of the solution under arbitrary isochoric change of the reference configuration. The presented algorithm benefits from this special structure of the constitutive equations: The weak invariance property is exploited for construction of the numerical integration procedure; the resulting procedure preserves the weak invariance. The inelastic incompressibility is exactly preserved as well to suppress the error accumulation; the algorithm is unconditionally stable and first-orderaccurate. In terms of accuracy, the proposed algorithm is comparable with the Euler Backward Method (EBM), but it is superior to EMB with respect to efficiency and robustness
On exploiting the weak invariance of multiplicative elasto-plasticity for efficient numerical integration
No full textThe paper is devoted to the efficient and robust implementation of a certain finite-strain plasticity model, formulated with in the popular multiplicative framework. The model was proposed by Shutov and Kreißig (2008), and it captures the nonlinear behavior of metallic materials, including the combine disotropic/kinematic hardening and viscosity. A new implicit time stepping procedure is suggested here, which can be used for the stress computation at each Gauß point of the finite element discretization. The model of Shutov and Kreißig exhibits the so-called weak invariance of the solution under arbitrary isochoric change of the reference configuration. The presented algorithm benefits from this special structure of the constitutive equations: The weak invariance property is exploited for construction of the numerical integration procedure; the resulting procedure preserves the weak invariance. The inelastic incompressibility is exactly preserved as well to suppress the error accumulation; the algorithm is unconditionally stable and first-orderaccurate. In terms of accuracy, the proposed algorithm is comparable with the Euler Backward Method (EBM), but it is superior to EMB with respect to efficiency and robustness
author-bios-SRD-19-0063.R1 – Supplemental material for The Network Structure of Police Misconduct
No full textSupplemental material, author-bios-SRD-19-0063.R1 for The Network Structure of Police Misconduct by George Wood, Daria Roithmayr and Andrew V. Papachristos in Socius</p
The families of papain- and legumain-like cysteine proteinases from embryonic axes and cotyledons of Vicia seeds: developmental patterns, intracellular localization and functions in globulin proteolysis
No full textFamilies of papain- and legumain-like cysteine proteinases (CPR) were found in Vicia seeds. cDNAs and antibodies were used to follow organ specificity and the developmental course of CPR-specific mRNAs and polypeptides. Four papain-like cysteine proteinases (CPR1, CPR2, proteinase A and CPR4) from vetch seeds (Vicia sativa L.) were analysed. CPR2 and its mRNA were already found in dry embryonic axes. CPR1 was only detected there during early germination. Both CPR1 and CPR2 strongly increased later during germination. In cotyledons, both CPR1 and CPR2 were only observed one to two days later than in the axis. Proteinase A was not found in axes. In cotyledons it could only be detected several days after seeds had germinated. CPR4 mRNA and polypeptide were already present in embryonic axes and cotyledons during seed maturation and decreased in both organs during germination. Purified CPR1, CPR2 and proteinase A exhibited partially different patterns of globulin degradation products in vitro. Although the cDNA-deduced amino acid sequence of the precursor of proteinase A has an N-terminal signal peptide, the enzyme was not found in vacuoles