43 research outputs found
RD53 Collaboration and CHIPIX65 Project for the development of an innovative Pixel Front End Chip for HL-LHC
Get PDFStatus and prospects of the SIRAD irradiation facility for radiation effects studies at LNL
No full textThe SIRAD irradiation facility is located at the Tandem-ALPI accelerating system of the INFN National Laboratories of Legnaro, Italy. SIRAD is devoted to Single Event Effects and bulk damage studies on semiconductor detectors and electronic devices and systems. Here we describe the status of SIRAD by reporting the characteristics of the ion beams, of the irradiation chamber and of the monitoring and dosimetry systems for particle fluence measurements. The Ion Electron Emission Microscope which allows micrometric SEE sensitivity mapping is also briefly described. Single Event Upset (SEU) cross-section measurements of the ESA SEU monitor, presented here, show full compatibility with those obtained at irradiation facilities supported by ESA
Design of a 10-bit segmented current-steering digital-to-analog converter in CMOS 65 nm technology for the bias of new generation readout chips in high radiation environment
No full textA new pixel front end chip for HL-LHC experiments in CMOS 65nm technology is under development by the CERN RD53 collaboration together with the Chipix65 INFN project. This work describes the design of a 10-bit segmented current-steering Digital-to-Analog Converter (DAC) to provide a programmable bias current to the analog blocks of the circuit. The main requirements are monotonicity, good linearity, limited area consumption and radiation hardness up to 10 MGy. The DAC was prototyped and electrically tested, while irradiation tests will be performed in Autumn 2015
Tests of monolithic pixel detectors in SOI technology with depleted substrate
No full textThis paper reviews the R&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology
Performance of the SIRAD ion electron emission microscope
No full textAn axial ion electron emission microscope (IEEM) is now working at the SIRAD irradiation facility of the INFN Laboratories of Legnaro (Italy). The IEEM is used to precisely reconstruct the impact points of single ions, information that may be used to determine the areas of a microelectronic device under test that are sensitive to single event effects (SEE). After describing the setup briefly reviewing its working principles, we show our first time resolved ion induced electron emission images of standard calibration targets. We also discuss a preliminary measurement of ion impact detection efficiency of the IEEM system and the available trigger signals for SEE studies. We finally make an assessment of ion electron emission microscopy at SIRAD and indicate future developments
Secondary electron yield of Au and Al2O3 surfaces from swift heavy ion impact in the 2.5-7.9 MeV/amu energy range
No full textWe report on the secondary electron yields of Au and oxidized aluminum (Al2O3) by impact of heavy ions with energies ranging from 7.92 MeV/amu (12C6) to 2.54 MeV/amu (107Ag47). The obtained results, the first in this energy range using medium-heavy ions, extend the validity of proposed scaling laws obtained with lighter ions. Measurements have been performed using the SIRAD irradiation facility at the 15 MV Tandem of the INFN Laboratory of Legnaro (Italy), to evaluate the performance of ion electron emission microscopy at SIRAD
Ion Impact Detection and Micromapping With a SDRAM for IEEM Diagnostics and Applications
No full textIon electron emission microscopy (IEEM) can provide an alternative approach to microbeams for micrometric characterization of the sensitivity map to single event effects (SEE) of an electronic device. In IEEM technique, a broad (not focused) ion beam is sent onto the device under test (DUT). Secondary electrons emitted by the target surface during each ion impact are collected and focused by a system of electrostatic lenses and finally imaged by a high-rate and high-resolution position detector. We will report on the IEEM working at the SIRAD irradiation facility located at the 15 MV Tandem of INFN Legnaro National Laboratories. To estimate the IEEM resolution, a SDRAM is a good candidate to be used as a reference target, thanks to the micrometric feature size of the array of memory cells and the precise knowledge of their physical locations. Since an electronic device is not a good secondary electrons emitter, to ensure a copious and uniform emission of secondary electrons from the DUT, a very thin (100 nm) self-standing silicon nitride (Si 3 N 4 ) membrane with a Au deposition (40 nm) is mounted on the top of the SDRAM. The Au/Si 3 N 4 membrane and the underlying SDRAM are irradiated with a heavy ion beam. The physical map of ion impacts detected by the SDRAM is then compared with the one reconstructed by the IEEM in the same 500 ms time interval
Ion electron emission microscopy at SIRAD
No full textIn this contribution we describe how single event effect (SEE) studies will be performed with the ion electron emission microscope (IEEM) of the SIRAD irradiation facility located at the INFN Legnaro Laboratory. The IEEM will be used to locate with micrometric precision the impact points of impinging ions that give rise to SEE in an electronic device under test (DUT). In the IEEM technique the ion beam is not microfocused: the position of single ion impact is reconstructed by locating the secondary electron emission points on the DUT surface. We briefly review the original solutions under implementation at SIRAD, such as the opto-electronic approach used to reconstruct the secondary electron emission points by means of a fast, high-resolution imaging of point-like light sources, and a new IEEM test system under development based on a commercial memory array sensitive to single event upsets
The SIRAD irradiation facility at LNL
No full textSIRAD is the irradiation facility at the Tandem XTU accelerator of the INFN National Laboratory of Legnaro (Padova, Italy) dedicated to study radiation effects, both comulative and Single Event, on silicon detectors and microelectronic devices and systems. SIRAD is routinely used by various research groups involved in the development of semiconductor detectors and electronics to be used in radiation hostile environments as experiments at high-energy/high luminosity accelerators or in space, or interested to study the basic radiation damage mechanisms. Single Events Effects (SEE) studies with micrometric resolution can be performed at SIRAD thanks to an Ion Electron Emission Microscope (IEEM) inserted at the end of the beam line. Here we describe the SIRAD facility including the available and future beam characteristics, and the IEEM performances as well as the scientific and technological solutions which have been implemented for its construction
Position sensitive detectors for ion electron emission microscopy
No full textAt the INFN Legnaro Laboratories (Padova, Italy), an ion electron emission microscope dedicated to the study of radiation-induced damage in microelectronic devices has been recently installed. It is used to recognize, with micrometric resolution, the impact point of every single ion into the target. The development of the readout system for this apparatus led to the construction of two photon position sensitive detection (PSD) systems: the first is based on a classic semiconductor PSD sensor; the second developed around a new design that mixes two linear CCD arrays and optics to provide superior performances. This paper focuses on the temporal and spatial performances, we require from the two different kinds of sensors
