22 research outputs found
Numerical simulations of ignition features of premixtures in three-dimensional vortex flows
No full textSemiconductors V. 36, I. 03
No full textSemiconductors -- March 2002
Volume 36, Issue 3, pp. 239-362
ATOMIC STRUCTURES AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Clustering of Defects and Impurities in Hydrogenated Single-Crystal Silicon
Kh. A. Abdulin, Yu. V. Gorelkinskii, B. N. Mukashev, and S. Zh. Tokmoldin
pp. 239-249 Full Text: PDF (141 kB)
Rapid Thermal Annealing of Gallium Arsenide Implanted with Sulfur Ions
V. M. Ardyshev and M. V. Ardyshev
pp. 250-253 Full Text: PDF (45 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
The Preexponential Factor in Mott's Law for Variable-Range-Hopping Conduction in Lightly Compensated p-Hg0.8Cd0.2Te Crystals
V. V. Bogoboyashchii
pp. 254-258 Full Text: PDF (81 kB)
E0 Photoreflectance Spectra of GaAs: Identification of the Features Related to Impurity Transitions
R. V. Kusmenko and É. P. Domashevskaya
pp. 259-262 Full Text: PDF (53 kB)
Temperature Dependence of Thermoelectric Power in n-InSb in a Transverse Quantizing Magnetic Field
M. M. Gadzhialiev
pp. 263-264 Full Text: PDF (38 kB)
Effect of Annealing in Oxygen Radicals on Luminescence and Electrical Conductivity of ZnO:N Films
A. N. Georgobiani, A. N. Gruzintsev, V. T. Volkov, and M. O. Vorob'ev
pp. 265-269 Full Text: PDF (64 kB)
Effective Exciton Mass in III–V Semiconductors
N. S. Averkiev and K. S. Romanov
pp. 270-272 Full Text: PDF (41 kB)
Special Features of Charge Transport in PbGa2Se4 Crystals
B. G. Tagiev, N. N. Musaeva, and R. B. Dzhabbarov
pp. 273-275 Full Text: PDF (50 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Efficiency of the Intercalation of Aluminum Atoms under a Monolayer and Submonolayer Two-Dimensional Graphite Film on a Metal
N. R. Gall, E. V. Rut'kov, and A. Ya. Tontegode
pp. 276-281 Full Text: PDF (74 kB)
Simulation of Hydrogen Penetration into p-Type Silicon under Wet Chemical Etching
O. V. Feklisova, E. B. Yakimov, and N. A. Yarykin
pp. 282-285 Full Text: PDF (54 kB)
Internal Ionization Energy in II–VI Compounds
A. V. Komashchenko, V. N. Komashchenko, K. V. Kolezhuk, G. I. Sheremetova, V. D. Fursenko, and Yu. N. Bobrenko
pp. 286-289 Full Text: PDF (55 kB)
Influence of the Misfit-Dislocation Screw Component on the Formation of Threading Dislocations in Semiconductor Heterostructures
E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko, and A. K. Gutakovskii
pp. 290-297 Full Text: PDF (169 kB)
LOW-DIMENSIONAL SYSTEMS
Optical Properties of Ultradisperse CdSexTe1 – x (0 <= x <= 1) Particles in a Silicate Glass Matrix
I. V. Bodnar, V. S. Gurin, A. P. Molochko, N. P. Solovei, P. V. Prokoshin, and K. V. Yumashev
pp. 298-306 Full Text: PDF (267 kB)
Soliton Shape Stabilization in a Superlattice with Next-to-Nearest Neighbor Spectrum in a Field of a Nonlinear Wave
S. V. Kryuchkov and É. G. Fedorov
pp. 307-310 Full Text: PDF (54 kB)
Resonance Transitions between Split Levels in Three-Barrier Nanostructures and the Prospects of Using these Structures in Devices Operating in the Submillimeter-Wave Band
E. I. Golant and A. B. Pashkovskii
pp. 311-318 Full Text: PDF (91 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Microwave Photoconductivity in Nanocrystalline Porous Titanium Oxide Subjected to Pulsed Laser Excitation
E. A. Konstantinova, V. Yu. Timoshenko, P. K. Kashkarov, V. G. Kytin, V. Ya. Gaivoronskii, H. Porteanu, Th. Dittrich, and F. Koch
pp. 319-324 Full Text: PDF (85 kB)
Special Features of Recombination of Nonequilibrium Charge Carriers in Porous Silicon with Different Nanostructure Morphologies
M. G. Lisachenko, E. A. Konstantinov, V. Yu. Timoshenko, and P. K. Kashkarov
pp. 325-329 Full Text: PDF (63 kB)
Changes in Properties of a /Silicon System during Gradual Etching off of the Porous Silicon Layer
E. F. Venger, T. Ya. Gorbach, S. I. Kirillova, V. E. Primachenko, and V. A. Chernobai
pp. 330-335 Full Text: PDF (124 kB)
Carrier Transport in Porous Silicon
N. S. Averkiev, L. P. Kazakova, and N. N. Smirnova
pp. 336-339 Full Text: PDF (65 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Solar Cells Based on CuIn1 – xGaxSe2 Films Obtained by Pulsed Laser Evaporation
V. F. Gremenok, I. V. Bodnar', V. Yu. Rud', Yu. V. Rud', and H.-W. Schock
pp. 340-343 Full Text: PDF (57 kB)
Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers
N. A. Pikhtin, S. O. Sliptchenko, Z. N. Sokolova, and I. S. Tarasov
pp. 344-353 Full Text: PDF (120 kB)
The Use of SiC Triode Structures as Detectors of Nuclear Particles
N. B. Strokan, A. M. Ivanov, N. S. Savkina, D. V. Davydov, E. V. Bogdanova, and A. A. Lebedev
pp. 354-357 Full Text: PDF (56 kB)
Electrical Properties of Silicon Layers Implanted with Erbium and Oxygen Ions in a Wide Dose Range and Thermally Treated in Different Temperature Conditions
O. V. Aleksandrov, A. O. Zakhar'in, N. A. Sobolev, and Yu. A. Nikolaev
pp. 358-361 Full Text: PDF (60 kB)
PERSONALIA
Igor' Georgievich Neizvestnyi (on his 70th birthday)
p. 362 Full Text: PDF (85 kB)Archived web conten
Development and experimental investigation of small-sized thermo-electric generator with diffusion combustion
No full textFormation of dynamic spatial flame structures for gas burning in microchannels with temperature gradients on walls
No full textQuantum Behavior of Water Molecules Confined to Nanocavities in Gemstones
No full textWhen water is confined to nanocavities, its quantum mechanical behavior can be revealed by terahertz spectroscopy. We place H2O molecules in the nanopores of a beryl crystal lattice and observe a rich and highly anisotropic set of absorption lines in the terahertz spectral range. Two bands can be identified, which originate from translational and librational motions of the water molecule isolated within the cage; they correspond to the analogous broad bands in liquid water and ice. In the present case of well-defined and highly symmetric nanocavities, the observed fine structure can be explained by macroscopic tunneling of the H2O molecules within a six-fold potential caused by the interaction of the molecule with the cavity walls
21st October 2008 - LHC Inauguration Ceremony family photograph in SM18.
No full text21st October 2008 - LHC Inauguration Ceremony family photograph in SM18. Front row, from left to right : British Minister of State for Science and Innovation, Lord Drayson of Kensington; Hungarian Minister for Research, Science and Innovation K. Molnar; German Federal Minister of Education and Research A. Schavan; Slovak Deputy Prime Minister and Minister of Education J. Mikolaj; Président de la Confédération suisse P. Couchepin; Directeur général du CERN R. Aymar; Premier Ministre de la République française F. Fillon; Portuguese Minister for Science, Technology and Higher Education J. M. Gago; Ministre belge des PME, des Indépendants, de l'Agriculture et de la Politique scientifique S. Laruelle; Ambassador of Italy to the Office of the United Nations and other international organisations in Geneva G. Caracciolo di Vetri. Second row, from left to right: Czech Deputy Minister of Education, Youth and Sports, responsible for Science and Universities V. Ruzicka; Extraordinatory and Plenipotentiary Ambassador of the Kingdom of the Netherlands to the Office of the United Nations and other international organisations in Geneva B. J. Van Eenennaam; Polish Undersecretary of State, Ministry of Science and Higher Education J. Duszynski; Norwegian State Secretary, Ministry of Research and Higher Education J. Revold; Swedish Minister for Higher Education and Research L. Leijonborg; Finnish State Under-Secretary for Foreign Affairs E. Hamilo; Greek Deputy Minister, Ministry for the Environment, Physical Planning and Public Works T. Xanthopoulos; Spanish State Secretary for Research C. Martinez; Extraordinatory and Plenipotentiary Ambassador of Denmark to the Office of the United Nations and other international organisations in Geneva M.-L. Overvad; Representative of the Austrian Ministry for Science and Research H.-P. Kowalski; Bulgarian Deputy Minister of Education and Science V. Dobreva. Back row, from left ro right : Japanese Senior Vice Minister of Education, Culture, Sports, Science and Technology T. Yamauchi; Chairman of the Indian Atomic Research Centre A. Kakodkar; European Commissioner for Science and Research J. Potocnik; Russian Minister for Education and Science A. Fursenko; Turkish Minister for Energy and Natural Resources H. Güler; Israeli Minister of Science, Culture & Sport G. Majadle; Ambassador of the United States of America to the United Nations and other international organisations in Geneva W. W. Tichenor
