196,103 research outputs found
Monte Carlo simulation of implant free InGaAs MOSFET
No full textThe performance potential of n-type implant free In0.25Ga0.75As MOSFETs with high-κ dielectric is investigated using ensemble Monte Carlo device simulations. The implant free MOSFET concept takes advantage of the high mobility in III-V materials to allow operation at very high speed and low power. A 100 nm gate length implant free In0.25Ga0.75As MOSFET with a layer structure derived from heterojunction transistors may deliver a drive current of 1800 A/m and transconductance up to 1342 mS/mm. This implant free transistor is then scaled in the both lateral and vertical dimensions to gate lengths of 70 and 50 nm. The scaled devices exhibit continuous improvement in the drive current up to 2600 A/m and 3259 A/m and transconductance of 2076 mS/mm and 3192 mS/mm, respectively. This demonstrates the excellent scaling potential of the implant free MOSFET concept
Morphological modifications of Ag/Cu(111) probed by photoemission spectroscopy of quantum well states and the Shockley surface state
No full textMorphological modifications of Ag/Cu(111) probed by photoemission spectroscopy of quantum well states and the Shockley surface state
No full textSpace charge effects in photoemission with a low repetition, high intensity femtosecond laser source
No full textSub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs
No full textThe performance of 300nm, 500nm and 1μm metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-κ (κ=20) dielectric stack grown upon a δ-doped AlGaAs/InGaAs/AlGaAs/GaAs heterostructure. Enhancement mode operation is maintained across the three reported gate lengths with a reduction in threshold voltage from 0.26 V to 0.08 V as the gate dimension is reduced from 1 μm to 300 nm. An increase in transconductance is also observed with reduced gate dimension. Maximum drain current of 420 μA/μm and extrinsic transconductance of 400 µS/µm are obtained from these devices. Gate leakage current of less than 100pA and subthreshold slope of 90 mV/decade were obtained for all gate lengths. These are believed to be the highest performance submicron enhancement mode III-V MOSFETs reported to date
1 μm gate length, In<sub>0.75</sub>Ga<sub>0.25</sub>As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm
No full textThe first demonstration of implant-free, flatband-mode In<sub>0.75</sub>Ga<sub>0.25</sub>As
channel n-MOSFETs is reported. These 1 μm gate length
MOSFETs, fabricated on a structure with average mobility of
7720 cm<sup>2</sup>/Vs and sheet carrier concentration of 3.3×10<sup>12</sup> cm<sup>-22</sup>,
utilise a Pt gate, a high-k dielectric (k≈20), and a δ-doped
InAlAs/InGaAs/InAlAs heterostructure. The devices have a typical
maximum drive current (I<sub>d,sat</sub>) of 933 μA/μm, extrinsic transconductance
(g<sub>m</sub>) of 737 μS/μm, gate leakage (I<sub>g</sub>) of 40 pA, and on-resistance
(R<sub>on</sub>) of 555 Ωμm. The g<sub>m</sub> and R<sub>on</sub> figures of merit are the
best reported to date for any III-V MOSFET
Dr. Duane M. Jackson, Morehouse College, July 2011
No full textThis video is a conversation with Dr. Duane M. Jackson. Dr. Jackson talks about his paper, "Recall and the Serial Position Effect: The Role of Primacy and Recency on Accounting Students' Performance." Jackie Daniel, AUC Woodruff Library, is the interviewer
"Reflections on the subject of Emigration from Europe with a view to Settlement in the United States" By M. Carey.
No full text"Reflections on the subject of Emigration from Europe with a view to Settlement in the United States: containing bried sketches of the moral and political character of those states.
By M. Carey, member of the American philosophical, and of the American Antiquarian Society, and author of The Olive Branch, Cindiciae Hibernicae, essays on banking, on political economy, and on internal improvement.
To which are now added the English editor's comments on the subject; together with Important Advice to Emigrants, and Cautions Against Impositions Practiced in the Outports
Dispelling the Myths Behind First-author Citation Counts
No full textWe conducted a full-scale evaluative citation analysis study of scholars in the XML research field to explore just how different from each other author rankings resulting from different citation counting methods actually are, and to demonstrate the capability of emerging data and tools on the Web in supporting more realistic citation counting methods. Our results contest some common arguments for the continued
use of first-author citation counts in the evaluation of scholars, such as high correlations between author rankings by first-author citation counts and other citation
counting methods, and high costs of using more realistic citation counting methods that are not well-supported by the ISI databases. It is argued that increasingly available digital full text research papers make it possible for citation analysis studies to go beyond what the ISI databases have directly supported and to employ more
sophisticated methods
Dr. Glendon Swarthout
No full textHosted by Roger M. Busfield, MSU Assistant Professor of Speech and Theater, Meet the Author is designed to introduce a general audience to a contemporary author and their work through in-depth interviews. This episode features a conversation between Dr. Glendon Swarthout, prolific author and English professor at MSU, and assistant professors Sam S. Baskett and Theodore B. Strandness
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