1,721,064 research outputs found

    R. Murri, Battaglie d'oggi. Cultura del Clero

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    M. J. R. Murri, Battaglie d'oggi. Cultura del Clero. In: Revue néo-scolastique. 9ᵉ année, n°34, 1902. p. 294

    Hall mobility in doped Si:H,Cl films.

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    The Hall mobility μH in phosphorus- and boron-doped Si:H, Cl films was measured in the temperature range 130–300 K. The conductivity is markedly influenced by the doping, and the activation energies of both the Hall mobility and the conductivity as functions of the temperature are much lower in doped samples than in undoped samples. The process tends to become unactivated at higher doping levels

    Hall mobility in undoped microcrystalline Si:H,Cl films.

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    The Hall mobility in undoped microcrystalline Si:H, Cl films has been measured in the temperature range 130<T<300K. The dependence of μH on the temperature clearly evidences two different transport mechanisms. Above T0=200 K, the Hall mobility has an activation energy of about 0.3 eV, while below T0 it is practically temperature independent

    Going Beyond Counting First Authors in Author Co-citation Analysis

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    The present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed

    Toward room temperature ferro-magnetism of Ge:Mn systems

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    We investigate the magnetic properties of Mn(x)Ge(1-x)/Ge(100) films. We show that the choice of growth temperature and Mn content is crucial for achieving optimal magnetic performance. With a substrate temperature of 160°C during film deposition, and Mn concentration between 2.7% and 4.4%, hysteresis is observed up to about 250 K. However, the magnetic loop maintains a saturating behaviour at high fields up to room temperature. For larger Mn concentrations the magnetic response is strongly suppressed, suggesting a possible segregation of manganese
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