43 research outputs found
Untersuchungen zur elektrochemischen Analyse von Methan in waessrigen Loesungen
No full textAvailable from TIB Hannover: F94B1858+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman
Marschmeyer, John F. (Death, 1906-01-16)
No full textAddress: 212 Peete St.Age at death: 36 yrs.326/Pg 8/1906/M W S/City/Dr. Wm. F. Vilter/Wrassman & Barfknecht/Walnut HillsOriginal record filed in drawer labeled 'MANNING-MARSHALL, M'
3D through silicon via profile metrology based on spectroscopic reflectometry for SOI applications
No full textModeling and optimization of BiCMOS embedded through-silicon vias for RF-grounding
No full textS.83-85In this paper we demonstrate the modeling and optimization of BiCMOS embedded high aspect ratio through-silicon vias (TSV) for RF-grounding applications. The inductance and the resistance of the TSV are analyzed with respect to TSV design parameters and process effects such as sidewall-tilting and void formation. RF measurement results with extracted inductance and resistance of 24 pH and 86 m for a single TSV are in very good agreement with the simulation results. Based on the simulated and measured results, RLC-lumped-element models are developed considering the aforementioned process characteristics to provide realistic models for Process-Design-Kit (PDK) implementation
Lithography with infrared illumination alignment for advanced BiCMOS backside processing
No full text
High-Efficiency Grating Couplers for Integration into a High-Performance Photonic BiCMOS Process
No full textDevelopment of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer
No full textIn this work, the development of a Through-Silicon Via process module for multi-project wafer SiGe BiCMOS and silicon interposer is demonstrated. The TSV technology based on a via-middle approach is optimized to provide TSV process and design flexibility which is required for a multi-project wafer service. Different passive and active TSV-based components like a low-noise amplifier, RF interposer transmission lines and substrate-integrated waveguides are fabricated. The TSV process module enables a wide range of promising new applications by adding additional functionalities to conventional BiCMOS and interposer substrate technologies
