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Luminescence, recombination and laser damaging of a-CN:OH films grown by reactive sputtering
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Paramagnetic centres and microstructure of reactively sputtered amorphous carbon nitride thin films
No full textGoing Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Hall effect studies and magnetic behaviour in Fe-nanoparticle embedded multi wall CNTs
No full textWith reference of our previous report [JNN 9, (2009) 6799], here we extended our work on ironnanoparticles embedded multiwall carbon nanotubes (MWCNTs) that were grown at 850 °C using chemical vapour deposition process that shows ferromagnetic as well as magnetic anisotropic behaviour due to the non-uniform distribution of 'Fe' particles in CNTs. The separation of 'Fe' nanoparticles from each other by the nonmagnetic carbon nanotube walls is preferably suitable for the application of magnetic storage devices, magnetic recording media and electromagnetic devices. The spin-related phenomenon in MWCNTs is demonstrated through a temperature dependent resistance curve through metal-insulator transition at ∼12.6 K and field effect magneto-resistance (MR). The minimal resistance is observed at 12.6 K. This result could provide the fabrication of nanometric-scale electronic devices and opening new opportunities to uncover deeper aspects of negative magnetoresistance effect
Photoluminescence investigation of carbon nitride-based films deposited by reactive sputtering
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