1,721,028 research outputs found
Ultrashallow profiling of semiconductors by secondary ion mass spectrometry: methods and applications
No full textThe effect of the impurity content and of the surface on the electrical activation of low energy implanted boron in crystalline Si
No full textGoing Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon
No full textIn this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion. (C) 1999 Elsevier Science B.V. All rights reserved
Clustering of ultra-low-energy implanted Boron in Silicon during postimplantation annealing
No full textActivation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling
No full textA novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching
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