1,721,023 research outputs found
Carrier masses and band-gap temperature sensitivity in Ga(AsBi) alloys
No full textThe effects of external perturbations-such as temperature, photo-excited carrier density, and magnetic field-on the electronic properties of Ga(AsBi) alloys are investigated in a large range of Bi-concentration (x up to similar to 11%). These studies allow us to disclose the existence of Bi-induced localized states that largely contribute to the recombination spectra up to relatively-high temperature (T similar to 150 K). The sensitivity of the band-gap energy to temperature variation is found to diminish strongly with Bi-concentration and to result in a reduction of about a factor of two at the highest concentrations. Magneto-photoluminescence studies have also revealed the role exerted by the Bi-induced levels on the host band states and have disclosed an unexpectedly strong carrier-carrier scattering, which hampers the observation of Landau-level quantization at low magnetic fields. An unusual compositional dependence of the exciton reduced mass, as well as an unexpected increase of the electron effective mass at relatively-low Bi-concentration (x < 6%), are reported and related to the presence of Bi-induced states
Gallium clustering and structural effects of hydrogenation in InGaN/GaN nanostructures
No full textWe addressed the issue of atomic ordering in a series of In-rich InxGa1−xN epilayers grown on a GaN/AlN/sapphire(0001) epitaxial template by quantitatively measuring the Ga-cation coordination in the second atomic shell of Ga. We used Diffraction Anomalous Fine Structure Spectroscopy (DAFS) at the Ga K-edge to select the signal coming from the Ga atoms in the epilayer and eliminate any contribution from the buffer layer. DAFS measurements were also performed on hydrogenated epilayers in order to investigate the possible formation of Ga-H complexes. We find that deviation from cation random distribution in the form of Ga clustering is present in both untreated and hydrogenated samples and that in the latter ones the second atomic shell around Ga is modified, suggesting an additional perturbation of the cation sublattice related to hydrogen. However, comparing the present results with In K-edge x-ray absorption spectra previously reported, we conclude that the formation of Ga-H complexes vs. In-H ones is unlikely. Cation clustering has to be anyway taken into account as a possible channel playing in the determination of the optical bandgap of these technology-oriented semiconductors
Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring
No full textThe variation of the band gap energy of III-N-V semiconductors induced by hydrogen incorporation is the most striking effect that H produces in these materials. A special emphasis is given here to the combination of N-activity passivation by hydrogen with H diffusion kinetics in dilute nitrides. Secondary ion mass spectrometry shows an extremely steep (smaller than 5 nm/decade) forefront of the H diffusion profile in Ga(AsN) under appropriate hydrogenation conditions. This discovery prompts the opportunity for an in-plane nanostructuring of hydrogen incorporation and, hence, for a modulation of the material band gap energy at the nanoscale. The properties of quantum dots fabricated by a lithographically defined hydrogenation are presented, showing the zero-dimensional character of these novel nanostructures. Applicative prospects of this nanofabrication method are finally outlined. © 2014 AIP Publishing LLC
Photonic Jets and Single‐Photon Emitters
Get PDFPhotonic jets (PJs) obtained by illuminating a dielectric microsphere have recently shown to provide an efficient and cost-effective means of laser-writing and localizing single-photon emitters with sub-diffraction precision. The fabrication technique relies on the photoinduced formation of GaAsN quantum dots (QDs) that are self-aligned to the microsphere, which in turn enhances the collection efficiency of their emission. Similarly, the angular magnification introduced by a microsphere placed on top of two close emitters allows to detect and resolve their separation below the diffraction limit by analyzing their angular emission pattern in momentum space. Along with a brief review of the two methods, a systematic numerical study on the formation and properties of PJs to streamline the optimization of the fabrication process is presented
Strain engineering of the transition metal dichalcogenide chalcogen-alloy WSSe
