1,721,150 research outputs found
Gli scavi nell'insediamento preistorico e nella necropoli di Ra's al-Hamra 5 (Sultanato dell'Oman)
ac module based on stacked a-si alloy amd c.si solar cells: design, technology and performance evaluation
anchorage, A
The Archaeological Map of the Murghab Delta III. The Bronze Age and Early Iron Age in the Margiana Lowlands: Facts and Methodological Proposals for a Redefinition of the Research Strategies
Shahr-i Sokhta Revised Sequence
Revisione della sequenza cronologica del sito del Bronzo di Shahr-i Sokhta in Ira
Transects and other Techniques for Systematic Sampling
Description of field survey carried out in the Delta of Murghab (Turkmenistan) with modern techniques of sampling of archaeological records. Transects and localized collection of finds allow to evaluate the ancient fields and settlement patterns inside a desertified are
Deep UV pulsed laser monitoring by CVD diamond sensors
The photoresponse of different photoconductive diamond sensors to excimer laser pulses is investigated as a function of the pulse energy
E over three order of magnitude. The integrated photoresponse pulse intensity changes according to the power law I ∝ Eβ. Initially, the
pulse intensity increases linearly with the pulse energy up to a turning point, which depends on the electronic quality of the diamond film,
where a sublinear behavior (β = 0.5) is found. The photoresponse pulse shape also changes accordingly, largely broadening at high pulse
energies. Such behavior has been interpreted in terms of monomolecular and bimolecular recombination mechanisms acting in different
pulse intensity ranges. A further reduction of β is also observed at very high intensity in less defected samples, where the induced carrier
density is high enough to cause carrier–carrier scattering and mobility reduction
Deep UV detection by CVD diamond position sensitive devices
The photoresponse of different photoconductive diamond sensors to excimer laser pulses is investigated as a function of the pulse energy E over three order of magnitude. The integrated photoresponse pulse intensity changes according to the power law I Eβ. Initially, the pulse intensity increases linearly with the pulse energy up to a turning point, which depends on the electronic quality of the diamond film, where a sublinear behavior (β=0.5) is found. The photoresponse pulse shape also changes accordingly, largely broadening at high pulse energies. Such behavior has been interpreted in terms of monomolecular and bimolecular recombination mechanisms acting in different pulse intensity ranges. A further reduction of β is also observed at very high intensity in less defected samples, where the induced carrier density is high enough to cause carrier–carrier scattering and mobility reduction
AC conductance and impedance spectroscopy of polycrystalline diamond films
Impedance measurements were performed in the frequency and temperature domain to infer the bulk and grain boundary
transport of freestanding polycrystalline diamond films.Analyzed samples appear like insulators up to a threshold temperature
where leaking becomes evident.Depending on deposition conditions and thickness, frequency independent conduction channels
add to AC ones.The real component of conductivity, measured at different temperatures, can be reduced to a master curve
according to a single hopping transport process.Ther efore, also the real and imaginary component of impedance, measured at
different temperatures in the 2–10 7 Hz frequency range, can be reduced to a master curve and plotted vs.a reduced angular
frequency showing a circuit structure more complex than a simple Voigt element.The Nyquist plot is formed by two different
lobes that have been interpreted as related to grain and grain boundary dielectric contributions.However , only a single dielectric
loss peak is achieved b
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