1,721,065 research outputs found
Management of the output electrical power in thermoelectric generators
Full text linkThermoelectric Generators (TEGs) are devices for direct conversion of heat into electrical power and bear a great potential for applications in energy scavenging and green energy harvesting. Given a heat source, the conversion efficiency depends on the available temperature difference, and must be maximized for optimal operation of the TEG. In this frame, the choice of materials with high thermoelectric properties should be accompanied by the identification of criteria for an optimal exploitation of the electrical power output. In this work, we briefly review the main properties of TEGs, focusing on the electrical power output and the thermal-to-electrical conversion efficiency. Besides, we discuss principles of operation of TEGs enabling the optimization of the electrical power output, based on the suitable choice of the electrical load. In particular, we comparatively present and discuss the conditions for matching the electrical load—yielding to maximum power transfer—and those for maximizing the conversion efficiency. We compare the two conditions applying them to the exploitation of a heat reservoir for energy storage and to the recovery of heat from a heat exchanger. We conclude that the difference between the two conditions is not significant enough to justify the complexity required by the implementation of the maximum efficiency. In addition, we consider the effect of the thermal contact resistance on the electrical power output. Using a simple thermal-electrical model, we demonstrate that the equivalent electrical resistance measured between the terminals of the TEG depends on the thermal exchange. Hence, for maximum power transfer, the electrical load of the TEG should not match its parasitic resistance, but the equivalent electrical resistance in each specific operating conditions, which determine the thermal fluxes. The model can be applied for the development of efficient alternative algorithms for maximum power point tracking
Seebeck coefficient of silicon nanowire forests doped by thermal diffusion
No full textThermoelectric generators made by large arrays of nanowires perpendicular to a silicon substrate, that is, so-called silicon nanowire forests are fabricated on large areas by an inexpensive metal-assisted etching technique. After fabrication, a thermal diffusion process is used for doping the nanowire forest with phosphorous. A suitable experimental technique has been developed for the measurement of the Seebeck coefficient under static conditions, and results are reported for different doping parameters. These results are in good agreement with numerical simulations of the doping process applied to silicon nanowires. These devices, based on doped nanowire forests, offer a possible route for the exploitation of the high power factor of silicon, which, combined with the very low thermal conductivity of nanostructures, will yield a high efficiency of the conversion of thermal to electrical energy
Silicon nanowires: A breakthrough for thermoelectric applications
No full textThe potentialities of silicon as a starting material for electronic devices are well known and largely exploited, driving the worldwide spreading of integrated circuits. When nanostructured, silicon is also an excellent material for thermoelectric applications, and hence it could give a significant contribution in the fundamental fields of energy micro-harvesting (scavenging) and macro-harvesting. On the basis of recently published experimental works, we show that the power factor of silicon is very high in a large temperature range (from room temperature up to 900 K). Combining the high power factor with the reduced thermal conductivity of monocrystalline silicon nanowires and nanostructures, we show that the foreseen figure of merit ZT could be very high, reaching values well above 1 at temperatures around 900 K. We report the best parameters to optimize the thermoelectric properties of silicon nanostructures, in terms of doping concentration and nanowire diameter. At the end, we report some technological processes and solutions for the fabrication of macroscopic thermoelectric devices, based on large numbers of silicon nanowire/nanostructures, showing some fabricated demonstrators
Thermal conductivity of silicon nanowire forests
Full text linkA large amount of parallel silicon nanowires, placed perpendicularly to a silicon substrate (silicon nanowire forests), have been contacted and assembled in order to fabricate legs of a thermoelectric generator. This paper reports the measurement of the main parameter for thermoelectric applications, which is the thermal conductivity. The reported value, which confirms the strong reduction of the thermal conductivity in nanostructures, is measured on a large amount (>107) of parallel nanowires with a diameter variable in the range 60-120 nm, and takes into account eventual non-uniformities which are unavoidable on surfaces of several mm2. As silicon nanowire forests are very thin, it has been necessary to develop a suitable measurement apparatus. The fabrication of devices based on silicon nanowire forests, the apparatus and the measurement procedure, as well as the the results, are illustrated and discussed
Nanostructured potential well/barrier engineering for realizing unprecedentedly large thermoelectric power factors
Full text linkThis work describes, through the semi-classical Boltzmann transport theory and simulation, a novel nanostructured material design that can lead to unprecedentedly high thermoelectric power factors, with improvements of more than an order of magnitude compared to optimal bulk material power factors. The design is based on a specific grain/grain-boundary (potential well/barrier) engineering such that: i) carrier energy filtering is achieved using potential barriers, combined with ii) higher than usual doping operating conditions such that high carrier velocities and mean-free-paths are utilized, iii) minimal carrier energy relaxation is achieved after passing over the barriers to propagate the high Seebeck coefficient of the barriers into the potential wells, and, importantly, iv) an intermediate dopant-free (depleted) region is formed. Thus, the design consists of a ‘three-region geometry’, in which the high doping resides in the center/core of the potential well, with a dopant-depleted region separating the doped region from the potential barriers. It is shown that the filtering barriers are optimal when they mitigate the reduction in conductivity they introduce, and this can be done primarily when they are ‘clean’ from dopants during the process of filtering. The potential wells, on the other hand, are optimal when they mitigate the reduced Seebeck coefficient they introduce by: i) not allowing carrier energy relaxation, and ii) mitigating the reduction in mobility that the high concentration of dopant impurities causes. It is shown that dopant segregation, with ‘clean’ dopant-depletion regions around the potential barriers, serves this key purpose of improved mobility toward the phonon-limited mobility levels in the wells. Using quantum transport simulations based on the non-equilibrium Green's function method as well as semi-classical Monte Carlo simulations, we also verify the important ingredients and validate this ‘clean-filtering’ design
High Power Thermoelectric Generator Based on Vertical Silicon Nanowires
Full text linkThermoelectric generators, which convert heat directly into electrical power, have great potentialities in the energy harvesting field. The exploitation of these potentialities is limited by the materials currently used, characterized by good thermoelectric properties, but also by several drawbacks. This work presents a silicon-based thermoelectric generator, made of a large collection of heavily p-doped silicon nanostructures. This macroscopic device (area of several mm2) collects together the good thermoelectric features of silicon, in terms of high power factor, and a very reduced thermal conductivity, which resulted in being exceptionally low (1.8 W/(m K), close to the amorphous limit). The generated electrical power density is remarkably high for a Si-based thermoelectric generator, and it is suitable for scavenging applications which can exploit small temperature differences. A full characterization of the device (Seebeck coefficient, thermal conductivity, maximum power output) is reported and discussed
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