whereas the other papain-like CPRs showed vacuolar localization. Four different legumain-like cysteine proteinases (VsPB2, proteinase B, VnPB1 and VnPB2) of Vicia species were analysed. Proteinase B and VnPB1 mRNAs were detected in cotyledons and seedling organs after seeds had germinated. Proteinase B degraded globulins isolated from mature vetch seeds in vitro. VsPB2 and proteinase B are localized to protein bodies of maturing seeds and seedlings, respectively, of V. sativa. Like VsPB2 from V. sativa, also VnPB2 of V. narbonensis corresponds to vacuolar processing enzymes (beta VPE). Based on these results different functions in molecular maturation and mobilization of storage proteins could be attributed to the various members of the CPR families
Going Beyond Counting First Authors in Author Co-citation Analysis
No full textThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
No full text“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Semiconductors V. 36, I. 02
No full textleave(s) : ill; 28 cm.Semiconductors -- February 2002
Volume 36, Issue 2, pp. 121-238
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors
B. V. Petukhov
pp. 121-125 Full Text: PDF (64 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical Properties of Silicon Layers Implanted with Ytterbium Ions
O. V. Aleksandrov, A. O. Zakhar'in, and N. A. Sobolev
pp. 126-129 Full Text: PDF (57 kB)
Effect of Optical Radiation on Internal Friction in Piezoelectric Semiconductors with Deep-Level Centers
V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, and N. P. Yaroslavtsev
pp. 130-135 Full Text: PDF (87 kB)
"LO-Phonon" Correlation between Picosecond Superluminescence Spectrum and Special Features of Absorption Spectrum in GaAs for Non-Fermi Distribution of Carriers Induced by Picosecond Light Pulse
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, and S. V. Stegantsov
pp. 136-140 Full Text: PDF (71 kB)
Linear Photovoltaic Effect in Gyrotropic Crystals
R. Ya. Rasulov, Yu. E. Salenko, and D. Kambarov
pp. 141-147 Full Text: PDF (97 kB)
Optical Properties of Fluorite in a Wide Energy Range
V. V. Sobolev and A. I. Kalugin
pp. 148-152 Full Text: PDF (76 kB)
Influence of Laser Pump Density on the Characteristic Time Constant and the Intermediate-Field Electromodulation E0 Component of the Photoreflectance Signal
R. V. Kuz'menko, A. V. Ganzha, �. P. Domashevskaya, S. Hildenbrandt, and J. Schreiber
pp. 153-156 Full Text: PDF (52 kB)
Effect of Ionization on the Behavior of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing
M. V. Ardyshev and V. M. Ardyshev
pp. 157-159 Full Text: PDF (48 kB)
Annealing of Deep Boron Centers in Silicon Carbide
V. S. Ballandovich and E. N. Mokhov
pp. 160-166 Full Text: PDF (86 kB)
Edge-Photoluminescence Concentration Dependence in Semi-Insulating Undoped GaAs
V. F. Kovalenko, M. B. Litvinova, and S. V. Shutov
pp. 167-170 Full Text: PDF (66 kB)
Electrically Active Centers in Si:Er Light-Emitting Layers Grown by Sublimation Molecular-Beam Epitaxy
V. B. Shmagin, B. A. Andreev, A. V. Antonov, Z. F. Krasil'nik, V. P. Kuznetsov, O. A. Kuznetsov, E. A. Uskova, C. A. J. Ammerlaan, and G. Pensl
pp. 171-175 Full Text: PDF (70 kB)
Optical Absorption in (Pb0.78Sn0.22)1 ��� XInXTe (X = 0.001 ��� 0.005)
A. N. Veis
pp. 176-179 Full Text: PDF (65 kB)
Distribution of Charge Carriers in Dissipative Semiconductor Structures
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
pp. 180-184 Full Text: PDF (83 kB)
The Effect of Charge-Carrier Drift in the Built-in Quasi-Electric Field on the Emission Spectrum for Graded-Gap Semiconductors
V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov
pp. 185-188 Full Text: PDF (66 kB)
SEMICONDUCTOR STRUCTURE, INTERFACES, AND SURFACES
Silicon Surface Treatment by Pulsed Nitrogen Plasma
F. B. Baimbetov, B. M. Ibraev, and A. M. Zhukeshov
pp. 189-190 Full Text: PDF (36 kB)
Role of Surface Segregation in Formation of Abrupt Interfaces in Si/Si1 ��� xGex Heterocompositions Grown by Molecular-Beam Epitaxy with Combined Sources
L. K. Orlov and N. L. Ivina
pp. 191-196 Full Text: PDF (78 kB)
Segregation of Mobile Ions on Insulator���Semiconductor Interfaces in Metal���Insulator���Semiconductor Structures
S. G. Dmitriev and Yu. V. Markin
pp. 197-202 Full Text: PDF (85 kB)
LOW-DIMENSIONAL SYSTEMS
Photoluminescence of Anti-Modulation-Doped GaAs/AlGaAs Single Quantum Well Structures Exposed to Hydrogen Plasma
Yu. A. Bumai, G. Gobsch, R. Goldhahn, N. Stein, A. Golombek, V. Nakov, and T. S. Cheng
pp. 203-207 Full Text: PDF (67 kB)
Energy Spectrum and Optical Properties of the Quantum Dot���Impurity Center Complex
V. D. Krevchik and A. V. Levashov
pp. 208-212 Full Text: PDF (72 kB)
Injection Excitation of Luminescence in Multilayer nc-Si/Insulator Structures
Yu. A. Berashevich, B. V. Kamenev, and V. E. Borisenko
pp. 213-218 Full Text: PDF (68 kB)
Temperature Dependence of the Optical Energy Gap for the CdSxSe1 ��� x Quantum Dots
V. P. Kunets, N. R. Kulish, Vas. P. Kunets, M. P. Lisitsa, and N. I. Malysh
pp. 219-223 Full Text: PDF (62 kB)
The Dicke Superradiation in Quantum Heterostructures under Optical Pumping
A. I. Klimovskaya, E. G. Gule, and Yu. A. Driga
pp. 224-225 Full Text: PDF (35 kB)
Electroluminescence from AlGaAs/GaAs Quantum-Cascade Structures in the Terahertz Range
N. N. Zinov'ev, A.V. Andrianov, V. Yu. Nekrasov, L. V. Belyakov, O. M. Sreseli, G. Hill, and J. M. Chamberlain
pp. 226-229 Full Text: PDF (55 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained by Cyclic Deposition
V. P. Afanas'ev, A. S. Gudovskikh, V. N. Nevedomskii, A. P. Sazanov, A. A. Sitnikova, I. N. Trapeznikova, and E. I. Terukov
pp. 230-234 Full Text: PDF (155 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Optimal Doping of the Drift Region in Unipolar Diodes and Transistors
A. S. Kyuregyan
pp. 235-238 Full Text: PDF (54 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Semiconductors V. 36, I. 02
No full textSemiconductors -- February 2002
Volume 36, Issue 2, pp. 121-238
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors
B. V. Petukhov
pp. 121-125 Full Text: PDF (64 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical Properties of Silicon Layers Implanted with Ytterbium Ions
O. V. Aleksandrov, A. O. Zakhar'in, and N. A. Sobolev
pp. 126-129 Full Text: PDF (57 kB)
Effect of Optical Radiation on Internal Friction in Piezoelectric Semiconductors with Deep-Level Centers
V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, and N. P. Yaroslavtsev
pp. 130-135 Full Text: PDF (87 kB)
"LO-Phonon" Correlation between Picosecond Superluminescence Spectrum and Special Features of Absorption Spectrum in GaAs for Non-Fermi Distribution of Carriers Induced by Picosecond Light Pulse
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, and S. V. Stegantsov
pp. 136-140 Full Text: PDF (71 kB)
Linear Photovoltaic Effect in Gyrotropic Crystals
R. Ya. Rasulov, Yu. E. Salenko, and D. Kambarov
pp. 141-147 Full Text: PDF (97 kB)
Optical Properties of Fluorite in a Wide Energy Range
V. V. Sobolev and A. I. Kalugin
pp. 148-152 Full Text: PDF (76 kB)
Influence of Laser Pump Density on the Characteristic Time Constant and the Intermediate-Field Electromodulation E0 Component of the Photoreflectance Signal
R. V. Kuz'menko, A. V. Ganzha, É. P. Domashevskaya, S. Hildenbrandt, and J. Schreiber
