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Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion
No full textReply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussio
EPR study of He-implanted Si
No full textElectron paramagnetic resonance has been used to study the influence of thermal treatments on defect evolution in helium-implanted Czochralski single-crystal silicon. It is shown that the thermal treatment induces helium migration and capturing by vacancy clusters that transform into pressurized bubbles. Such transformation produces a strain field, which in turn affects the dangling bond's lineshape in its vicinity. It is shown that the strain field causes asymmetry of dangling bond lineshape that is proportional to the strain field. This selects the electron paramagnetic resonance as a convenient technique For the monitoring of the early phases of bubble formation. (C) 2000 Elsevier Science S.A. All rights reserved
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon
No full textElectron paramagnetic resonance spectrum of the proton-related thermal donor (TD) assigned as NL8 paramagnetic center has been detected at 110 K after heat treatment of the hydrogen-implanted Czochralski-Si at 773 K. The effect of temperature on reversible transformations of the anisotropic spectrum of NL8 center into the isotropic singlet line was studied in the temperature region from 110 to 240 K. The analysis of the singlet provides an evidence that this signal originates from the proton- related shallow donor type at g = 1.9987. The changes in the linewidth have been used to evaluate the parameters [1/tau = 0.66 x 10(12) exp(-Delta E/kT); Delta E = 169 meV] for thermally activated electron emission to the conduction band from the second donor state of the NL8 center. These results represent direct experimental evidence of reversible transformation of the TD+ charged center into the shallow donor-type center. (C) 1998 American Institute of Physics. [S0003-6951(98)01548-4]
Going Beyond Counting First Authors in Author Co-citation Analysis
Full text linkThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Ambient Gas Induced SiC-like Structures in Edge-Defined Film-Fed Growth Polycrystalline Silicon Samples
No full textVariations on the Author
Full text link“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
GISAXS study of structural relaxation in amorphous silicon
No full textThe structural changes induced in single crystal silicon implanted with silicon ions above the amorphisation threshold were studied by Grazing Incidence Small Angle X-ray Scattering technique. Silicon samples were implanted with silicon ions at 30 keV to the dose of 5 x 10(15) atoms/cm(2). A well-defined layer of amorphous silicon, thick about 40 nm was formed below the surface. As implanted samples were subsequently relaxed by thermal annealing at 350 degreesC. The analysis have shown that the amorphous layer exhibits a granular structure that develops with annealing. A model will be presented for the film structure changes obtained by data evaluation based on the distorted wave Born approximation. (C) 2002 Elsevier Science B.V. All rights reserved
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