Get PDFAlloying has been a powerful and practical strategy to widen the palette of physical properties available to semiconductor materials. Thanks to recent advances in the synthesis of van der Waals semiconductors, this strategy can be extended to monolayers (MLs) of transition metal dichalcogenides (TMDs). Due to their extraordinary flexibility and robustness, strain is another powerful means to engineer the electronic properties of two-dimensional (2D) TMDs. In this article, we combine these two approaches in an exemplary metal dichalcogenide chalcogen-alloy, WSSe. Highly strained WSSe MLs are obtained through the formation of micro-domes filled with high-pressure hydrogen. Such structures are achieved by hydrogen-ion irradiation of the bulk material, a technique successfully employed in TMDs and h-BN. Atomic force microscopy studies of the WSSe ML domes show that the dome morphology can be reproduced in terms of the average of the elastic parameters and adhesion energy of the end compounds WSe2 and WS 2. Micro-photoluminescence measurements of the WSSe domes demonstrate that the exceedingly high strains ( epsilon similar to 4 %) achieved in the domes trigger a direct-to-indirect exciton transition, similarly to WSe2 and WS2. Our findings heighten the prospects of 2D alloys as strain- and composition-engineerable materials for flexible optoelectronics
Photoluminescence: A Tool for Investigating Optical, Electronic, and Structural Properties of Semiconductors
No full textTheoretical basis and typical experimental set-ups of photoluminescence, PL, are briefly described. The investigation by PL of some of the fundamental properties of compound semiconductors and alloys e.g., optical gap, type and density of shallow impurities, effects of structural disorder in alloys and at heterostructure interfaces, carrier effective masses is illustrated. The effects on PL spectra of magnetic fields are discussed, together with the validity limits of perturbation and numerical models for different ratios of magnetic and excitonic energies
Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities
Get PDFWe review an innovative approach for the fabrication of site-controlled quantum emitters (i.e., single-photon emitting quantum dots) based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors (e.g., GaAsN). In such systems, the formation of stable N-H complexes removes the effects that nitrogen has on the alloy properties, thus enabling the in-plane engineering of the band bap energy of the system. Both a lithographic approach and/or a near-field optical illumination—coupled to the ultra-sharp diffusion profile of H in dilute nitrides—allow us to control the hydrogen implantation and/or removal on a nanometer scale. This, eventually, makes it possible to fabricate site-controlled quantum dots that are able to emit single photons on demand. The strategy for a deterministic spatial and spectral coupling of such quantum emitters with photonic crystal cavities is also presented
Going Beyond Counting First Authors in Author Co-citation Analysis
Get PDFThe present study examines one of the fundamental aspects of author co-citation analysis (ACA) - the way co-citation
counts are defined. Co-citation counting provides the data on which all subsequent statistical analyses and mappings
are based, and we compare ACA results based on two different types of co-citation counting - the traditional type that
only counts the first one among a cited work's authors on the one hand and a non-traditional type that takes into
account the first 5 authors of a cited work on the other hand. Results indicate that the picture produced through this non-traditional author co-citation counting contains more coherent author groups and is therefore considerably clearer. However, this picture represents fewer specialties in the research field being studied than that produced through the traditional first-author co-citation counting when the same number of top-ranked authors is selected and analyzed. Reasons for these effects are discussed
Variations on the Author
Get PDF“Variations on the Author” discusses two of Eduardo Coutinho’s recent films (Um Dia na Vida, from 2010, and Últimas Conversas, posthumously released in 2015) and their contribution to the general question of documentary authorship. The director’s filmography is characterized by a consistent yet self-effacing form of authorial self-inscription: Coutinho often features as an interviewer that rather than express opinions propels discourses; an interviewer that is good at listening. This mode of self-inscription characterizes him as an author who is not expressive but who is nonetheless markedly present on the screen. In Um Dia na Vida, however, Coutinho is completely absent form the image, while Últimas Conversas, on the contrary, includes a confessional prologue that moves the director from the margins to the center of his films. This article examines the ways in which these works stand out in the filmography of a director who offers new insights into the notion of cinematic authorship
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