85 research outputs found

    792271suppmat – Supplemental material for Performance and predictors of recruitment success in National Heart, Lung, and Blood Institute’s cardiovascular clinical trials

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    Supplemental material, 792271suppmat for Performance and predictors of recruitment success in National Heart, Lung, and Blood Institute’s cardiovascular clinical trials by Victoria L Pemberton, Frank Evans, Jamie Gulin, Ellen Rosenberg, Ebyan Addou, Kristin M Burns, David J Gordon, Gail D Pearson and Jonathan R Kaltman in Clinical Trials</p

    Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

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    Covalent p-type doping of WSe2 thin films grown by molecular beam epitaxy and WSe2 exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe2 lattice as well as tunable nitrogen concentration with N2 plasma exposure time. Furthermore, nitrogen incorporation induces compressive strain on the WSe2 lattice after N2 plasma exposure. Finally, atomic force microscopy and scanning tunneling microscopy reveal that N2 plasma treatment needs to be carefully tuned to avoid any unwanted strain or surface damage

    High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3

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    We report an excellent growth behavior of a high-&kappa; dielectric on ReS2, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al2O3 thin film on the UV-Ozone pretreated surface of ReS2 yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al2O3 thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al2O3 was achieved using a UV-Ozone pretreatment. The ReS2 substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S&ndash;O bonds presents an effective route for a uniform and conformal high-&kappa; dielectric for advanced devices based on 2D materials

    Effect of In-doping on electrochromic behavior of NiO thin films

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    Undoped and Indium doped Nickel Oxide (NiO) thin layers with different doping content (2, 4, 6 at.%) were successfully deposited on glass and Indium-doped Tin Oxide (ITO) substrates using spray pyrolysis (SP) technique. The effect of indium on the microstructural, morphological, optical, and electrochromic behaviors of NiO films was investigated by X-ray diffraction (XRD), Raman spectroscopy, Scanning Electron Microscopy coupled with Energy Dispersive X-ray Spectroscopy, UV–Vis-NIR spectrophotometry. XRD examination shows that all NiO layers have a polycrystalline cubic phase with a preferred orientation along the (111) plane. Raman spectroscopy proves the XRD result. SEM images show nanograins formation in all the sprayed films. The EDS analysis and the elemental mapping reveal the homogeneous distribution of the elements. The optical analysis reveals an average transmission of about 72% in the visible light region and an optical band gap energy of 3.54 eV for the undoped sample. These values decreased with increasing Indium content to reach 65% and 3.46 eV, respectively for the 6 at.% In-doped sample. The electrochromic behavior of NiO films deposited on ITO substrates was measured by cyclic voltammetry in a 2 M KOH aqueous electrolyte. The results show that a specific capacitance of 66 F. g − 1 at 5 mV.s − 1, an optical density variation of 43%, and a coloration efficiency of 93.74 cm2/C were obtained for 2 at.% In doped NiO. These values are considerably higher than those obtained for the undoped films, indicating that the In doping improved the electrochromic performance of nickel oxide films. © 202

    Parallel synchronous algorithm for nonlinear xed point problems

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    We give in this paper a convergence result concerning parallel synchronous algorithm for nonlinear fixed point problems with respect to the Euclidian norm in R n . We then apply this result to some problems related to convex analysis like minimization of functionals, calculus of saddle point, and convex programming

    Boundary-value Problems for the One-dimensional p-Laplacian with Even Superlinearity

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    This paper is concerned with a study of the quasilinear problem -(|u'|^{p-2}u')'= |u|^p-\lambda, in (0,1) u(0)=u(1)=0u(0) =u(1) =0, where p greater than 1 and λR\lambda \in {\Bbb R} are parameters. For λ\lambda positive, we determine a lower bound for the number of solutions and establish their nodal properties. For λ0\lambda \leq 0, we determine the exact number of solutions. In both cases we use a quadrature method.Mathematic