pp. 153-156 Full Text: PDF (52 kB)
Effect of Ionization on the Behavior of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing
M. V. Ardyshev and V. M. Ardyshev
pp. 157-159 Full Text: PDF (48 kB)
Annealing of Deep Boron Centers in Silicon Carbide
V. S. Ballandovich and E. N. Mokhov
pp. 160-166 Full Text: PDF (86 kB)
Edge-Photoluminescence Concentration Dependence in Semi-Insulating Undoped GaAs
V. F. Kovalenko, M. B. Litvinova, and S. V. Shutov
pp. 167-170 Full Text: PDF (66 kB)
Electrically Active Centers in Si:Er Light-Emitting Layers Grown by Sublimation Molecular-Beam Epitaxy
V. B. Shmagin, B. A. Andreev, A. V. Antonov, Z. F. Krasil'nik, V. P. Kuznetsov, O. A. Kuznetsov, E. A. Uskova, C. A. J. Ammerlaan, and G. Pensl
pp. 171-175 Full Text: PDF (70 kB)
Optical Absorption in (Pb0.78Sn0.22)1 – XInXTe (X = 0.001 – 0.005)
A. N. Veis
pp. 176-179 Full Text: PDF (65 kB)
Distribution of Charge Carriers in Dissipative Semiconductor Structures
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
pp. 180-184 Full Text: PDF (83 kB)
The Effect of Charge-Carrier Drift in the Built-in Quasi-Electric Field on the Emission Spectrum for Graded-Gap Semiconductors
V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov
pp. 185-188 Full Text: PDF (66 kB)
SEMICONDUCTOR STRUCTURE, INTERFACES, AND SURFACES
Silicon Surface Treatment by Pulsed Nitrogen Plasma
F. B. Baimbetov, B. M. Ibraev, and A. M. Zhukeshov
pp. 189-190 Full Text: PDF (36 kB)
Role of Surface Segregation in Formation of Abrupt Interfaces in Si/Si1 – xGex Heterocompositions Grown by Molecular-Beam Epitaxy with Combined Sources
L. K. Orlov and N. L. Ivina
pp. 191-196 Full Text: PDF (78 kB)
Segregation of Mobile Ions on Insulator–Semiconductor Interfaces in Metal–Insulator–Semiconductor Structures
S. G. Dmitriev and Yu. V. Markin
pp. 197-202 Full Text: PDF (85 kB)
LOW-DIMENSIONAL SYSTEMS
Photoluminescence of Anti-Modulation-Doped GaAs/AlGaAs Single Quantum Well Structures Exposed to Hydrogen Plasma
Yu. A. Bumai, G. Gobsch, R. Goldhahn, N. Stein, A. Golombek, V. Nakov, and T. S. Cheng
pp. 203-207 Full Text: PDF (67 kB)
Energy Spectrum and Optical Properties of the Quantum Dot–Impurity Center Complex
V. D. Krevchik and A. V. Levashov
pp. 208-212 Full Text: PDF (72 kB)
Injection Excitation of Luminescence in Multilayer nc-Si/Insulator Structures
Yu. A. Berashevich, B. V. Kamenev, and V. E. Borisenko
pp. 213-218 Full Text: PDF (68 kB)
Temperature Dependence of the Optical Energy Gap for the CdSxSe1 – x Quantum Dots
V. P. Kunets, N. R. Kulish, Vas. P. Kunets, M. P. Lisitsa, and N. I. Malysh
pp. 219-223 Full Text: PDF (62 kB)
The Dicke Superradiation in Quantum Heterostructures under Optical Pumping
A. I. Klimovskaya, E. G. Gule, and Yu. A. Driga
pp. 224-225 Full Text: PDF (35 kB)
Electroluminescence from AlGaAs/GaAs Quantum-Cascade Structures in the Terahertz Range
N. N. Zinov'ev, A.V. Andrianov, V. Yu. Nekrasov, L. V. Belyakov, O. M. Sreseli, G. Hill, and J. M. Chamberlain
pp. 226-229 Full Text: PDF (55 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained by Cyclic Deposition
V. P. Afanas'ev, A. S. Gudovskikh, V. N. Nevedomskii, A. P. Sazanov, A. A. Sitnikova, I. N. Trapeznikova, and E. I. Terukov
pp. 230-234 Full Text: PDF (155 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Optimal Doping of the Drift Region in Unipolar Diodes and Transistors
A. S. Kyuregyan
pp. 235-238 Full Text: PDF (54 kB)Archived web conten
Využití sociálních médií v B2B prodeji
