1,720,962 research outputs found
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology
No full textIn this work we present a novel simulation-based methodology for the defect spectroscopy in dielectric materials. The cross-correlated simulation of electrical characteristics (IV, CV, GV, BTI, charge pumping and noise) is exploited to profile the properties and energy-space distribution of the defects within the oxide bandgap. This novel defect spectroscopy technique will be applied to three case studies, i.e. Si- MOSFET gate stack optimization with either Si and beyond Si channel (InGaAs), and STO MIM DRAM capacitor scaling. The integration of these methods into the process optimization will lead to a strong reduction of the time/cost required for the development of novel device architectures
Extraction of the Defect Distributions in DRAM Capacitor Using I-V and C-V Sensitivity Maps
No full textWe propose a novel spectroscopic technique that allows determining the defect density distributions within metal-electrode-sandwiched dielectric based on J-V and C-V characteristics. The technique relies on determining "sensitivity regions" corresponding to the energy-spatial coordinates of defects affecting J-V and C-V curves. This technique is then demonstrated on RuOx/SrTiOx/RuOx metal-insulator-metal structures for DRAM capacitor applications
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs
No full textWe propose a new defect characterization technique for high-k dielectric stacks in III-V MOSFETs. This technique allows extracting the defect density from the simulations of the C-V and G-V characteristics at different frequencies. The simulation is performed using a physical distributed compact model, where the trap-assisted capture and emission processes are described in the framework of the multiphonon trap-assisted tunneling theory, including lattice relaxation. The technique, tested on InGaAs MOS devices with different gate-stacks, allows profiling the interfacial and bulk defects in the (E, z) domain. The extracted map, consistent with previous report, allows reproducing C-V and G-V curves on the whole frequency and gate voltage ranges and monitoring the quality of dielectric stacks for the optimization of the manufacturing process
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology
No full textThe semiconductor technology development requires a full understanding of material implications at the device level. This requires connecting the microscopic/atomic properties of the material (e.g. defect) to the macroscopic electrical characteristics of the device. In this scenario, we developed a new methodology, supported by a multi-scale modeling and simulation (MS) software [1], [2], which allows extracting from the simulations of the electrical characterization measurements (I-V, C-V, G-V, BTI, Charge-Pumping, noise, stress) the material and device properties that can be used for the technology development, the design of novel devices and the analysis of the device reliability also at statistical level (TDDB, leakage currents), Fig. 1
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs
No full textIn this paper we present a novel defect spectroscopy technique to investigate the properties of high-κ metal-gate oxides. This technique, based on the simultaneous simulations of I-V, C-V and G-V curves at different frequencies, allows profiling the distribution of interfacial and bulk defects inside the gate oxide and investigating the composition of the high-κ stacks on III-V materials. The proposed technique is applied to investigate the properties of high-κ stacks of InGaAs MOSFETs
A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs
No full textIncreased CMOS performance requires the introduction of alternative materials as substrate and gate dielectrics. III-V materials and in particular InGaAs can provide superior electron mobility compared to classic Si substrates. However, such substrate materials have non-optimal dielectric-semiconductor interfaces that can drastically reduce the device performance. Techniques for the extraction of interface and border trap profiles are required for the characterization and optimization of these materials. In this paper we present a new procedure relying on a physical charge-transport model including trap assisted tunneling, lattice relaxation and trap assisted generation and recombination of minority carriers. The procedure allows the extraction of interface and border trap densities from capacitance voltage characteristics measured at different frequencies. The technique is applied to characterize InGaAs MOSFETs Al2O3/ZrO2 stacks of different thicknesses and fabricated with different annealing condition
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Full text linkWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
- …
