137,952 research outputs found
Quench characteristics of a Cu-Stabilized 2G HTS conductor
No full textThe prospect of medium/high field superconducting magnets using 2G HTS tapes is approaching to reality with continued enhancement in the performance of these conductors. Direct measurements of 1d adiabatic quench initiation and propagation of a Cu-stabilized 2G conductor have been carried out with spatial-temporal recording of temperature and voltage following the deposition of various local heat pulses to the conductor at different temperatures between 40K and 64K carrying different transport currents. It was found that the stabilizer-free 2G tape maintains the unique characteristics previously measured in non-stabilized tape of increasing MPZ with transport current and higher quench energy at lower temperatures. The minimum quench energy, minimum propagation zone (MPZ) length are determined as a function of temperature and transport current. The change in MPZ size is investigated with measured temperature dependent E-J characteristics. The results add more detail to help understand the unique characteristics of increasing MPZ with transport current and lower temperatures
Complexos de rutênio aplicados em OLEDs: síntese e caracterização
Get PDFDissertação (mestrado) - Universidade Federal de Santa Catarina, Centro de Ciências Físicas e Matemáticas, Programa de Pós-Graduação em Física, Florianópolis, 2015.Complexos de metais de transição (MT) têm se mostrado promissores para aplicações eletro-ópticas devido a sua intensa emissão de luz resultante da mistura de estados excitados singleto e tripleto através do acoplamento spin-órbita (SOC), que teoricamente permite um rendimento quântico ( ) de 100%. Complexos utilizando Ir, Pt, Cu, Os e Ru são os emissores fosforescentes mais conhecidos com estas características e têm sido extensivamente estudados nos últimos anos, principalmente os complexos de Ru, que são de particular interesse devido à sua versatilidade e facilidade de modificações moleculares. Desta forma, este trabalho apresenta a síntese, caracterização e aplicação em estruturas de diodos orgânicos emissores de luz (OLEDs) de quatro complexos de Ru: dois conhecidos na literatura (Ru(Bpy)3 e Ru(Phen)3) e dois inéditos (Ru(TDZP)3 e Ru(PhenSe)3). Os compostos foram sintetizados a partir de uma rota simples já conhecida e de bom rendimento. A caracterização estrutural foi feita a partir da espectroscopia de infravermelho (IV), espectroscopia Raman, espectroscopia de ressonância magnética nuclear de H (RMN 1H) e espectrometria de massa de alta resolução (HRMS). As propriedades térmicas foram investigadas através da termogravimetria (TGA). As propriedades fotofísicas dos compostos em solução e filme, bem como o band gap (Eg) ótico e o rendimento quântico ( ), foram obtidos a partir da espectroscopia óptica UV-vis. As propriedades eletroquímicas e os níveis de energia (HOMO, LUMO e Eg) foram estimados a partir da voltametria cíclica (CV). A caracterização morfológica dos filmes finos produzidos via spin-coating foi feita com um microscópio de força atômica (AFM). Um comparativo interno permitiu observar que os complexos estudados apresentam características estruturais, térmicas, óticas, eletroquímicas e morfológicas semelhantes. Os filmes produzidos via spin-coating foram posteriormente empregados como camada emissora (EL) em diferentes estruturas de OLED, as quais foram caracterizadas em suas propriedades elétricas, óticas e radiométricas. Em geral, os dispositivos operaram em baixas tensões e exibiram uma banda larga de emissão no vermelho-alaranjado decorrente das transições de caráter MLCT, típica dos complexos de Ru. As estruturas de dispositivo que empregaram PVK como camada transportadora de buracos (HTL) mostraram valores de potência de radiação inferiores. Os complexos inéditos, ao contrário do que se esperava, também apresentaram baixos valores de potência de radiação em relação aos jáconhecidos. No intuito de compreender os resultados obtidos a partir dos mecanismos intrínsecos dos dispositivos, foram realizados estudos de mobilidade através da aplicação de um modelo teórico. Por fim, um breve estudo utilizando as estruturas de diodo produzidas demonstrou que os complexos inéditos apresentaram propriedades de fotocorrente e potencial para aplicações fotovoltaicas.Abstract : Transition metal complexes (MT) have shown promising results for electro-optical applications due to their intense emission of light resulting from the mixture of singlet and triplet excited states through spin-orbit coupling (SOC), which theoretically allows quantum yield (F) of 100%. Complexes using of Ir, Pt, Cu, Os and Ru are the best known phosphorescent emitters with these characteristics and have been extensively studied in recent years, particularly the Ru complexes, which are of particular interest because of their versatility and facility for molecular changes. On this way, this study