No full textTato diplomová práce se zabývá tím, jak mohou B2B obchodníci využívat sociální média v prodeji. Na základě systematické rešerše literatury, autor zjistil, že akademici, zkoumající danou problematiku, navrhují další výzkum, a to: v kterých konkrétních krocích se dají využít sociální média v prodeji (Salo, 2017). Autor se na základě toho rozhodl zjistit, jaké sociální sítě, různé technologie a pluginy se dají využít v B2B prodeji - tzv. social sellingu. Social selling se v této práci týká primárně procesu akvizice a okrajově péčí o stávající zákazníky. Autor si vybral kvalitativní průzkum pomocí 10 hloubkových polo-strukturovaných rozhovorů, aby odhalil jak, která sociální média to jsou, tak i motivaci prodejců, proč tato média používat/nepoužívat. Aby autor dodržel správnost vyhodnocení výsledků, data byla analyzována pomocí Tématické analýzy, která v této studii vykrystalizovala 2 hlavní strategické přístupy v social sellingu. Tyto přístupy (tzv. Push a Pull strategie) obsahují praktické příklady a konkrétní aktivity, které mohou prodejci využívat v každodenní praxi. Tyto výsledky jsou prezentovány s důrazem na praktičnost a jednoduchost implementace. Tvoří proto hlavní přínos autorovo výzkumu. V poslední části autor zmiňuje výzvy a manažerská doporučení, které mohou obchodníci využít v každodenním pracovním životě.This diploma thesis focuses on social media usage in B2B sales. Based on the systematic literature review conducted by the author, he has found out that recent researchers (Salo, 2017) suggest further research in the area of how and in which sales phase should various social networking sites, technologies and plugins used. To further fill this research gap, author decided to identify these social media and their usage among B2B salespeople in the so-called social selling process. The social selling process in this thesis applies mainly to acquiring new prospects and tangentially to taking care of existing clients (follow-up step). Author has chosen a qualitative research method via conducting 10 in-depth semi-structured interviews to reveal these instruments as well as motivation of a sales person on why to use social media in the selling process. The collected data was analyzed using Thematic analysis to ensure the right procedure and to identify main themes which crystalized into 2 main strategic approaches in social selling. These approaches (Push and Pull) include practical examples of concrete activities which sales people can use in their daily jobs and are presented with focus on practicality and ease of implementation. These also form the main contribution of author`s research. In the last part, author mentions challenges in social selling and recommended managerial implications for salesforce
Technical Physics V. 49, I. 02
No full textTechnical Physics -- February 2004
Volume 49, Issue 2, pp. 143-282
Optical Properties of Metal Nanoparticles Synthesized in a Polymer by Ion Implantation: A Review
A. L. Stepanov
pp. 143-153 Full Text: PDF (350 kB)
THEORETICAL AND MATHEMATICAL PHYSICS
On a New Combined Mechanism of Hot Electron Capture in a Semiconductor
Z. S. Kachlishvili, M. G. Khizanishvili, and É. G. Khizanishvili
pp. 154-157 Full Text: PDF (66 kB)
Thermal Nonlinearity in a Photoacoustic Cell
U. Madvaliev, T. Kh. Salikhov, and D. M. Sharifov
pp. 158-164 Full Text: PDF (100 kB)
Simulation of Wave Scattering by Bodies with an Absorbing Coating and Black Bodies
A. G. Kyurkchan and D. B. Demin
pp. 165-173 Full Text: PDF (114 kB)
Method of Integral Equations in the Theory of Microstructured Optical Fibers
A. B. Sotsky and L. I. Sotskaya
pp. 174-182 Full Text: PDF (121 kB)
GASES AND LIQUIDS
Relationship between the Diffusiophoresis Rate, Evaporation Coefficient, and Size of a Large Volatile Drop
G. Yu. Yalamov
pp. 183-187 Full Text: PDF (70 kB)