    Parallel syncrhronous algorithm for nonlinear fixed point problems

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    We give in this paper a convergence result concerning parallel synchronous algorithm for nonlinear fixed point problems with respect to the euclidean norm in R?. We then apply this result to some problems related to convex analysis like minimization of functionals, calculus of saddle point, convex programming

    Helsinki Startup City Guide

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    This thesis is a product-oriented thesis. The aim of the thesis is to create valuable and quality content for the commissioning party, StartUs. The content is educational and takes form as a guide. The guide was done with the support of Haaga-Helia StartUp School. The theoretical framework consists of startup and content marketing theory, and is essential in providing the reader of this thesis the understanding of why the guide is important for the commissioning party and its target audience. Defining a startup can be tricky as there are several different definitions to what is a startup. In addition, not all startups are alike as there are multiple types of startups each of its own goals and definition of success. All of the startup types can benefit from incorporating lean startup methodologies. Some of the core principles of the lean startup methodology are Customer Development and the build-measure-learn loop both of which ultimately allow startups to avoid failing and creating a greater demand for their product or service through the understanding of the true needs of the customers. Nowadays, content marketing is imperative for a company in order to gain visibility and reach the right audience. In order to stand out from competitors and achieve the attention of consumers and fulfill the company’s business goals, relevant and valuable content must be produced and distributed. The product of this thesis is the Helsinki Startup City Guide. It is a practical guide for startup enthusiasts and everyone interested and considering to establish a startup company in Helsinki. The guide lists the most relevant information one must know about the startup ecosystem of Helsinki. This thesis and the product were produced within three weeks due to limited time constraints. Both the author and the commissioning parties are pleased with the end result of the product

    Strongly quasibounded maximal monotone perturbations for the Berkovits–Mustonen topological degree theory

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    AbstractLet X be a real reflexive Banach space with dual X∗. Let L:X⊃D(L)→X∗ be densely defined, linear and maximal monotone. Let T:X⊃D(T)→2X∗, with 0∈D(T) and 0∈T(0), be strongly quasibounded and maximal monotone, and C:X⊃D(C)→X∗ bounded, demicontinuous and of type (S+) w.r.t. D(L). A new topological degree theory has been developed for the sum L+T+C. This degree theory is an extension of the Berkovits–Mustonen theory (for T=0) and an improvement of the work of Addou and Mermri (for T:X→2X∗ bounded). Unbounded maximal monotone operators with 0∈D˚(T) are strongly quasibounded and may be used with the new degree theory

    Engineering the Palladium–WSe2 interface chemistry for field effect transistors with high-performance hole contacts

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    Palladium has been widely employed as a hole contact to WSe2 and has enabled, at times, the highest WSe2 transistor performance. However, there are orders of magnitude variation across the literature in Pd–WSe2 contact resistance and ION/IOFF ratios with no true understanding of how to consistently achieve high-performance contacts. In this work, WSe2 transistors with impressive ION/IOFF ratios of 106 and Pd–WSe2 Schottky diodes with near-zero variability are demonstrated utilizing Ohmic-like Pd contacts through deliberate control of the interface chemistry. The increased concentration of a PdSex intermetallic is correlated with an Ohmic band alignment and concomitant defect passivation, which further reduces the contact resistance, variability, and barrier height inhomogeneity. The lowest contact resistance occurs when a 60 min post-metallization anneal at 400 °C in forming gas (FG) is performed. X-ray photoelectron spectroscopy indicates this FG anneal produces 3× the concentration of PdSex and an Ohmic band alignment, in contrast to that detected after annealing in ultrahigh vacuum, during which a 0.2 eV hole Schottky barrier forms. Raman spectroscopy and scanning transmission electron microscopy highlight the necessity of the fabrication step to achieve high-performance contacts as no PdSex forms, and WSe2 is unperturbed by room temperature Pd deposition. However, at least one WSe2 layer is consumed by the necessary interface reactions that form PdSex requiring strategic exploitation of a sacrificial WSe2 layer during device fabrication. The interface chemistry and structural properties are correlated with Pd–WSe2 diode and transistor performance, and the recommended processing steps are provided to enable reliable high-performance contact formation
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