presents the synthesis, characterization and application on organic light emitting diodes (OLEDs) structures of four Ru complexes: two known in the literature (Ru (bpy)3 and Ru (phen)3) and two new (Ru (TDZP)3 and Ru (PhenSe)3). The compounds were synthesized from an already known simple route with good yield. Structural characterization was made from the infrared spectroscopy (IR), Raman spectroscopy, nuclear magnetic resonance spectroscopy NMR (NMR 1H) and high resolution mass spectrometry (HRMS). The thermal properties were studied by thermogravimetric analysis (TGA). The photophysical properties of the compounds in solution and film, as well as, the optical band gap (Eg) and the quantum yield (F), were obtained from optical UV-vis spectroscopy. The electrochemical properties and energy levels (HOMO, LUMO and Eg) were estimated by cyclic voltammetry (CV). The morphological characterization of thin films produced via spin-coating was made with an atomic force microscope (AFM). An internal comparison allowed us to notice that the studied complexes have similar structural, thermal, optical, electrochemical and morphological. The films produced via spin-coating were subsequently used as emitting layer (EL) in different OLED structures that were characterized in their electric, optical and radiometric properties. In general, the devices worked at low voltages and exhibited a wide emission band in the red-orange arising from the characteristic MLCT transitions, typical of Ru complexes. Device structures that employed PVK as hole transporting layer (HTL) showed lower radiation power values. The new complexes, contrary to what was expected, also had low radiation power values in relation to those already known. In order to understand the results obtained from the intrinsic mechanisms of the devices, studies of mobility were done by applying a theoretical model. Finally, a brief study using the diode structures produced showed that the newcomplexes exhibited photocurrent properties and potential for photovoltaic applications
THE PREDICTION OF THE CUTTING FORCE IN BALL-END MILLING WITH A FLEXIBLE CUTTER
No full textIn some situations, such as machining sculptured surfaces with long or slender ball-end mills, the cutter deflection in ball-end milling is a main factor affecting the machining accuracy. In this paper, a mechanistic cutting force prediction model of ball-end milling in consideration of cutter deflection is presented and its machining characteristics are discussed with experimental results. This model takes account of the changes in chip thickness by the deflection of a cutter and the cutter deflection is obtained by solving an equilibrium equation between cutting force and reaction force. The model was verified from the measurements of cutting forces for different machining conditions
PRECISION POCKETTING IN THE BALL END MILLING PROCESS
No full textMany die/mold parts including sculptured surfaces are usually completed by pocketting with ball end mill. Therefore the precision machining in pocketting is important. It has been noted that the tool deflection produced by the cutting force is a main cause of machining error in pocketting. The instantaneous deflection is dependent upon the static stiffness of tool and the instantaneous cutting force. In this study, the stiffness of holder was obtained by experiment and the stiffness of cutter was analyzed by the discrete elements along cutter length. The instantaneous cutting force was obtained by using the iteration method with the linear interpolation of basic machining data. By predicting the tool deflection in pocketting, a method improving the machining accuracy is suggested
A tool deflection compensation system for end milling accuracy improvement
No full textIn an effort to reduce machining surface errors due to tool deflection in the end milling process, methods regulating cutting forces have been implemented with online feed rate controls. Such schemes are able to improve the parts dimensional accuracy, but unfortunately they can exhibit undesirable aspects in which the alleviation of the cutting conditions deteriorates the productivity. In addition the frequent changes of the feed rate would spoil the surface quality. As a new approach to achieve the precision machining efficiently, this paper introduces a tool deflection compensation system. This compensation system is a computer controlled special tool adapter which is capable of measuring the cutting forces and minutely adjusting the position of the tool without interfacing with the NC controller of the milling machine. Such a system allows for on-line estimation of the teal deflections and reduction of the surface errors. Experimental investigations for typical shaped workpieces representing various end milling situations are performed to verify the ability of the system to suppress the surface errors due to tool deflections in more productive machining condition
- …
