1,721,046 research outputs found
Comment On >Assessment Of Field-Induced Quantum Confinement In Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor> Appl. Phys. Lett. 105, 082108 (2014)
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programNSF NASCENT ERCMicroelectronics Research CenterElectrical and Computer Engineerin
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
Appropriate Similarity Measures for Author Cocitation Analysis
Get PDFWe provide a number of new insights into the methodological discussion about author cocitation analysis. We first argue that the use of the Pearson correlation for measuring the similarity between authors’ cocitation profiles is not very satisfactory. We then discuss what kind of similarity measures may be used as an alternative to the Pearson correlation. We consider three similarity measures in particular. One is the well-known cosine. The other two similarity measures have not been used before in the bibliometric literature. Finally, we show by means of an example that our findings have a high practical relevance.information science;Pearson correlation;cosine;similarity measure;author cocitation analysis
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Schrödinger equation Monte Carlo-3D for simulation of nanoscale MOSFETs
Get PDFtextA new quantum transport simulator -- Schrödinger Equation Monte Carlo in Three Dimensions (SEMC-3D) -- has been developed for simulating the carrier transport in nanoscale 3D MOSFET geometries. SEMC-3D self-consistently solves: (1) the 1D quantum transport equations derived from the SEMC method with open boundary conditions and rigorous treatment of various scattering processes including phonon and surface roughness scattering, (2) the 2D Schrödinger equations of the device cross sections with close boundary conditions to obtain the spatially varying subband structure along the conduction channel, and (3) the 3D Poisson equation of the whole device. Therefore, SEMC-3D can provide a physically accurate and electrostatically selfconsistent approach to the quantum transport in the subbands of 3D nanoscale MOSFETs. SEMC-3D has been used to simulate Si nanowire (NW) nMOSFETs to both demonstrate the capabilities of SEMC-3D, itself, and to provide new insight into transport phenomena in nanoscale MOSFETs, particularly with regards to interplay among scattering, quantum confinement and transport, and strain.Electrical and Computer Engineerin
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Schrödinger equation Monte Carlo simulation of nano-scaled semiconductor devices
No full texttextSemiconductor devices have been continuously scaled into the deep submicron
regime. As a result, quantum effects which were neglected in semiclassical
models become more and more important. Meanwhile, scattering still remains
important down to the gate length around 10 nm. Accurate quantum transport
simulators with scattering will be needed to explore the essential device physics. The
work of this dissertation project is aimed at developing an accurate quantum transport
simulation tool for deep submicron device modeling, as well as utilizing this newly
developed simulation tool to study the quantum transport and scattering effects in
ultra-scaled semiconductor devices.
The quantum transport simulator “Schrödinger Equation Monte Carlo”
(SEMC) provides a physically rigorous treatment of quantum transport and phasebreaking
inelastic scattering (in 3D) via real (actual) scattering processes such as
optical and acoustic phonon scattering. SEMC has been used to simulate carrier
transport in nano-scaled devices in order to gauge the potential reliability of
semiclassical models, phase-coherent quantum transport, and other limiting models as
the transition from classical to quantum transport is approached. SEMC has also been
successfully applied to study the carrier capture and transport in tunnel injection
lasers. In this work, a 2D version of SEMC − SEMC-2D − has been developed. The
quantum transport equations are solved self-consistently with Poisson equation.
SEMC-2D has been used to simulate quantum transport in nano-scaled double gate
MOSFETs. Simulation results serve not only to demonstrate the capability of this
new quantum transport simulator, but also to illuminate the importance of physically
accurate simulation of scattering for predictive modeling of transport in nano-scaled
MOSFETs.Electrical and Computer Engineerin
Dispelling the Myths Behind First-author Citation Counts
Get PDFWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
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Modeling of graphene-based FETs for low power digital logic and radio frequency applications
Get PDFtextThere are many semiconductors with nominally superior electronic properties compared to silicon. However, silicon became the material of choice for MOSFETs due to its robust native oxide. With Moore's observation as a guiding principle, the semiconductor industry has come a long way in scaling the silicon MOSFETs to smaller dimensions every generation with engineering ingenuity and technological innovation. As per the 2012 International Technology Roadmap for Semiconductors (ITRS), the MOSFET is expected to be scaled to near 6 nm gate length by 2025. However, materials, design and fabrication capabilities aside, basic physical considerations such as source to drain quantum mechanical tunneling, channel to gate tunneling, and thermionic emission over the channel barrier suggest an end to the roadmap for CMOS is on the horizon. The semiconductor industry is already aggressively looking for the next switch which can replace the silicon FET in the long term. My Ph.D. research is part of the quest for the next switch. The promises of process compatibility with existing CMOS technologies, fast carriers with high mobilities, and symmetric conduction and valence bands have led to graphene being considered as a possible alternative to silicon. This work looks at three devices based on graphene using first principles atomistic transport simulations and compact models capturing essential physics: the large-area graphene RF FET, the Bilayer pseudoSpin FET, and the double electron layer resonant tunneling transistor. The characteristics and performance of each device is explored with a combination of SPICE simulations and atomistic quasi static transport simulations. The BiSFET device was found to be a promising alternative to CMOS due to extremely low power dissipation. Finally, I have presented formalism for efficient simulation of time dependent transport in graphene for beyond quasi static performance analysis of the graphene based devices explored in this work.Electrical and Computer Engineerin
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