Crisis of Hydrodynamic Drag of Drops in the Two-Phase Turbulent Flow of a Spray Produced by a Mechanical Nozzle at Transition Reynolds Numbers
N. N. Simakov
pp. 188-193 Full Text: PDF (73 kB)
Mechanism of Turbulent Pulsation in Channels
L. N. Pyatnitsky
pp. 194-202 Full Text: PDF (335 kB)
SOLIDS
Dynamic Properties of Ni, Cu, and Fe in the Condensed State: The Molecular Dynamics Method
A. G. Chirkov, A. G. Ponomarev, and V. G. Chudinov[dagger]
pp. 203-206 Full Text: PDF (57 kB)
Thermodynamic Grounds for the Invar and Ellinvar Effects in Ferromagnets
V. Yu. Bodryakov and A. A. Povzner
pp. 207-213 Full Text: PDF (86 kB)
OPTICS, QUANTUM ELECTRONICS
Excimer Source of Radiation for Photobiology
A. N. Malinin, A. V. Polyak, I. V. Blonskiy, and N. G. Zubrilin
pp. 214-217 Full Text: PDF (49 kB)
Hysteresis of the Spectral Components of a Femtosecond Pulse Propagating in a Nonlinear Medium
D. K. Skripov and V. A. Trofimov
pp. 218-223 Full Text: PDF (66 kB)
ACOUSTICS, ACOUSTOELECTRONICS
Resonant Destabilization of Phonon Microwave Stimulated Emission in an Acoustic Quantum Oscillator (Phaser) with Periodically Modulated Pumping
D. N. Makovetskii
pp. 224-231 Full Text: PDF (128 kB)
RADIOPHYSICS
Attenuation of Electromagnetic Waves in a Semiconductor Superlattice in a Magnetic Field
O. V. Shramkova
pp. 232-237 Full Text: PDF (89 kB)
Bulk and Surface–Bulk Magnetostatic Waves in Waveguides Produced by a Step Bias Field
A. Yu. Annenkov, S. V. Gerus, and S. I. Kovalev
pp. 238-244 Full Text: PDF (467 kB)
SURFACES, ELECTRON AND ION EMISSION
Thermal Destruction of Two-Dimensional Graphite Islands on Refractory Metals (Ir, Re, Ni, and Pt)
N. R. Gall', N. P. Lavrovskaya, E. V. Rut'kov, and A. Ya. Tontegode
pp. 245-249 Full Text: PDF (60 kB)
Formation of Rings around a Field-Emission Image and Possible Applications of This Effect
K. N. Nikolski, A. S. Baturin, A. I. Knyazev, R. G. Tchesov, and E. P. Sheshin
pp. 250-253 Full Text: PDF (282 kB)
EXPERIMENTAL INSTRUMENTS AND TECHNIQUES
Oxygen Diffusion in Uranium Dioxide in the Temperature Range of Phase Transitions
A. Ya. Kupryazhkin, A. N. Zhiganov, D. V. Risovanyi, V. D. Risovanyi, and V. N. Golovanov
pp. 254-257 Full Text: PDF (62 kB)
Fullerene Films Highly Resistant to Laser Radiation
M. A. Khodorkovskii, S. V. Murashov, T. O. Artamonova, A. L. Shakhmin, A. A. Belyaeva, and V. Yu. Davydov
pp. 258-262 Full Text: PDF (90 kB)
SHORT COMMUNICATIONS
Hysteresis in the Static Aerodynamic Characteristics of a Curved-Profile Wing
I. V. Kolin, V. G. Markov, T. I. Trifonova, and D. V. Shukhovtsov
pp. 263-266 Full Text: PDF (62 kB)
Avalanche Breakdown Voltage of n–p–n Transistors in I2L Logic Elements
S. V. Shutov, A. N. Frolov, and A. A. Frolov
pp. 267-268 Full Text: PDF (26 kB)
Base Thickness Determination from the Punch-Through Voltage for Vertical n–p–n Transistors Incorporated into I2L Elements
S. V. Shutov, A. N. Frolov, V. N. Litvinenko, and A. A. Frolov
pp. 269-271 Full Text: PDF (36 kB)
Emission Characteristics of a Lead Erosion Laser Plasma
A. K. Shuaibov, M. P. Chuchman, and L. L. Shimon
pp. 272-274 Full Text: PDF (42 kB)
Broadband Emission Spectrum of a Continuous Plasma Jet in a Mixture of Noble Gases with SF6 Molecules
V. S. Rogulich and L. L. Shimon
pp. 275-276 Full Text: PDF (34 kB)
Improvement of the Thermoelectric Branch Efficiency in the Case of the Linear Carrier Concentration Distribution
O. I. Markov
pp. 277-279 Full Text: PDF (36 kB)
Uncooled Temperature Elements Based on Semiconductor Crystals
I. M. Nesmelova, N. P. Cicina, and V. A. Andreev
pp. 280-282 Full Text: PDF (38 kB)Archived web conten
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