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    Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain

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    In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with L-G down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors. Simulations with and without scattering are used to assess the influence of quasi-ballistic transport on the MOSFET on-current. We analyze in detail the flux of back-scattered carriers. The role of scattering in different parts of the device is clarified and the MC results are compared to simple models for quasi-ballistic transport presented in the literature

    Going Beyond Counting First Authors in Author Co-citation Analysis

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    The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed

    Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study

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    In this work we have simulated the ION and its ballistic limit I-BL of MOSFETs designed according to the 2003 Roadmap down to the 45 nm node, by using a Full-Band, self-consistent Monte Carlo simulator with quantum mechanical corrections. Our results show that scattering plays an important role by limiting the current for gate length down to at least 14 nm; the impact of quasi-ballistic transport increases for L-G below approximately 50 nm and contribute most part of the ION improvements related to scaling. Thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts

    A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs

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    In this paper, a Monte-Carlo simulator, including quantum corrections to the potential and an improved physically based model for surface roughness scattering is used to study the electronic transport in double gate (DG) SO1 MOSFETs with Lc down to 14nm. Our results demonstrate that, for the explored LG values, scattering still controls the ON current (IDS), which for Lc = 25nm is overestimated by about a factor of 2 by a ballistic model. By monitoring the electrons back-scattered at the source, we discuss the role of the scattering in different parts of the device

    Variations on the Author

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    “Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship

    Appropriate Similarity Measures for Author Cocitation Analysis

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    We provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis

    Dispelling the Myths Behind First-author Citation Counts

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    We conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more sophisticated methods

    Author Index

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