169,983 research outputs found

    Le politiche del sociale nella Terza Repubblica francese (1880-1930)

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    Il saggio ripercorre la parabola del femminismo d’oltralpe in connessione con gli sviluppi della legislazione sociale nella Terza Repubblica. Le rivendicazioni delle donne saranno a lungo caratterizzate da finalità ispirate a un differenzialismo maternalista: protezione dei bambini e delle madri e, in generale, difesa della donna in quanto attore sociale debole e al contempo imprescindibile. Impostazione in sintonia con il maternalismo di Stato, ovvero con una 'politique des femmes' rivolta alla donna nella sua duplice accezione di moglie e madre. A fare da controcanto alcune voci fuori dal coro, come quella della femminista anarchica e neo-malthusiana Nelly Roussel

    Phonon-induced spin relaxation of conduction electrons in silicon crystals

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    Experimental works managing electrical injection of spin polarization in n-type and p-type silicon have been recently carried out up to room-temperature. In spite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on phonon-induced electron spin depolarization in silicon structures, in a wide range of values of lattice temperature, doping concentration and amplitude of external fields, is still at a developing stage. In order to investigate the spin transport of conduction electrons in lightly doped n-type Si crystals, a set of semiclassical multiparticle Monte Carlo simulations has been carried out. The mean spin depolarization time and length of drifting electrons, heated by an electric field, have been calculated. A good agreement is found between our numerical findings and those computed by using different theoretical approaches and recent experimental results obtained in spin transport devices. Our Monte Carlo outcomes, in ranges of temperature and field amplitude yet unexplored, can be used as a guide for future experimental studies oriented towards a more effective optimization of room-temperature silicon-based spintronic devices

    La responsabilità per la violazione online del diritto d'autore nella giurisprudenza della Corte di Giustizia dell'Unione Europea: il caso McFadden c. Sony

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    Nella pronuncia pregiudiziale a commento la Corte di Giustizia Ue fornisce importanti chiarimenti in merito all’interpretazione dell’art. 12 della Direttiva 2000/31/CE sul commercio elettronico, che limita la responsabilità dei prestatori intermediari di servizi per l’eventuale violazione del diritto d’autore in caso di «semplice trasporto» d’informazioni.In the preliminary ruling under review, the EU Court of Justice provides important clarification on the interpretation of Article. 12 of Directive 2000/31/EC on electronic commerce, which limits the liability of intermediary service providers on the possible infringement of copyright in the case of “simple” information transport

    L'ammissibilità dei danni punitivi ai sensi della Direttiva 2004/48/CE sul rispetto dei diritti di proprietà intellettuale: il caso SFP c. OTK

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    Nella pronuncia pregiudiziale a commento la Corte di Giustizia Ue fornisce importanti chiarimenti in merito all’interpretazione dell’art. 13, par. 1, lett. b), della Direttiva 2004/48/CE, che disciplina la determinazione dell’entità del risarcimento dei danni in caso di violazione dei diritti di proprietà intellettuale e, in particolare, in merito alla compatibilità con la disposizione richiamata di una disciplina nazionale che consenta al titolare di un diritto proprietà intellettuale di chiedere il risarcimento dei danni al presunto autore della violazione per un importo che potrebbe essere descritto come « punitivo ».In the preliminary ruling under review, the EU Court of Justice provides important clarification on the interpretation of Article 13, par. 1, lett. a), of Directive 2004/48/EC, which governs the determination of the extent of compensation in the event of a breach of intellectual property rights and, in particular, on the compatibility with the provision of a national law which permits the holder of an intellectual property right to claim damages to the alleged infringer for a predetermined amount that could be described as “punitive”

    Phonon-induced spin depolarization of conduction electrons in silicon crystals

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    In last decade the process of spin relaxation of conduction electrons in semiconductor structures has been widely investigated, in order to use spin polarization as information carrier [1]. However, each initial non-equilibrium orientation decays over time during the transport. Thus, to make feasible the implementation of spin-based electronic devices, the features of spin relaxation at relatively high temperatures, jointly with the influence of transport conditions, should be fully understood [1]. Electrical injection of spin polarization in silicon structures up to room temperature has been experimentally carried out [2]. Despite these promising experimental results, a comprehensive theoretical framework accounting for the spin depolarization process in silicon crystals, in a wide range of temperature values, doping concentration, and amplitude of external fields, is still in a developing stage [3-4]. Here, by using a semiclassical multiparticle Monte Carlo (MC) approach, we simulate spin transport in lightly doped n-type Si samples and calculate the spin lifetimes of conduction electrons. Spin flipping is taken into account through the Elliot-Yafet mechanism, which is dominant in group IV materials

    ELECTRON SPIN RELAXATION PROCESS IN SILICON CRYSTALS

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    Recently, electrical injection of spin polarization in n-type and p-type silicon has been experimentally carried out up to room-temperature. Despite of these preliminary but promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on the phonon-induced spin depolarization process in silicon structures, in a wide range of values of temperature, doping concentration and amplitude of external fields, is still in a developing stage. In order to elucidate the electron transport and spin dynamics of conduction electrons in lightly doped n-type Si crystals we have performed semiclassical multiparticle Monte Carlo simulations and numerically calculated the spin lifetimes of drifting electrons heated by the electric field. Spin flipping is taken into account through the Elliot-Yafet mechanism, which is dominant in group IV materials. We discuss the influence of different intravalley and intervalley phonon interactions in the spin relaxation process during the spin transport. Our findings are in good agreement with those obtained by using different theoretical approaches and with the most recent experimental results obtained in spin transport devices. Moreover, our Monte Carlo predictions, in ranges of temperature and field amplitude yet unexplored, can be used as a guide for future experimental studies oriented towards a more effective optimization of room-temperature silicon-based spintronic devices

    Dating Pleistocene deltaic deposits using in-situ 26Al and 10Be cosmogenic nuclides

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    The present study aims at testing the possibility of using the in-situ cosmogenic burial dating technique on deltaic deposits. The sequence analyzed is exposed along the Ligurian coast (north-west Italy) and is made of proximal marine and continental deposits previously considered Pliocene or Plio-Quaternary in age. In the study area two allostratigraphic units were recognized. The lower unit represents the evolution of a small coarse-grained delta developed in a fjord or embayment environment. The coarsening/shallowing upward trend observed within the sections, from bottom to top, suggests that the delta prograded rapidly in the landward portion of the canyon placed opposite to the paleo-river outlet. Within the deltaic sequence the transgressive and highstand system tracts were recognized. The unit 2 is composed by several alluvial fan systems deposited in small incised valleys developed within the previously, uplifted deltaic deposits and successively incised by a braided river system. In-situ produced cosmogenic nuclides were used in order to date the age of the deposition of the deltaic deposits. Results suggest that the studied deltaic sediments belonging to the unit 1 were deposited between 1,300,000 and 200,000 year ago thus during the Lower to Middle Pleistocene, whereas the unit 2 was deposited during the Middle Pleistocene as a consequence of a tectonically driven uplift phase. Furthermore samples collected within the prograding part of the delta show the higher denudation rates. The obtained results demonstrate that burial ages and related erosion rates inferred from cosmogenic nuclides concentrations can be considered as a very useful tool to reconstruct the sea level changes over the past 1 million year

    Diario privato-politico-militare dell' ammiraglio C. di Persano.

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    At head of title: Campagna navale degli anni 1860 e 1861.Mode of access: Internet
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