1,720,997 research outputs found
Monitoring the crystallization process of nano-confined organic molecules by synchrotron X-ray diffraction
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Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
High spatial resolution X-ray microdiffraction applied to biomaterial studies and archeometry
No full textVariations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Full text linkWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
Effects of boron-interstitial silicon clusters on interstitial supersaturation during post-implantation annealing
No full textBoron marker-layer structures have been used to investigate the effects of B doping on the evolution of the implantation damage and of the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the range 2x1013 – 1x1014 cm-2 and annealed at 740oC for times between 2 s and 4 hrs. The values of interstitial supersaturation, from the beginning of the annealing up to the complete damage recovery, have been determined for the different Si doses for a given B doping level. Damage removal has been followed by double crystal x-ray diffraction. Our results confirm that the formation of boron-interstitial silicon cluster (BICs) traps a relevant fraction of the interstitials produced by the implantation. This trapping action gives rise to a strong reduction of the interstitial supersaturation, prevents the interstitial clusters from being transformed in {113} defects and modifies the time evolution of the TED. X-ray analyses indicate also that the size of the BICs remain below 2 n
Dependence of the transient enhancement diffusion of B in Si on B concentration and ion implanted dose
No full textDamage profiles in as-implanted silicon: Fluence dependence
No full text[100] silicon wafers were implanted in random geometry and RT with process parameters in the following ranges: ion atomic number from 11 to 28 (B, N and Si ions), energy from 50 keV to 0.7 MeV, fluence from 2 X 10(12) to 3 X 10(15) cm(-2) and dose rate less than or equal to 2 X 10(12) cm(-2) s(-1). The damage profiles, measured by X-rays as strain profiles, confirmed the well-known effect that the damage accumulation is a non-linear phenomenon with fluence and gave new information about the damage evolution. While the ion projected range is almost constant, the damage projected range shifts in depth reaching a maximum value with increasing fluence. The damage accumulation on the front and on the tail edges of the disorder profile shows an asymmetric trend with respect to the profile of the energy released in nuclear collisions. These phenomena enhance with the lowering of the ion atomic number and/or increase of the ion energy
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